A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties

Thermal CVD of Amorphous Germanium Films From 2, 5-Bis (Tert.-Butyl) -2, 5-Diaza-l-Germa-Cyclopentane Organometallic Precursor

A novel organometallic germylene precursor has been synthesized and used for the deposition of amorphous germanium by thermal OM CVD at temperatures below 300°C. The films are of high purity with an oxygen content below the present detection limit of about < 1018 cm−3. Preliminary results on the electronic properties are reported.