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Li Y, Hao Y, Ju M, Yao FZ, Wang K, Liang R, Zhou Z. Significantly Enhanced Electrostrain in Oriented Epitaxial Self-Assembled Aurivillius-Type Piezoelectric Films via Regulating Polarization Vectors. ACS Appl Mater Interfaces 2023; 15:23470-23478. [PMID: 37134269 DOI: 10.1021/acsami.3c02650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
High-temperature piezoelectric films with excellent piezoelectric and ferroelectric properties lay the foundation for the development of high-temperature piezo-MEMS devices. However, due to the poor piezoelectricity and strong anisotropy, it remains a challenge to obtain high quality Aurivillius-type high-temperature piezoelectric films with high performance, which impedes their practical implements. Here, a feasible polarization vector regulation strategy associated with oriented epitaxial self-assembled nanostructures for enhancing electrostrain is proposed. Guided by lattice matching relation, non-c-axis oriented epitaxial self-assembled Aurivillius-type calcium bismuth niobate (CaBi2Nb2O9, CBN) high-temperature piezoelectric films were successfully prepared on different oriented Nb-STO substrates. By the lattice matching relationship, hysteresis measurement, and piezoresponse force microscopy analysis, it is confirmed that the polarization vectors transform from a two-dimensional plane to a three-dimensional space, and the out-of-plane polarization switching is enhanced. A platform for more possible polarization vectors is provided in the self-assembled (013)CBN film. More importantly, enhanced ferroelectric (Pr ∼ 13.4 μC/cm2) and large strain (∼0.24%) were obtained in the (013)CBN film, which promotes the great application prospect of CBN piezoelectric films in high-temperature MEMS devices.
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Affiliation(s)
- Yiguan Li
- Shanghai Institute of Ceramics, Key laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
- University of Chinese Academy of Sciences, Shijingshan District, Beijing 100049, China
| | - Yanshuang Hao
- Shanghai Institute of Ceramics, Key laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Min Ju
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing 314500, China
| | - Fang-Zhou Yao
- Research Center for Advanced Functional Ceramics, Wuzhen Laboratory, Jiaxing 314500, China
| | - Ke Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100049, China
| | - Ruihong Liang
- Shanghai Institute of Ceramics, Key laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
| | - Zhiyong Zhou
- Shanghai Institute of Ceramics, Key laboratory of Inorganic Functional Materials and Devices, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China
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Zhang Y, Wang C, Huang H, Lu J, Liang R, Liu J, Peng R, Zhang Q, Zhang Q, Wang J, Gu L, Han XF, Chen LQ, Ramesh R, Nan CW, Zhang J. Deterministic reversal of single magnetic vortex circulation by an electric field. Sci Bull (Beijing) 2020; 65:1260-7. [PMID: 36747413 DOI: 10.1016/j.scib.2020.04.008] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2020] [Revised: 02/23/2020] [Accepted: 03/27/2020] [Indexed: 02/08/2023]
Abstract
The ability to control magnetic vortex is critical for their potential applications in spintronic devices. Traditional methods including magnetic field, spin-polarized current etc. have been used to flip the core and/or reverse circulation of vortex. However, it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy. Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures, which is controlled by using a bi-axial pulsed electric field. Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex. This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.
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Langenberg E, Paik H, Smith EH, Nair HP, Hanke I, Ganschow S, Catalan G, Domingo N, Schlom DG. Strain-Engineered Ferroelastic Structures in PbTiO 3 Films and Their Control by Electric Fields. ACS Appl Mater Interfaces 2020; 12:20691-20703. [PMID: 32292024 DOI: 10.1021/acsami.0c04381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO3 thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a1/a2 superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO3 on GdScO3-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
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Affiliation(s)
- Eric Langenberg
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hari P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Isabelle Hanke
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Steffen Ganschow
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
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Song C, Gao J, Liu J, Yang Y, Tian C, Hong J, Weng H, Zhang J. Atomically Resolved Edge States on a Layered Ferroelectric Oxide. ACS Appl Mater Interfaces 2020; 12:4150-4154. [PMID: 31885250 DOI: 10.1021/acsami.9b20580] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emerging surface/edge electronic phases driven by broken symmetry effects have attracted great attention in low-dimensional electronic systems. However, experimental proof on their existence in ferroelectric oxides at the atomic scale is still missing. In this work, metallic surface states are observed on layered Bi2WO6 by scanning tunneling microscopy/spectroscopy. Differential conductance is remarkably enhanced near the step edge compared with that on the terrace, forming a one-dimensional edge state. Density functional theory calculations verify that symmetry breaking at the surface determines the electronic structures and O 2p orbitals contribute the most to the density of states around the Fermi level. Our discovery provides a new strategy toward the hidden phases on other correlated oxide surfaces.
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Affiliation(s)
- Chuangye Song
- Department of Physics , Beijing Normal University , Beijing 100875 , China
- Institute of Physics , Chinese Academy of Science , Beijing 100190 , China
- School of Physics , University of Chinese Academy of Sciences , Beijing 100049 , China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , China
| | - Jiacheng Gao
- Institute of Physics , Chinese Academy of Science , Beijing 100190 , China
- School of Physics , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Junyan Liu
- School of Aerospace Engineering , Beijing Institute of Technology , Beijing 100081 , China
| | - Yuben Yang
- Department of Physics , Beijing Normal University , Beijing 100875 , China
| | - Chengfeng Tian
- Department of Physics , Beijing Normal University , Beijing 100875 , China
| | - Jiawang Hong
- School of Aerospace Engineering , Beijing Institute of Technology , Beijing 100081 , China
| | - Hongming Weng
- Institute of Physics , Chinese Academy of Science , Beijing 100190 , China
- School of Physics , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jinxing Zhang
- Department of Physics , Beijing Normal University , Beijing 100875 , China
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