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Jia F, Qi Y, Hu S, Hu T, Li M, Zhao G, Zhang J, Stroppa A, Ren W. Structural properties and strain engineering of a BeB2 monolayer from first-principles. RSC Adv 2017. [DOI: 10.1039/c7ra07137j] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Abstract
Using crystal structure prediction and first-principles calculations, we investigated new phases of BeB2 monolayers and discussed their structural, electronic and strain effect properties of such boron-based 2D materials.
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Affiliation(s)
- Fanhao Jia
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Yuting Qi
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Shunbo Hu
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Tao Hu
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Musen Li
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Guodong Zhao
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Jihua Zhang
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Alessandro Stroppa
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
| | - Wei Ren
- Department of Physics
- International Center of Quantum and Molecular Structures
- Shanghai University
- Shanghai 200444
- China
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Li Z, Zhang B, Wang J, Liu J, Liu X, Yang S, Zhu Q, Wang Z. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy. Nanoscale Res Lett 2011; 6:193. [PMID: 21711731 PMCID: PMC3211249 DOI: 10.1186/1556-276x-6-193] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/26/2010] [Accepted: 03/02/2011] [Indexed: 05/31/2023]
Abstract
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.
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Affiliation(s)
- Zhiwei Li
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Biao Zhang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Jun Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Jianming Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Xianglin Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Shaoyan Yang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Qinsheng Zhu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Zhanguo Wang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
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King SW, French M, Bielefeld J, Jaehnig M, Kuhn M, French B. X-ray Photoelectron Spectroscopy Investigation of the Schottky Barrier at a-BN:H∕Cu Interfaces. ACTA ACUST UNITED AC 2011; 14:H478. [DOI: 10.1149/2.015112esl] [Citation(s) in RCA: 22] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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