Layer-Dependent Nonlinear Optical Properties of WS2, MoS2, and Bi2S3 Films Synthesized by Chemical Vapor Deposition

Anomalous layer-dependent photoluminescence spectra of supertwisted spiral WS2

Twisted stacking of two-dimensional materials with broken inversion symmetry, such as spiral MoTe2 nanopyramids and supertwisted spiral WS2, emerge extremely strong second- and third-harmonic generation. Unlike well-studied nonlinear optical effects in these newly synthesized layered materials, photoluminescence (PL) spectra and exciton information involving their optoelectronic applications remain unknown. Here, we report layer- and power-dependent PL spectra of the supertwisted spiral WS2. The anomalous layer-dependent PL evolutions that PL intensity almost linearly increases with the rise of layer thickness have been determined. Furthermore, from the power-dependent spectra, we find the power exponents of the supertwisted spiral WS2 are smaller than 1, while those of the conventional multilayer WS2 are bigger than 1. These two abnormal phenomena indicate the enlarged interlayer spacing and the decoupling interlayer interaction in the supertwisted spiral WS2. These observations provide insight into PL features in the supertwisted spiral materials and may pave the way for further optoelectronic devices based on the twisted stacking materials.

Defect and interface/surface engineering synergistically modulated electron transfer and nonlinear absorption properties in MoX2 (X = Se, S, Te)@ZnO heterojunction

Systematic interface and defect engineering strategies have been demonstrated to be an effective way to modulate the electron transfer and nonlinear absorption properties in semiconductor heterojunctions. However, the role played by defects and interfacial strain in electron transfer at the interface of the MoX2 (X = Se, S, Te)@ZnO heterojunction remains poorly understood. Herein, using the MoX2@ZnO heterojunction, we reveal that vacancies play a critical role in the interfacial electron transfer of heterojunctions. Specifically, we present the defect and interface engineering of the MoX2@ZnO heterojunction for controlled charge transfer and electron excitation-relaxation. The experimental characterization combined with first-principles calculations showed that the presence of defects promoted the transport of photogenerated carriers at the heterojunction interface, thereby inhibiting their rapid recombination. The DFT calculation confirmed that the electron band structure, density of states and charge density distribution in the system changed after the formation of Mo-O bonds. On the basis of defects and interfacial stress and the effective charge transfer, the MoX2@ZnO heterojunction exhibited excellent excitation and emission behaviors. The nonlinear optical regulation behavior of TMDs is expected to be realized with the help of the defects and interface/surface synergistically modulated effect of ZnO nanoparticles. The local strain generation on the MoX2@ZnO heterojunction boundary provides a new method for the design of new heterogeneous materials and will be of great significance to investigate the contact physical behavior and application of metals and two-dimensional (2D) semiconductors. This work provides some inspiration for the construction of heterojunctions with rich defects and surface/interface charge transfer channels to promote tunable electron transfer dynamics, thereby achieving a good nonlinear optical conversion efficiency and efficient charge separation in optoelectronic functional materials.

Exceptional ultrafast nonlinear optical response of functionalized silicon nanosheets

The present work reports on the ultrafast saturable absorption (SA), optical limiting (OL), and the nonlinear refractive response of hydride-terminated silicon nanosheets (SiNS-H) differently functionalized with styrene and tert-butyl methacrylate (tBuMA), namely, SiNS-styrene and SiNS-tBuMA, using 50 fs, 400 nm and 70 fs, 800 nm laser pulses. SiNS-styrene and SiNS-tBuMA exhibit dramatically enhanced nonlinear optical (NLO) responses compared to SiNS-H, with their absorptive nonlinearity strongly dependent on the laser excitation wavelength. More specifically, the studied functionalized SiNSs reveal strong SA behavior under 400 nm laser excitation, with NLO absorption coefficients, saturable intensities, and modulation depths comparable to various two-dimensional (2D) materials, known to exhibit strong SA, such as graphene, black phosphorous (BP), some transition metal dichalcogenides (TMDs), and some MXenes. On the other hand, under 800 nm laser excitation, SiNS-styrene and SiNS-tBuMA show highly efficient OL performance with OL onset values of about 0.0045 and 0.0065 J cm-2, respectively, which are significantly lower than those of other 2D nanostructures. In addition, it is shown that both SiNS samples have great potential in already existing Si-based optoelectronic devices for optical-switching applications since they exhibit very strong NLO refraction comparable to that of bulk Si. The results of the present work demonstrate that the chemical functionalization of SiNSs provides a highly efficient strategy for the preparation of 2D Si-based nanostructures with enhanced NLO response in view of several optoelectronic and photonic applications, such as OL, SA, and all-optical switching.

High-Order Harmonics Generation in MoS2 Transition Metal Dichalcogenides: Effect of Nickel and Carbon Nanotube Dopants

The transition metal dichalcogenides have instigated a lot of interest as harmonic generators due to their exceptional nonlinear optical properties. Here, the molybdenum disulfide (MoS2) molecular structures with dopants being in a plasma state are used to demonstrate the generation of intense high-order harmonics. The MoS2 nanoflakes and nickel-doped MoS2 nanoflakes produced stronger harmonics with higher cut-offs compared with Mo bulk and MoS2 bulk. Conversely, the MoS2 with nickel nanoparticles and carbon nanotubes (MoS2-NiCNT) produced weaker coherent XUV emissions than other materials, which is attributed to the influence of phase mismatch. The influence of heating and driving pulse intensities on the harmonic yield and cut-off energies are investigated in MoS2 molecular structures. The enhanced coherent extreme ultraviolet emission at ~32 nm (38 eV) due to the 4p-4d resonant transitions is obtained from all aforementioned molecular structures, except for MoS2-NiCNT.

Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W^-1 at -0.1 V and 3.5 mAW^-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 10⁹ Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi₂ Te₃ /Bi₂ Se₃ /Bi₂ S₃ cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm^-2  h^-1 and ≈14.320 µmol cm^-2  h^-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.