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Wei X, Zhang M, Zhang X, Lin Y, Jiang Z, Du A. Efficient Modulation of Schottky to Ohmic Contact in MoSi 2N 4/M 3C 2 (M = Zn, Cd, Hg) van der Waals Heterostructures. J Phys Chem Lett 2024; 15:3871-3883. [PMID: 38560820 DOI: 10.1021/acs.jpclett.4c00501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
A strong Fermi level pinning (FLP) effect can induce a large Schottky barrier in metal/semiconductor contacts; reducing the Schottky barrier height (SBH) to form an Ohmic contact (OhC) is a critical problem in designing high-performance electronic devices. Herein, we report the interfacial electronic features and efficient modulation of the Schottky contact (ShC) to OhC for MoSi2N4/M3C2 (M = Zn, Cd, Hg) van der Waals heterostructures (vdWHs). We find that the MoSi2N4/M3C2 vdWHs can form a p-type ShC with small SBH with the calculated pinning factor S ≈ 0.8 for MoSi2N4/M3C2 contacts. These results indicate that the FLP effect can be effectively suppressed in MoSi2N4 contact with M3C2. Moreover, the interfacial properties and SBH of MoSi2N4/Zn3C2 vdWHs can be effectively modulated by a perpendicular electric field and biaxial strain. In particular, an efficient OhC can be achieved in MoSi2N4/Zn3C2 vdWHs by applying a positive electric field of 0.5 V/Å and strain of ±8%.
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Affiliation(s)
- Xinru Wei
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Minjie Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Xiaodong Zhang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Yanming Lin
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Zhenyi Jiang
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710127, P. R. China
| | - Aijun Du
- School of Chemistry and Physics, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4000, Australia
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Luo W, Wei X, Wang J, Zhang Y, Chen H, Yang Y, Liu J, Tian Y, Duan L. Tunable electronic and optical properties of BAs/WTe 2heterostructure for theoretical photoelectric device design. J Phys Condens Matter 2024; 36:255501. [PMID: 38478994 DOI: 10.1088/1361-648x/ad3371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Accepted: 03/13/2024] [Indexed: 03/28/2024]
Abstract
The geometric structure of the BAs/WTe2heterojunction was scrutinized by employingab initiocalculations grounded on density functional theory. Multiple configurations are constructed to determine the equilibrium state of the heterojunction with optimal stability. The results show that the H1-type heterojunction with interlayer distance of 3.92 Å exhibits exceptional stability and showcases a conventional Type-II band alignment, accompanied by a direct band gap measuring 0.33 eV. By applying external electric field and introducing strain, one can efficaciously modulate both the band gap and the quantity of charge transfer in the heterojunction, accompanied by the transition of band alignment from Type-II to Type-I, which makes it expected to achieve broader applications in light-emitting diodes, laser detectors and other fields. Ultimately, the heterojunction undergoes a transformation from a semiconducting to a metallic state. Furthermore, the outstanding optical characteristics inherent to each of the two monolayers are preserved, the BAs/WTe2heterojunction also serves to enhance the absorption coefficient and spectral range of the material, particularly within the ultraviolet spectrum. It merits emphasis that the optical properties of the BAs/WTe2heterojunction are capable of modification through the imposition of external electric fields and mechanical strains, which will expand its applicability and potential for future progression within the domains of nanodevices and optoelectronic apparatus.
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Affiliation(s)
- Wentao Luo
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Xing Wei
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jiaxin Wang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yan Zhang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Huaxin Chen
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Yun Yang
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
| | - Jian Liu
- School of Physics, Shandong University, Jinan 250100, People's Republic of China
| | - Ye Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Li Duan
- School of Materials Science and Engineering, Chang'an University, Xi'an 710064, People's Republic of China
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Nguyen ST, Nguyen CQ, Hieu NN, Phuc HV, Nguyen CV. Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc 2CF 2 Heterostructures toward Next-Generation Optoelectronic Devices. Langmuir 2023; 39:17251-17260. [PMID: 37972320 DOI: 10.1021/acs.langmuir.3c02329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.
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Affiliation(s)
- Son-Tung Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam
| | - Cuong Q Nguyen
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Huynh V Phuc
- Division of Theoretical Physics, Dong Thap University, Cao Lanh 870000, Vietnam
| | - Chuong V Nguyen
- Department of Materials Science and Engineering, Le Quy Don Technical University, Hanoi 100000, Vietnam
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Barhoumi M, Liu J, Lefkidis G, Hübner W. Laser-induced ultrafast spin-transfer processes in non-linear zigzag carbon chain systems. Phys Chem Chem Phys 2023; 25:24563-24580. [PMID: 37661835 DOI: 10.1039/d3cp02483k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
We combine the high-level quantum chemistry theory CCSD and EOM-CCSD together with local and global Λ processes to investigate the details of the laser-induced ultrafast spin manipulation scenarios in non-linear zigzag carbon chain systems Ni2@C32H32 and Ni2@C36H36. The spin density distribution, which is calculated on each many-body state using a Mulliken population analysis, fulfills the requirements to accomplish the spin dynamics processes. Various spin-flip and spin-transfer scenarios are accomplished. All the spin-dynamics processes can be achieved within subpicosecond times. Under the influence of a magnetic field, we find that the spin-transfer scenarios are preserved, while the local spin-flip scenario on a Ni atom can be significantly inhibited depending on the strength of the magnetic field. The impact of the propagation direction of the laser pulse on the spin dynamics processes by varying their polar and azimuthal angles in spherical coordinates is investigated. Additionally, we find that double laser pulses successfully induce the spin-transfer processes. Our outcomes underline the significant potential of carbon chain systems as building blocks for developing future all-optical integrated logic processing units.
