Self-oscillations of domains in doped GaAs-AlAs superlattices

Designing Hyperchaos and Intermittency in Semiconductor Superlattices

Weakly coupled semiconductor superlattices under dc voltage bias are excitable systems with many degrees of freedom that may exhibit spontaneous chaos at room temperature and act as fast physical random number generator devices. Superlattices with identical periods exhibit current self-oscillations due to the dynamics of charge dipole waves but chaotic oscillations exist on narrow voltage intervals. They disappear easily due to variation in structural growth parameters. Based on numerical simulations, we predict that inserting two identical sufficiently separated wider wells increases superlattice excitability by allowing wave nucleation at the modified wells and more complex dynamics. This system exhibits hyperchaos and varieties of intermittent chaos in extended dc voltage ranges. Unlike in ideal superlattices, our chaotic attractors are robust and resilient against noises and against controlled random disorder due to growth fluctuations.

Fast Detection of a Weak Signal by a Stochastic Resonance Induced by a Coherence Resonance in an Excitable GaAs/Al_{0.45}Ga_{0.55}As Superlattice

The effect of a coherence resonance is observed experimentally in a GaAs/Al_{0.45}Ga_{0.55}As superlattice under dc bias at room temperature, which is driven by noise. For an applied voltage, for which no current self-oscillations are observed, regular current self-oscillations with a frequency of about 82 MHz are induced by exceeding a certain noise amplitude. In addition, a novel kind of a stochastic resonance is identified, which is triggered by the coherence resonance. This stochastic resonance appears when the device is driven by an external ac signal with a frequency, which is relatively close to that of the regular current self-oscillations at the coherence resonance. The intrinsic oscillation mode in the coherence resonance is found to be phase locked by an extremely weak ac signal. It is demonstrated that an excitable superlattice device can be used for the fast detection of weak signals submerged in noise. These results are very well reproduced by results using numerical simulations based on a sequential resonant tunneling model of nonlinear electron transport in semiconductor superlattices.

Control of coherence resonance in semiconductor superlattices

We study the effect of time-delayed feedback control and Gaussian white noise on the spatiotemporal charge dynamics in a semiconductor superlattice. The system is prepared in a regime where the deterministic dynamics is close to a global bifurcation, namely, a saddle-node bifurcation on a limit cycle. In the absence of control, noise can induce electron charge front motion through the entire device, and coherence resonance is observed. We show that with appropriate selection of the time-delayed feedback parameters the effect of coherence resonance can be either enhanced or destroyed, and the coherence of stochastic domain motion at low noise intensity is dramatically increased. Additionally, the purely delay-induced dynamics in the system is investigated, and a homoclinic bifurcation of a limit cycle is found.

Noise-induced front motion: signature of a global bifurcation

We show that front motion can be induced by noise in a spatially extended excitable system with a global constraint. Our model system is a semiconductor superlattice exhibiting complex dynamics of electron accumulation and depletion fronts. The presence of noise induces a global change in the dynamics of the system forcing stationary fronts to move through the entire device. We demonstrate the effect of coherence resonance in our model; i.e., there is an optimal level of noise at which the regularity of front motion is enhanced. Physical insight is provided by relating the space-time dynamics of the fronts with a phase-space analysis.

Self-stabilization of high-frequency oscillations in semiconductor superlattices by time-delay autosynchronization

We present a scheme to stabilize high-frequency domain oscillations in semiconductor superlattices by a time-delayed feedback loop. Applying concepts from chaos control theory we propose to control the spatiotemporal dynamics of fronts of accumulation and depletion layers which are generated at the emitter and may collide and annihilate during their transit, and thereby suppress chaos. The proposed method only requires the feedback of internal global electrical variables, viz., current and voltage, which makes the practical implementation very easy.

Hybrid model for chaotic front dynamics: from semiconductors to water tanks

We present a general method for studying front propagation in nonlinear systems with a global constraint in the language of hybrid tank models. The method is illustrated in the case of semiconductor superlattices, where the dynamics of the electron accumulation and depletion fronts shows complex spatiotemporal patterns, including chaos. We show that this behavior may be elegantly explained by a tank model, for which analytical results on the emergence of chaos are available. In particular, for the case of three tanks the bifurcation scenario is characterized by a modified version of the one-dimensional iterated tent map.

Motion of wave fronts in semiconductor superlattices

An analysis of wave front motion in weakly coupled doped semiconductor superlattices is presented. If a dimensionless doping is sufficiently large, the superlattice behaves as a discrete system presenting front propagation failure and the wave fronts can be described near the threshold currents J(i) (i=1,2) at which they depin and move. The wave front velocity scales with current as |J-J(i)|(1/2). If the dimensionless doping is low enough, the superlattice behaves as a continuum system and wave fronts are essentially shock waves whose velocity obeys an equal area rule.

Dynamic scenarios of multistable switching in semiconductor superlattices

We analyze the dynamics of charge distributions in weakly coupled, doped, dc voltage biased semiconductor superlattices subject to voltage steps of different sizes. Qualitatively different current responses to voltage switching processes have been observed experimentally. We explain them by invoking distinct scenarios for electric-field domain formation, validated by numerical simulations. Furthermore, we investigate the transient from an unstable to a stable point in the current-voltage characteristics after a steplike or ramplike increase of the external voltage.

Wave fronts may move upstream in semiconductor superlattices

In weakly coupled, current biased, doped semiconductor superlattices, domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.