The synthesis of single PdAu bimetallic nanowire: feasibility study for hydrogen sensing

High-Sensitive MEMS Hydrogen Sulfide Sensor made from PdRh Bimetal Hollow Nanoframe Decorated Metal Oxides and Sensitization Mechanism Study

Here we report the fabrication of a high performance metal oxide semiconductor (MOS) sensor for the detection of hydrogen sulfide (H₂S) using PdRh bimetal hollow nanocube (HC) with Rh-rich hollow frame and Pd-rich core frame as sensitizing materials. PdRh bimetal HC with the edge-length about 10 nm was prepared by chemical etching PdRh bimetal solid nanocube (SC) in HNO₃ aqueous solution. The results of gas-sensing tests indicate that the response value order of the MEMS gas sensors based on MOSs (including ZnO, MoO₃ and SnO₂) is as follows: R_PdRh HC/MOS > R_PdRh SC/MOS > R_MOS. First, in the system of ZnO, gas sensor modified by PdRh (PdRh SC/ZnO and PdRh HC/ZnO) possess enhanced H₂S sensing performance with a better response and excellent low-concentration detection capability (down to 15 ppb) comparing to pure ZnO. The improved H₂S sensing performance could be attributed to the good conductivity of Rh-rich frame, the high catalytic activity of PdRh bimetal and formation of Schottky barrier-type junctions and defect. Second, PdRh HC/ZnO sensor shows better response (185-1 ppm of H₂S) compared to PdRh SC/ZnO sensor (108-1 ppm of H₂S), which is due to the higher specific surface area of PdRh HC/ZnO and good gas diffusion of the hollow structure. This work indicate that the sensitization characteristics of PdRh bimetal HC will provide new paradigms for the future development of the high performance sensor.

Hollow Pd-Ag Composite Nanowires for Fast Responding and Transparent Hydrogen Sensors

Pd based alloy materials with hollow nanostructures are ideal hydrogen (H₂) sensor building blocks because of their double-H₂ sensing active sites (interior and exterior side of hollow Pd alloy) and fast response. In this work, for the first time, we report a simple fabrication process for preparing hollow Pd-Ag alloy nanowires (Pd@Ag HNWs) by using the electrodeposition of lithographically patterned silver nanowires (NWs), followed by galvanic replacement reaction (GRR) to form palladium. By controlling the GRR time of aligned Ag NWs within an aqueous Pd²⁺-containing solution, the compositional transition and morphological evolution from Ag NWs to Pd@Ag HNWs simultaneously occurred, and the relative atomic ratio between Pd and Ag was controlled. Interestingly, a GRR duration of 17 h transformed Ag NWs into Pd@Ag HNWs that showed enhanced H₂ response and faster sensing response time, reduced 2.5-fold, as compared with Ag NWs subjected to a shorter GRR period of 10 h. Furthermore, Pd@Ag HNWs patterned on the colorless and flexible polyimide (cPI) substrate showed highly reversible H₂ sensing characteristics. To further demonstrate the potential use of Pd@Ag HNWs as sensing layers for all-transparent, wearable H₂ sensing devices, we patterned the Au NWs perpendicular to Pd@Ag HNWs to form a heterogeneous grid-type metallic NW electrode which showed reversible H₂ sensing properties in both bent and flat states.

Shape-controlled synthesis of palladium and copper superlattice nanowires for high-stability hydrogen sensors

For hydrogen sensors built with pure Pd nanowires, the instabilities causing baseline drifting and temperature-driven sensing behavior are limiting factors when working within a wide temperature range. To enhance the material stability, we have developed superlattice-structured palladium and copper nanowires (PdCu NWs) with random-gapped, screw-threaded, and spiral shapes achieved by wet-chemical approaches. The microstructure of the PdCu NWs reveals novel superlattices composed of lattice groups structured by four-atomic layers of alternating Pd and Cu. Sensors built with these modified NWs show significantly reduced baseline drifting and lower critical temperature (259.4 K and 261 K depending on the PdCu structure) for the reverse sensing behavior than those with pure Pd NWs (287 K). Moreover, the response and recovery times of the PdCu NWs sensor were of ~9 and ~7 times faster than for Pd NWs sensors, respectively.

Effect of molecular adsorption on the electrical conductance of single au nanowires fabricated by electron-beam lithography and focused ion beam etching

Metal nanowires are one of the potential candidates for nanostructured sensing elements used in future portable devices for chemical detection; however, the optimal methods for fabrication have yet to be fully explored. Two routes to nanowire fabrication, electron-beam lithography (EBL) and focused ion beam (FIB) etching, are studied, and their electrical and chemical sensing properties are compared. Although nanowires fabricated by both techniques exhibit ohmic conductance, I-V characterization indicates that nanowires fabricated by FIB etching exhibit abnormally high resistivity. In addition, the resistivity of nanowires fabricated by FIB etching shows very low sensitivity toward molecular adsorption, while those fabricated by EBL exhibit sensitive resistance change upon exposure to solution-phase adsorbates. The mean grain sizes of nanowires prepared by FIB etching are much smaller than those fabricated by EBL, so their resistance is dominated by grain-boundary scattering. As a result, these nanowires are much less sensitive to molecular adsorption, which mediates nanowire conduction through surface scattering. The much reduced mean grain sizes of these nanowires correlate with Ga ion damage caused during the ion milling process. Thus, even though the nanowires prepared by FIB etching can be smaller than their EBL counterparts, their reduced sensitivity to adsorption suggests that nanowires produced by EBL are preferred for chemical and biochemical sensing applications.