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Chen K, Wu Z, Jin Y, Hu J, Du J, Zhang M. Love wave propagation in piezoelectric structures bonded with conductive polymer films. Ultrasonics 2022; 118:106559. [PMID: 34474356 DOI: 10.1016/j.ultras.2021.106559] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 06/22/2021] [Accepted: 08/20/2021] [Indexed: 06/13/2023]
Abstract
In this study, we investigate analytically Love wave propagation in layered piezoelectric structures, where a thin conductive polymer layer is bonded to an unbounded piezoelectric substrate. The dispersive relation is derived and the effects of viscosity and conductivity on the phase velocity and attenuation of Love wave are analyzed and discussed. The results reveal that the effects of the viscosity and conductivity on the properties of Love wave are obvious. The phase velocity is affected by the viscosity and conductivity slightly, while the attenuation is remarkably changed with the varying frequency of the waves, viscosity and conductivity, respectively. The relationship between attenuation and frequency are not monotone increasing. The analytical solutions results are well-matched with the finite element results. The results in this work is useful for the design of acoustic wave device.
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Affiliation(s)
- Kunpeng Chen
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China
| | - Zhi Wu
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China
| | - Yuan Jin
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China
| | - Jianying Hu
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China
| | - Jianke Du
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China.
| | - Minghua Zhang
- Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, Zhejiang 315211, China.
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Shen J, Fu S, Su R, Xu H, Wang W, Lu Z, Feng Q, Zeng F, Song C, Pan F. Structure with thin SiO x/SiN x bilayer and Al electrodes for high-frequency, large-coupling, and low-cost surface acoustic wave devices. Ultrasonics 2021; 115:106460. [PMID: 34029835 DOI: 10.1016/j.ultras.2021.106460] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 05/01/2021] [Accepted: 05/03/2021] [Indexed: 06/12/2023]
Abstract
With the development of fifth-generation wireless systems, the Internet of Things, and health services, surface acoustic wave (SAW)-based filters and sensors have attracted considerable interest. This study presents a new structure for high-frequency, large-coupling, and low-cost SAW devices that helps implement high-frequency and wideband filters and enhances the sensitivity of sensors. The structure is based on 15°Y-X LiNbO3, thin SiOx/SiNx bilayer overlay, and Al electrodes. Furthermore, a low-cost fabrication process for SAW devices based on this structure was designed. Simulation and experimental results show that the bilayer substantially weakens the leaky nature of shear-horizontal-type SAWs with a phase velocity higher than that of a slow-shear bulk wave in LiNbO3. Thus, the limitation related to the velocity of 4029 m/s was overcome, and the phase velocity reached approximately 4500 m/s, which means an increase of 50% compared with that of conventional Cu/15°Y-X LiNbO3 devices. Consequently, the frequency dramatically increases, and the quality of the SAW response is ensured. Simultaneously, a large electromechanical coupling factor close to 20% can be achieved, which is still suitable for wideband filters and sensors with high energy transduction coefficients. This new structure is expected to become a major candidate for SAW devices in the future.
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Affiliation(s)
- Junyao Shen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Sulei Fu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
| | - Rongxuan Su
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Huiping Xu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Weibiao Wang
- SHOULDER Electronics Limited, Wuxi 214124, Jiangsu, China
| | - Zengtian Lu
- SHOULDER Electronics Limited, Wuxi 214124, Jiangsu, China
| | - Qiong Feng
- SHOULDER Electronics Limited, Wuxi 214124, Jiangsu, China
| | - Fei Zeng
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
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Tanak AS, Muthukumar S, Hashim IA, Prasad S. Rapid electrochemical device for single-drop point-of-use screening of parathyroid hormone. ACTA ACUST UNITED AC 2019. [DOI: 10.2217/bem-2019-0011] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Aim: Novel electrochemical point-of-use biosensing device for rapid assessment of parathyroid hormone (PTH) levels has been developed. Materials & methods: The analytical nanobiosensor was designed by integrating unique high density semiconducting nanostructured arrays on a flexible sensing surface. Surface modification technique was tailored for enhancing the interaction of nanostructure–biological interface to capture the target PTH level. Results & conclusion: We demonstrate a rapid nanobiosensor to detect PTH in human serum, plasma and whole blood with a limit of detection of 1 pg/ml and a clinically relevant dynamic range from 1 to 1000 pg/ml. This is the first demonstration of detecting PTH as a point-of-use device devoid of sample pretreatment suitable in a surgical setting with high specificity to PTH.
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Affiliation(s)
- Ambalika Sanjeev Tanak
- Department of Bioengineering, The University of Texas at Dallas, Richardson, TX 75080, USA
| | | | - Ibrahim A Hashim
- Department of Bioengineering, The University of Texas at Dallas, Richardson, TX 75080, USA
- Department of Pathology, UT Southwestern Medical Center, Dallas, TX 75390, USA
| | - Shalini Prasad
- Department of Bioengineering, The University of Texas at Dallas, Richardson, TX 75080, USA
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Wen C, Niu T, Ma Y, Gao N, Ru F. Study on Fabrication of ZnO Waveguide Layer for Love Wave Humidity Sensor Based on Magnetron Sputtering. Sensors (Basel) 2018; 18:s18103384. [PMID: 30309017 PMCID: PMC6210658 DOI: 10.3390/s18103384] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2018] [Revised: 10/02/2018] [Accepted: 10/08/2018] [Indexed: 11/16/2022]
Abstract
The ZnO waveguide layer for the Love wave humidity sensor was fabricated by radio frequency (RF) magnetron sputtering technique using ZnO as the target material. To investigate the effect of RF magnetron sputtering temperature on the ZnO waveguide layer and Love wave device, a series of Love wave devices with ZnO waveguide layer were fabricated at different sputtering temperatures. The crystal orientation and microstructure of ZnO waveguide was characterized and analyzed, and the response characteristics of the Love wave device were analyzed by network analyzer. Furthermore, a humidity measurement system is designed, and the performance of the Love wave humidity sensor was measured and analyzed. The research results illustrate that the performance of the ZnO waveguide layer is improved when the sputtering temperature changes from 25 °C to 150 °C. However, when the sputtering temperature increases from 150 °C to 200 °C, the performance of the ZnO waveguide layer is degraded. Compared with the other sputtering temperatures, the ZnO waveguide layer fabricated at 150 °C has the best c-axis orientation and the largest average grain size (53.36 nm). The Love wave device has the lowest insertion loss at 150 °C. In addition, when the temperature of the measurement chamber is 25 °C and the relative humidity is in the range of 10% to 80%, the fabricated Love wave humidity sensor with ZnO waveguide layer has good reproducibility and long-term stability. Moreover, the Love wave humidity sensor has high sensitivity of 6.43 kHz/RH and the largest hysteresis error of the sensor is 6%.
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Affiliation(s)
- Changbao Wen
- Institute of Micro-Nanoelectronics, School of Electronics and Control Engineering, Chang'an University, Xi'an 710064, China.
| | - Taotao Niu
- Institute of Micro-Nanoelectronics, School of Electronics and Control Engineering, Chang'an University, Xi'an 710064, China.
| | - Yue Ma
- Institute of Micro-Nanoelectronics, School of Electronics and Control Engineering, Chang'an University, Xi'an 710064, China.
| | - Nan Gao
- Institute of Micro-Nanoelectronics, School of Electronics and Control Engineering, Chang'an University, Xi'an 710064, China.
| | - Feng Ru
- Institute of Micro-Nanoelectronics, School of Electronics and Control Engineering, Chang'an University, Xi'an 710064, China.
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