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Affiliation(s)
- Mohamed Barhoumi
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany.
| | - Jing Liu
- Institute of Theoretical Chemistry, Ulm University, 89081 Ulm, Germany
| | - Georgios Lefkidis
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany.
| | - Wolfgang Hübner
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany.
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Barhoumi M, Liu J, Lefkidis G, Hübner W. Ultrafast control of laser-induced spin-dynamics scenarios on two-dimensional Ni3@C63H54 magnetic system. J Chem Phys 2023; 159:084304. [PMID: 37638625 DOI: 10.1063/5.0158160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Accepted: 08/07/2023] [Indexed: 08/29/2023] Open
Abstract
The concept of building logically functional networks employing spintronics or magnetic heterostructures is becoming more and more popular today. Incorporating logical segments into a circuit needs physical bonds between the magnetic molecules or clusters involved. In this framework, we systematically study ultrafast laser-induced spin-manipulation scenarios on a closed system of three carbon chains to which three Ni atoms are attached. After the inclusion of spin-orbit coupling and an external magnetic field, different ultrafast spin dynamics scenarios involving spin-flip and long-distance spin-transfer processes are achieved by various appropriately well-tailored time-resolved laser pulses within subpicosecond timescales. We additionally study the various effects of an external magnetic field on spin-flip and spin-transfer processes. Moreover, we obtain spin-dynamics processes induced by a double laser pulse, rather than a single one. We suggest enhancing the spatial addressability of spin-flip and spin-transfer processes. The findings presented in this article will improve our knowledge of the magnetic properties of carbon-based magnetic molecular structures. They also support the relevant experimental realization of spin dynamics and their potential applications in future molecular spintronics devices.
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Affiliation(s)
- Mohamed Barhoumi
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany
| | - Jing Liu
- Institute of Theoretical Chemistry, Ulm University, 89081 Ulm, Germany
| | - Georgios Lefkidis
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany
| | - Wolfgang Hübner
- Department of Physics, Rheinland-Pfälzische Technische Universität Kaiserslautern (RPTU) Kaiserslautern-Landau, P.O. Box 3049, 67653 Kaiserslautern, Germany
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Pawar S, Duadi H, Fixler D. Recent Advances in the Spintronic Application of Carbon-Based Nanomaterials. Nanomaterials (Basel) 2023; 13:598. [PMID: 36770559 PMCID: PMC9919822 DOI: 10.3390/nano13030598] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 01/29/2023] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
The term "carbon-based spintronics" mostly refers to the spin applications in carbon materials such as graphene, fullerene, carbon nitride, and carbon nanotubes. Carbon-based spintronics and their devices have undergone extraordinary development recently. The causes of spin relaxation and the characteristics of spin transport in carbon materials, namely for graphene and carbon nanotubes, have been the subject of several theoretical and experimental studies. This article gives a summary of the present state of research and technological advancements for spintronic applications in carbon-based materials. We discuss the benefits and challenges of several spin-enabled, carbon-based applications. The advantages include the fact that they are significantly less volatile than charge-based electronics. The challenge is in being able to scale up to mass production.
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Affiliation(s)
- Shweta Pawar
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
| | - Hamootal Duadi
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
| | - Dror Fixler
- Faculty of Engineering and the Institute of Nanotechnology and Advanced Materials, Bar Ilan University, Ramat Gan 5290002, Israel
- Bar-Ilan Institute of Nanotechnology & Advanced Materials (BINA), Bar Ilan University, Ramat Gan 5290002, Israel
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Guo H, Lang X, Tian X, Jiang W, Wang G. Tunable Schottky barrier in Janus- XGa 2Y/Graphene ( X/ Y = S, Se, Te; X≠ Y) van der Waals heterostructures. Nanotechnology 2022; 33:425704. [PMID: 35817003 DOI: 10.1088/1361-6528/ac800d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Accepted: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) Janus materials have attracted significant attention due to their asymmetrical structures and unique electronic properties. In this work, by using the first-principles calculation based on density functional theory, we systematically investigate the electronic properties of 6 types of Janus-XGa2Y/Graphene van der Waals heterostructures (vdWHs). The results show that the Janus-XGa2Y/Graphene vdWHs are connected by weak interlayer vdW forces and can form n-type Schottky contact, p-type Schottky contact or Ohmic contact when the spin-orbit coupling (SOC) is not considered. However, when considering SOC, only the SeGa2S/G and G/SeGa2S vdWHs show n-type Schottky contact, and other vdWHs show Ohmic contacts. In addition, the Schottky barriers and contact types of SeGa2S/Graphene and Graphene/SeGa2S vdWHs can be effectively modulated by interlayer distance and biaxial strain. They can be transformed from intrinsic n-type Schottky contact to p-type Schottky contact when the interlayer distances are smaller than 2.65 Å and 2.90 Å, respectively. They can also be transformed to Ohmic contact by applying external biaxial strain. Our work can provide useful guidelines for designing Schottky nanodiodes, field effect transistors or other low-resistance nanodevices based on the 2D vdWHs.
