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Liu L, Pan D, Wen L, Zhuo R, Zhao J. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation. Nanotechnology 2023; 34:225701. [PMID: 36827703 DOI: 10.1088/1361-6528/acbeb2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
InAs nanowires show important potential applications in novel nanoelectronic devices, infrared optoelectronic devices and quantum devices, and all these applications require controllable growth of the InAs nanowires. However, the growth direction of metal-assisted InAs nanowires on Si substrates is often random. Here, we develop a new approach to grow vertically aligned InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag as catalysts. The vertically aligned one-dimensional InAs nanowires are grown on the parasitic two-dimensional InAs film on the Si substrates by using the Ag nanoparticles segregated from Ag-In alloy catalysts. The diameters of the vertically aligned InAs nanowires obtained by this method are mainly distributed between 20 and 50 nm. Detailed transmission electron microscope data show that the nanowires with thinner diameters tend to have less stacking faults and twin defects and high crystal quality pure wurtzite nanowires can be obtained. Using these vertically aligned InAs nanowires as the channel material of field effect transistors, we have obtained a field-effect mobility of ∼2800 cm2V-1s-1and anIon/Ioffratio of ∼104at room temperature. Our work provides a new method for the controlled growth of high-quality vertically aligned InAs nanowires on Si substrates.
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Affiliation(s)
- Lei Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
| | - Ran Zhuo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Gil E, Andre Y. Growth of long III-As NWs by hydride vapor phase epitaxy. Nanotechnology 2021; 32:162002. [PMID: 33434903 DOI: 10.1088/1361-6528/abdb14] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this review paper, we focus on the contribution of hydride vapor phase epitaxy (HVPE) to the growth of III-As nanowires (NWs). HVPE is the third epitaxial technique involving gaseous precursors together with molecular beam epitaxy (MBE) and metal-organic VPE (MOVPE) to grow III-V semiconductor compounds. Although a pioneer in the growth of III-V epilayers, HVPE arrived on the scene of NW growth the very last. Yet, HVPE brought different and interesting insights to the topic since HVPE is a very reactive growth system, exhibiting fast growth property, while growth is governed by the temperature-dependent kinetics of surface mechanisms. After a brief review of the specific attributes of HVPE growth, we first feature the innovative polytypism-free crystalline quality of cubic GaAs NWs grown by Au-assisted vapor-liquid-solid (VLS) epitaxy, on exceptional length and for radii down to 6 nm. We then move to the integration of III-V NWs with silicon. Special emphasis is placed on the nucleation issue experienced by both Au-assisted VLS MOVPE and HVPE, and a model demonstrates that the presence of Si atoms in the liquid droplets suppresses nucleation of NWs unless a high Ga concentation is reached in the catalyst droplet. The second known issue is the amphoteric behavior of Si when it is used as doping element for GaAs. On the basis of compared MBE and HVPE experimental data, a model puts forward the role of the As concentration in the liquid Au-Ga-As-Si droplets to yield p-type (low As content) or n-type (high As content) GaAs:Si NWs. We finally describe how self-catalysed VLS growth and condensation growth are implemented by HVPE for the growth of GaAs and InAs NWs on Si.
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Affiliation(s)
- Evelyne Gil
- Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
| | - Yamina Andre
- Université Clermont Auvergne, CNRS, SIGMA Clermont, Institut Pascal, F-63000 Clermont-Ferrand, France
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia
- Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S4L7, Canada
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Wong-Leung J, Yang I, Li Z, Karuturi SK, Fu L, Tan HH, Jagadish C. Engineering III-V Semiconductor Nanowires for Device Applications. Adv Mater 2020; 32:e1904359. [PMID: 31621966 DOI: 10.1002/adma.201904359] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2019] [Revised: 08/19/2019] [Indexed: 05/26/2023]
Abstract
III-V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.
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Affiliation(s)
- Jennifer Wong-Leung
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Inseok Yang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Siva Krishna Karuturi
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
- Research School of Electrical, Energy and Materials Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT2601, Australia
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Arif O, Zannier V, Dubrovskii VG, Shtrom IV, Rossi F, Beltram F, Sorba L. Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory. Nanomaterials (Basel) 2020; 10:nano10030494. [PMID: 32164178 PMCID: PMC7153585 DOI: 10.3390/nano10030494] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2020] [Revised: 02/28/2020] [Accepted: 03/06/2020] [Indexed: 06/10/2023]
Abstract
The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.
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Affiliation(s)
- Omer Arif
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Valentina Zannier
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Vladimir G. Dubrovskii
- School of Photonics, ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia;
| | - Igor V. Shtrom
- The Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia;
| | - Francesca Rossi
- IMEM—CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy
| | - Fabio Beltram
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
| | - Lucia Sorba
- NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy; (O.A.); (F.B.); (L.S.)
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Baboli MA, Slocum MA, Kum H, Wilhelm TS, Polly SJ, Hubbard SM, Mohseni PK. Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping. CrystEngComm 2019. [DOI: 10.1039/c8ce01666f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.
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Affiliation(s)
- Mohadeseh A. Baboli
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Michael A. Slocum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Hyun Kum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Thomas S. Wilhelm
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Stephen J. Polly
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Seth M. Hubbard
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Parsian K. Mohseni
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
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Chen K, Ding J, Zhang S, Tang X, Yue Y, Guo L. A General Bioinspired, Metals-Based Synergic Cross-Linking Strategy toward Mechanically Enhanced Materials. ACS Nano 2017; 11:2835-2845. [PMID: 28240883 DOI: 10.1021/acsnano.6b07932] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Creating lightweight engineering materials combining high strength and great toughness remains a significant challenge. Despite possessing-enhanced strength and stiffness, bioinspired/polymeric materials usually suffer from clearly reduced extensibility and toughness when compared to corresponding bulk polymer materials. Herein, inspired by tiny amounts of various inorganic impurities for mechanical improvement in natural materials, we present a versatile and effective metal ion (Mn+)-based synergic cross-linking (MSC) strategy incorporating eight types of metal ions into material bulks that can drastically enhance the tensile strength (∼24.1-70.8%), toughness (∼18.6-110.1%), modulus (∼21.6-66.7%), and hardness (∼6.4-176.5%) of multiple types of pristine materials (from hydrophilic to hydrophobic and from unary to binary). More importantly, we also explore the primarily elastic-plastic deformation mechanism and brittle fracture behavior (indentation strain of >5%) of the synergic cross-linked graphene oxide (Syn-GO) paper by means of in situ nanoindentation SEM. The MSC strategy for mechanically enhanced integration can be readily attributed to the formation of the complicated metals-based cross-linking/complex networks in the interfaces and intermolecules between functional groups of materials and various metal ions that give rise to efficient energy dissipation. This work suggests a promising MSC strategy for designing advanced materials with outstanding mechanical properties by adding low amounts (<1.0 wt %) of synergic metal ions serving as synergic ion-bonding cross-linkers.
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Affiliation(s)
- Ke Chen
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
| | - Jin Ding
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
| | - Shuhao Zhang
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
| | - Xuke Tang
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
| | - Yonghai Yue
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
| | - Lin Guo
- Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University , Beijing 100191, People's Republic of China
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