Optical readout uncooled infrared imaging detector using knife-edge filter operation

Bi-material terahertz sensors using metamaterial structures

In this paper we report on the design, fabrication and characterization of terahertz (THz) bi-material sensors with metamaterial absorbers. MEMS fabrication-friendly SiOx and Al are used to maximize the bimetallic effect and metamaterial absorption at 3.8 THz, the frequency of a quantum cascade laser illumination source. Sensors with different configurations were fabricated and the measured absorption is near 100% and responsivity is around 1.2 deg/μW, which agree well with finite element simulations. The results indicate the potential of using these detectors to fabricate focal plane arrays for real time THz imaging.

Microelectromechanical systems bimaterial terahertz sensor with integrated metamaterial absorber

This Letter describes the fabrication of a microelectromechanical systems (MEMS) bimaterial terahertz (THz) sensor operating at 3.8 THz. The incident THz radiation is absorbed by a metamaterial structure integrated with the bimaterial. The absorber was designed with a resonant frequency matching the quantum cascade laser illumination source while simultaneously providing structural support, desired thermomechanical properties and optical readout access. Measurement showed that the fabricated absorber has nearly 90% absorption at 3.8 THz. A responsivity of 0.1°/μW and a time constant of 14 ms were observed. The use of metamaterial absorbers allows for tuning the sensor response to the desired frequency to achieve high sensitivity for potential THz imaging applications.

Microwave and terahertz wave sensing with metamaterials

We have designed, fabricated, and characterized metamaterial enhanced bimaterial cantilever pixels for far-infrared detection. Local heating due to absorption from split ring resonators (SRRs) incorporated directly onto the cantilever pixels leads to mechanical deflection which is readily detected with visible light. Highly responsive pixels have been fabricated for detection at 95 GHz and 693 GHz, demonstrating the frequency agility of our technique. We have obtained single pixel responsivities as high as 16,500 V/W and noise equivalent powers of 10(-8) W/Hz(1/2) with these first-generation devices.