Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake

Properties and Applications of Random Lasers as Emerging Light Sources and Optical Sensors: A Review

In a random laser (RL), optical feedback arises from multiple scattering instead of conventional mirrors. RLs generate a laser-like emission, and meanwhile take advantage of a simpler and more flexible laser configuration. The applicability of RLs as light sources and optical sensors has been proved. These applications have been extended to the biological field, with tissues as natural scattering materials. Herein, the current state of the RL properties and applications was reviewed.

The Growth of High-Quality Hexagonal GaTe Nanosheets Induced by ZnO Nanocrystals

The monoclinic and hexagonal gallium tellurides (m-GaTe and h-GaTe) show different applications in optoelectronic devices. Compared to the m-GaTe, the h-GaTe is a metastable phase, which generally exists in ultrathin samples and is difficult to obtain by direct chemical reaction. Herein, a hexagonal ZnO-induced crystal growth strategy was used for the design and fabrication of h-GaTe. The high-quality h-GaTe nanosheets were successfully grown on the (001) surface of hexagonal ZnO by the chemical vapor deposition method under ambient pressure. The SEM, XPS, XRD, and HRTEM characterizations uncovered a flower-like nanosheet morphology and a hexagonal crystal structure for the obtained GaTe samples. Meanwhile, the conductive atomic force microscope measurement indicates that the obtained h-GaTe nanosheet is a p-type semiconductor. Based on the electron localization function simulation, the lattice-induced crystal growth of h-GaTe was demonstrated. The results give an insight into the synthesis of metastable phase crystal and open an avenue for fabricating new two-dimensional devices by p-type h-GaTe.