Shan X, Wang Q, Bian X, Li WQ, Chen GH, Zhu H. Graphene layers on Si-face and C-face surfaces and interaction with Si and C atoms in layer controlled graphene growth on SiC substrates.
RSC Adv 2015. [DOI:
10.1039/c5ra12596k]
[Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Abstract
It is important to understand the interface and interaction between graphene layers and SiC surfaces as well as the interaction of key intermediate Si and C atoms with these surfaces and interfaces in epitaxial graphene growth on SiC substrates.
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