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Wang Z, Wang H, Wang P, Shao Y. Robust Optical Physical Unclonable Function Based on Total Internal Reflection for Portable Authentication. ACS Appl Mater Interfaces 2024. [PMID: 38743936 DOI: 10.1021/acsami.4c03283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Physical unclonable functions (PUFs) utilize uncontrollable manufacturing randomness to yield cryptographic primitives. Currently, the fabrication of the most generally employed optical PUFs mainly depends on fluorescent, Raman, or plasmonic materials, which suffer inherent robustness issues. Herein, we construct an optical PUF with high environmental stability via total internal reflection (TIR-PUF) perturbed by randomly distributed polymer microspheres. The response image is transformed into encoded keys via an iterative binning procedure. The concentration of the polymer solution is optimized to debias the bit nonuniformity and maximize encoding capacity. The constructed TIR-PUF shows significantly high encoding capacity (2370) and markedly low total authentication error probability (1.614 × 10-23). The intra-Hamming distance is as low as 0.068, indicating the excellent readout reliability of TIR-PUF. The environmental stability of TIR-PUF has demonstrated promising results under a range of challenging conditions such as ultrasonic washing, high temperature, ultraviolet irradiation, and severe chemical environments. Moreover, the challenge-response pairs of our TIR-PUFs are demonstrated on an authentication system with low-power dissipation, lightweight components, and wireless imaging capture, rendering the possibility of portable authentication for practical applications.
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Affiliation(s)
- Zhiyuan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Pengxiang Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
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Wang Z, Wang H, Li F, Gao X, Shao Y. Physical Unclonable Functions Based on Photothermal Effect of Gold Nanoparticles. ACS Appl Mater Interfaces 2024; 16:17954-17964. [PMID: 38562008 DOI: 10.1021/acsami.3c18270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Physical unclonable functions (PUFs) based on uncontrollable fabrication randomness are promising candidates for anticounterfeiting applications. Currently, the most popular optical PUFs are generally constructed from the scattering, fluorescent, or Raman phenomenon of nanomaterials. To further improve the security level of optical PUFs, advanced functions transparent to the above optical phenomenon have always been perused by researchers. Herein, we propose a new type of PUF based on the photothermal effect of gold nanoparticles, which shows negligible scattering, fluorescent, or Raman responses. The gold nanoparticles are randomly dispersed onto the surface of fused silica, which can enhance the photothermal effect and facilitate high contrast responses. By tuning the areal density of the gold nanoparticles, the optimized encoding capacity (2319) and the total authentication error probability (3.6428 × 10-24) are achieved from our PUF due to excellent bit uniformity (0.519) and inter Hamming distances (0.503). Moreover, the intra-Hamming distance (0.044) indicates the desired reliability. This advanced PUF with invisible features and high contrast responses provides a promising opportunity to implement authentication and identification with high security.
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Affiliation(s)
- Zhiyuan Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Fenghua Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
| | - Xinyu Gao
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
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Esidir A, Pekdemir S, Kalay M, Onses MS. Ultradurable Embedded Physically Unclonable Functions. ACS Appl Mater Interfaces 2024; 16:16532-16543. [PMID: 38511845 PMCID: PMC10995905 DOI: 10.1021/acsami.4c01726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/22/2024]
Abstract
Physically unclonable functions (PUFs) have attracted growing interest for anticounterfeiting and authentication applications. The practical applications require durable PUFs made of robust materials. This study reports a practical strategy to generate extremely robust PUFs by embedding random features onto a substrate. The chaotic and low-cost electrohydrodynamic deposition process generates random polymeric features over a negative-tone photoresist film. These polymer features function as a conformal photomask, which protects the underlying photoresist from UV light, thereby enabling the generation of randomly positioned holes. Dry plasma etching of the substrate and removal of the photoresist result in the transfer of random features to the underlying silicon substrate. The matching of binary keys and features via different algorithms facilitates authentication of features. The embedded PUFs exhibit extreme levels of thermal (∼1000 °C) and mechanical stability that exceed the state of the art. The strength of this strategy emerges from the PUF generation directly on the substrate of interest, with stability that approaches the intrinsic properties of the underlying material. Benefiting from the materials and processes widely used in the semiconductor industry, this strategy shows strong promise for anticounterfeiting and device security applications.
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Affiliation(s)
- Abidin Esidir
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Materials Science and Engineering, Erciyes
University, Kayseri 38039, Turkey
- Graduate
School of Natural and Applied Science, Materials Science and Engineering
Program, Erciyes University, Kayseri 38039, Turkey
| | - Sami Pekdemir
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Aeronautical Engineering, Faculty of Aeronautics and Astronautics, Erciyes University, Kayseri 38039, Turkey
| | - Mustafa Kalay
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Electricity and Energy, Kayseri University, Kayseri 38039, Turkey
| | - Mustafa Serdar Onses
- ERNAM
- Nanotechnology Research and Application Center, Erciyes University, Kayseri 38039, Turkey
- Department
of Materials Science and Engineering, Erciyes
University, Kayseri 38039, Turkey
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Gao X, Wang H, Dong H, Shao J, Shao Y, Zhang L. Tunable Key-Size Physical Unclonable Functions Based on Phase Segregation in Mixed Halide Perovskites. ACS Appl Mater Interfaces 2023; 15:23429-23438. [PMID: 37140137 DOI: 10.1021/acsami.3c02193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Optical physical unclonable functions (PUFs) have been considered as an effective tool for anti-counterfeiting owing to the uncontrollable manufacturing process and excellent resistance to machine-learning attacks. However, most optical PUFs exhibit fixed challenge-response pairs and static encoding structures after they are manufactured, which significantly impedes the actual development. Herein, we propose a tunable key-size PUF based on reversible phase segregation in mixed halide perovskites with uncontrollable Br/I ratios under variable power densities. The basic performance of encryption keys of low and high power density was evaluated and indicated a high degree of uniformity, uniqueness, and readout repeatability. Merging the binary keys of low and high power density, tunable key-size PUF is realized with higher security. The proposed tunable key-size PUF offers new insights into the development of dynamic-structure PUFs and demonstrates a novel scheme for achieving higher security of anti-counterfeiting and authentication.
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Affiliation(s)
- Xinyu Gao
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Hu Wang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Hongxing Dong
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Jianda Shao
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Yuchuan Shao
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Long Zhang
- Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, 310024 Hangzhou, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
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