Synthetic magnetoelectric coupling in a nanocomposite multiferroic

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films

BiFeO₃ (BFO), Bi_0.92Gd_0.08FeO₃ (BGFO) and Bi_0.92Gd_0.08Fe_0.95Ni_0.05O₃ (BGFNO) films are epitaxially grown on 0.7 wt% Nb-SrTiO₃ (NSTO) substrates. The strong ferroelectric property in BGFNO film is confirmed by piezoresponse force microscopy (PFM) and polarization versus voltage (P-V) measurement. It is also found that the Au/BGFNO/NSTO devices possess a ferroelectric resistance switching (RS) effect. Gd- and Ni-codoped BiFeO₃ is found to strongly enhance the resistance on/off ratio. A resistance on/off ratio as large as 3 × 10⁶ is achieved with an applied pulse voltage of -8 V and +4 V. In addition, the devices exhibit excellent retention and anti-fatigue characteristics. The memristor behavior of Au/BGFNO/NSTO is attributed to the switching of polarization states, which modulate the width and height of the barrier at the BGFNO/NSTO interface. The excellent resistive switching properties in Au/BGFNO/NSTO devices indicate the promising application in nonvolatile memory.

Crossover of positive and negative magnetoconductance in composites of nanosilica glass containing dual transition metal oxides

A facile sol-gel approach to prepare composites of nanosilica glass containing dual transition metal oxides with compositions xCoO·(20 - x)NiO·80SiO2 comprising x values 5 (NC-1), 10 (NC-2) and 15 (NC-3) within hexagonal pores of SBA-15 template has been demonstrated. The synergistic effect of dual transition metal oxide ions on MD properties and crossover of positive and negative magnetoconductance phenomena were observed in these nanocomposite systems. The physical origin of magnetoconductance switching is explained based on the factors: nanoconfinement effect, wave-function shrinkage and spin polarized electron hopping. DFT calculations were performed to understand the structural correlation of the nanoconfined system. The static (dc) and dynamic (ac) responses of magnetization revealed the spin-glass behaviour of the investigated samples. Both scaling law and Vogel-Fulcher law provide a satisfactory fit to our experimental results which are considered as a salient feature of the spin-glass system. Our studies indicate the possibilities of fabricating magnetically controlled multifunctional devices.

Phase separation enhanced magneto-electric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films

We study the origin of the magnetoelectric coupling in manganite films on ferroelectric substrates. We find large magnetoelectric coupling in La0.7Ca0.3MnO3/BaTiO3 ultra-thin films in experiments based on the converse magnetoelectric effect. The magnetization changes by around 30-40% upon applying electric fields on the order of 1 kV/cm to the BaTiO3 substrate, corresponding to magnetoelectric coupling constants on the order of α = (2-5) · 10(-7) s/m. Magnetic anisotropy is also affected by the electric field induced strain, resulting in a considerable reduction of coercive fields. We compare the magnetoelectric effect in pre-poled and unpoled BaTiO3 substrates. Polarized neutron reflectometry reveals a two-layer behavior with a depressed magnetic layer of around 30 Å at the interface. Magnetic force microscopy (MFM) shows a granular magnetic structure of the La0.7Ca0.3MnO3. The magnetic granularity of the La0.7Ca0.3MnO3 film and the robust magnetoelastic coupling at the La0.7Ca0.3MnO3/BaTiO3 interface are at the origin of the large magnetoelectric coupling, which is enhanced by phase separation in the manganite.

Electric field induced reversible 180° magnetization switching through tuning of interfacial exchange bias along magnetic easy-axis in multiferroic laminates

E-field control of interfacial exchange coupling and deterministic switching of magnetization have been demonstrated in two sets of ferromagnetic(FM)/antiferromagnetic(AFM)/ferroelectric(FE) multiferroic heterostructures, including NiFe/NiCoO/glass/PZN-PT (011) and NiFe/FeMn/glass/PZN-PT (011). We designed this experiment to achieve exchange bias tuning along the magnetic easy axis, which is critical for realizing reversible 180° magnetization deterministic switching at zero or small magnetic bias. Strong exchange coupling were established across AFM-FM interfaces, which plays an important role in voltage control of magnetization switching. Through the competition between the E-field induced uniaxial anisotropy in ferromagnetic layer and unidirectional anisotropy in antiferromagnetic layer, the exchange bias was significantly shifted by up to |∆Hex|/Hex = 8% in NiFe/FeMn/glass/PZN-PT (011) and 13% in NiFe/NiCoO/glass/PZN-PT (011). In addition, the square shape of the hysteresis loop, as well as a strong shape tunability of |∆Hex|/Hc = 67.5 ~ 125% in NiFe/FeMn/glass/PZN-PT and 30 ~ 38% in NiFe/NiCoO/glass/PZN-PT were achieved, which lead to a near 180° magnetization switching. Electrical tuning of interfacial exchange coupling in FM/AFM/FE systems paves a new way for realizing magnetoelectric random access memories and other memory technologies.