Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure

Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.

Direct and converse nonlinear magnetoelectric coupling in multiferroic composites with ferromagnetic and ferroelectric phases

In this paper, we develop a theoretical principle to calculate the direct and converse magnetoelectric (ME) coupling response of ferromagnetic/ferroelectric composites with 2-2 connectivity. We first present an experimentally based constitutive equation for Terfenol-D, and then build the mechanism of domain switch for the ferroelectric phase. In the latter, the change of Gibbs free energy, thermodynamic driving force and kinetic equations for domain growth are also established. These two sets of constitutive equations are shown to capture the experimental data of Terfenol-D and PZT, respectively, well. For the direct effect under an applied magnetic field, the induced electric field and the overall ME coupling coefficient are determined. For the converse effect under an applied electric field, the induced magnetization and the excited magnetic field are obtained. Both the induced electric filed under direct effect and the excited magnetic field under converse effect are shown to display the hysteretic characteristics, and also in good agreement with experiments. We conclude that the developed theory can both qualitatively and quantitatively reflect the essential features of nonlinear direct and converse ME coupling of the multiferroic composites.

Bi-directional coupling in strain-mediated multiferroic heterostructures with magnetic domains and domain wall motion

Strain-coupled multiferroic heterostructures provide a path to energy-efficient, voltage-controlled magnetic nanoscale devices, a region where current-based methods of magnetic control suffer from Ohmic dissipation. Growing interest in highly magnetoelastic materials, such as Terfenol-D, prompts a more accurate understanding of their magnetization behavior. To address this need, we simulate the strain-induced magnetization change with two modeling methods: the commonly used unidirectional model and the recently developed bidirectional model. Unidirectional models account for magnetoelastic effects only, while bidirectional models account for both magnetoelastic and magnetostrictive effects. We found unidirectional models are on par with bidirectional models when describing the magnetic behavior in weakly magnetoelastic materials (e.g., Nickel), but the two models deviate when highly magnetoelastic materials (e.g., Terfenol-D) are introduced. These results suggest that magnetostrictive feedback is critical for modeling highly magnetoelastic materials, as opposed to weaker magnetoelastic materials, where we observe only minor differences between the two methods' outputs. To our best knowledge, this work represents the first comparison of unidirectional and bidirectional modeling in composite multiferroic systems, demonstrating that back-coupling of magnetization to strain can inhibit formation and rotation of magnetic states, highlighting the need to revisit the assumption that unidirectional modeling always captures the necessary physics in strain-mediated multiferroics.

Giant magneto-electric coupling in 100 nm thick Co capped by ZnO nanorods

Here we report a giant, completely reversible magneto-electric coupling of 100 nm polycrystalline Co layer in contact with ZnO nanorods. When the sample is under an applied bias of ±2 V, the Co magnetic coercivity is reduced by a factor 5 from the un-poled case, with additionally a reduction of total magnetic moment in Co. Taking into account the chemical properties of ZnO nanorods measured by X-rays absorption near edge spectroscopy under bias, we conclude that these macroscopic effects on the magnetic response of the Co layer are due to the microstructure and the strong strain-driven magneto-electric coupling induced by the ZnO nanorods, whose nanostructuration maximizes the piezoelectric response under bias.

Strain-Mediated Coexistence of Volatile and Nonvolatile Converse Magnetoelectric Effects in Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructure

Strain-mediated ferromagnetic/ferroelectric (FE) heterostructures have played an important role in multiferroic materials to investigate the electric-field control of magnetism in the past decade, due to their excellent performances, such as room-temperature operation and large magnetoelectric (ME) coupling effect. Because of the different FE-switching-originated strain behaviors and varied interfacial coupling effect, both loop-like (nonvolatile) and butterfly-like (volatile) converse ME effects have been reported. Here, we investigate the electric-field control of magnetism in a multiferroic heterostructure composed of a polycrystalline Fe thin film and a Pb(Mg_1/3Nb_2/3)_0.7Ti_0.3O₃ single crystal, and the experimental results exhibit complex behaviors, suggesting the coexistence of volatile and nonvolatile converse ME effects. By separating the symmetrical and antisymmetrical parts of the electrical modulation of magnetization, we distinguished the loop-like hysteresis and butterfly-like magnetization changes tuned by electric fields, corresponding to the strain effects related to the FE 109° switching and 71/180° switching, respectively. Further magnetic-field-dependent as well as angular-dependent investigation of the converse ME effect confirmed the strain-mediated magnetism involving competition among the Zeeman energy, magnetocrystalline anisotropy energy, and strain-generated magnetoelastic energy. This study is helpful for understanding the electric-field control of magnetism in multiferroic heterostructures as well as its relevant applications.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Multiferroic Heterostructures Integrating Ferroelectric and Magnetic Materials

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and magnetic materials, with interfacial coupling between electric polarization and magnetization, through the exchange of elastic, electric, and magnetic energy. Although the nature of the interfaces remains to be unraveled, such cross coupling can be utilized to manipulate the magnetization (or polarization) with an electric (or magnetic) field, known as a converse (or direct) magnetoelectric effect. It can be exploited to significantly improve the performance of or/and add new functionalities to many existing or emerging devices such as memory devices, tunable microwave devices, sensors, etc. The exciting technological potential, along with the rich physical phenomena at the interface, has sparked intensive research on multiferroic heterostructures for more than a decade. Here, we summarize the most recent progresses in the fundamental principles and potential applications of the interface-based magnetoelectric effect in multiferroic heterostructures, and present our perspectives on some key issues that require further study in order to realize their practical device applications.

Intrinsic interfacial phenomena in manganite heterostructures

We review recent advances in our understanding of interfacial phenomena that emerge when dissimilar materials are brought together at atomically sharp and coherent interfaces. In particular, we focus on phenomena that are intrinsic to the interface and review recent work carried out on perovskite manganites interfaces, a class of complex oxides whose rich electronic properties have proven to be a useful playground for the discovery and prediction of novel phenomena.

Effect of strain on voltage-controlled magnetism in BiFeO₃-based heterostructures

Voltage-modulated magnetism in magnetic/BiFeO₃ heterostructures can be driven by a combination of the intrinsic ferroelectric-antiferromagnetic coupling in BiFeO₃ and the antiferromagnetic-ferromagnetic exchange interaction across the heterointerface. However, ferroelectric BiFeO₃ film is also ferroelastic, thus it is possible to generate voltage-induced strain in BiFeO₃ that could be applied onto the magnetic layer across the heterointerface and modulate magnetism through magnetoelastic coupling. Here, we investigated, using phase-field simulations, the role of strain in voltage-controlled magnetism for these BiFeO₃-based heterostructures. It is predicted, under certain condition, coexistence of strain and exchange interaction will result in a pure voltage-driven 180° magnetization reversal in BiFeO₃-based heterostructures.