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Affiliation(s)
- Hao Guo
- School of Urban Construction, Hebei Normal University of Science & Technology, Qinhuangdao 066004, People's Republic of China
- Material Simulation and Computing Laboratory, Department of Physics, Hebei Normal University of Science & Technology, Qinghuangdao 066004, People's Republic of China
| | - Xiufeng Lang
- Material Simulation and Computing Laboratory, Department of Physics, Hebei Normal University of Science & Technology, Qinghuangdao 066004, People's Republic of China
| | - Xiaobao Tian
- Department of Mechanics and Engineering, Sichuan University, Chengdu 610065, People's Republic of China
| | - Wentao Jiang
- Department of Mechanics and Engineering, Sichuan University, Chengdu 610065, People's Republic of China
| | - Guangzhao Wang
- Key Laboratory of Micro Nano Optoelectronic Devices and Intelligent Perception Systems, Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, School of Electronic Information Engineering, Yangtze Normal University, Chongqing 408100, People's Republic of China
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Hu X, Liu W, Yang J, Zhang S, Ye Y. First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:25136-25142. [PMID: 34729574 DOI: 10.1039/d1cp03850h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electrical contacts at the van der Waals (vdW) interface between two-dimensional (2D) semiconductors and metal electrodes could dramatically affect the device performance. Herein, we construct a series of graphene (Gr)/XC (X = P, As, Sb, and Bi) vdW heterostructures, in which XC monolayers have aroused considerable attention recently as an emerging class of 2D semiconductors. The electronic structures and contact properties of Gr/XC vdW heterostructures are investigated systematically using first-principles calculations. The band structures indicate that both Gr/PC and Gr/AsC heterostructures form n-type Schottky contacts with Schottky barrier heights (SBHs) of 0.01 eV and 0.43 eV, respectively, while both Gr/SbC and Gr/BiC heterostructures preferably form Ohmic contacts. The different X atoms result in different work functions, electron flows, charge distributions and orientations of the dipole moment in Gr/XC heterostructures. Moreover, the tunneling probabilities increase with the increasing atom radius of X from P to Bi, indicating the most improved current and smaller contact resistance at the interfaces of Gr/BiC compared to Gr/PC, Gr/AsC and Gr/SbC heterostructures. Our work could provide meaningful information for designing high-performance nanoelectronic devices based on Gr/XC heterostructures.
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Affiliation(s)
- Xuemin Hu
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.
| | - Wenqiang Liu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Jialin Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Shengli Zhang
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China. .,National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Yuanfeng Ye
- School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, China.
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Liu X, Zhang Z, Lv B, Ding Z, Luo Z. The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles. Nanomaterials (Basel) 2020; 10:E1794. [PMID: 32916951 PMCID: PMC7558498 DOI: 10.3390/nano10091794] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 09/06/2020] [Accepted: 09/09/2020] [Indexed: 01/02/2023]
Abstract
Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, we investigated the electronic structure and interfacial characteristics of the graphene/AlN interface based on density functional theory. The results show that the intrinsic electronic properties of graphene changed slightly after contact. In contrast, the valence band maximum of AlN changed significantly due to the hybridization of Cp and Np orbital electrons. The Bader charge analysis showed that the electrons would transfer from AlN to graphene, implying that graphene would induce acceptor states. Additionally, the Schottky contact nature can be effectively tuned by the external electric field, and it will be tuned from the p-type into n-type once the electric field is larger than about 0.5 V/Å. Furthermore, the optical absorption of graphene/AlN is enhanced after contact. Our findings imply that the SBH is controllable, which is highly desirable in nano-electronic devices.
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Affiliation(s)
- Xuefei Liu
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China; (X.L.); (B.L.)
| | - Zhaocai Zhang
- Beijing Institute of Space Science and Technology Information, Beijing 100094, China;
| | - Bing Lv
- Key Laboratory of Low Dimensional Condensed Matter Physics of Higher Educational Institution of Guizhou Province, Guizhou Normal University, Guiyang 550025, China; (X.L.); (B.L.)
| | - Zhao Ding
- College of Big data and Information Engineering, Guizhou University, Guiyang 550025, China;
| | - Zijiang Luo
- College of Information, Guizhou University Finance and Economics, Guiyang 550025, China
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