Spin-dependent carrier mobility and its gate-voltage modifying effects for functionalized single walled black phosphorus tubes

First-principles study of magnetism in some novel MXene materials

Magnetic two-dimensional materials have gained considerable attention in recent years due to their special topologies and promising applications in electronic and spintronic devices. As a new family of two-dimensional materials, MXene materials may have unusual magnetic properties. In this work, the structural stabilities and electronic properties of 1H and 1T type pristine M₂C (M = Sc, Ti, Fe, Co, Ni, Cu, Zn) MXenes with different magnetic configurations were calculated and compared. The critical temperatures of the magnetic MXenes were evaluated through Monte Carlo simulations using the spin–exchange coupling parameters. The results suggest that the ground-state 1T-Ti₂C and 1T-Fe₂C, 1H-Co₂C MXenes are antiferromagnetic or ferromagnetic materials with high Néel or Curie temperatures. Different from the other pristine M₂C MXenes with metallic properties, indirect band gaps were found for the 1T-Ti₂C and 1T-Ni₂C MXenes, which may be useful for their application in information storage or sensors. The findings are expected to promote the development of novel devices based on MXenes and their magnetic properties.

Magnetic two-dimensional materials have gained considerable attention due to their special topologies and promising applications in electronic and spintronic devices, and the critical temperature could be evaluated through Monte Carlo simulations.

Magneto-electronics, transport properties, and tuning effects of arsenene armchair nanotubes doped with transition metal atoms

Recently, the arsenic monolayer has been successfully fabricated by micromechanical stripping. However, it is a non-magnetic semiconductor, including its derivatives. Here, we theoretically explore how to induce magnetism for arsenene armchair nanotubes (AsANTs) with a low-concentration TM (TM = Co, Y, Rh, Ni, Mo, Ru) atom doping, especially focusing on their structural stability, magneto-electronic property, carrier mobility, and strain effects. The high stability of these doped tubes are confirmed by the calculated binding energy and formation energy, as well as Forcite annealing molecular dynamics simulations. The AsANT can act as bandgap narrowed non-magnetic semiconductors or highly spin-polarized magnetic semiconductors (half-semiconductor or bipolar magnetic semiconductor) depending on TM types, suggesting different promising applications such as developing infrared photodetectors with broadband detectionin or spintronic devices. The magnetic thermal stability beyond room temperature is predicted for doped tubes. Furthermore, the carrier mobility of AsANTs can be tuned into a wide region by TM doping, but it is enhanced in most cases. The carrier and spin polarity of mobility can also be clearly observed. Particularly, the applied strain can induce a rich magnetic phase transition among a half-semiconductor, half-metal, bipolar magnetic semiconductor and nonmagnetic state. Furthermore, the presented stepwise change of total magnetic moment between high magnetized and nonmagnetic states is highly desirable for engineering a mechanical switch which can reversibly work between magnetism and demagnetism to control spin-polarized transport by applying strain.

Strain-Induced Band Modulation, Work Function, and QTAIM Analysis of Surface O-Functionalized Ti2C MXene

Functionalized MXenes have wide applications in the fields of gas sensors, thermoelectric materials, and hydrogen storage. Strain-induced band engineering and the work function (WF) of Ti2CO2 MXene are investigated theoretically. The calculations reveal that Ti2CO2 MXenes are stable because of the negative E coh, and all the strains considered are within the elastic limit. For Ti2CO2 MXene, strain-induced blue shift of the Ti d state results in the transformation from a semiconductor to a metal. At about 4%, Ti2CO2 MXene transforms from an indirect band gap to a direct band gap. The decreased WF induced by the strain improves the power efficiency of Ti2CO2 MXene.

Electronic and transport properties and physical field coupling effects for net-Y nanoribbons

Recently, a new type of quasi-1D graphene-like nanoribbons, periodically embedded with four- and eight- membered rings, has been successfully fabricated, and based on this structure, a novel planar 2D carbon allotrope, the so-called the net-Y, has been proposed. Here, we study various nanoribbons derived from such a 2D monolayer focusing on the structure stability, electronic, and transport properties, especially on the physical field coupling effects of electronic behaviors. Very high stability is predicted for various types of nanoribbons by the calculated binding energy and molecular dynamics simulation. Different edge shapes and widths have a significant influence on their electronic properties. Armchair nanoribbons are always semiconductors, and possess a high carrier mobility. After hydrogen termination, some metallic nanoribbons can become semiconductors or quasi-metals with massless Dirac-fermion behavior. In particular, the electronic properties of ribbons can be effectively modulated by applying strain and electric field. The band gap size and the transition from indirect to direct band gap can be realized upon strain or electric field. These flexibly tunable electronic properties for nanoribbons expand their applications in nanoelectronics and optoelectronics.