Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

Transient optical non-linearity in p-Si induced by a few cycle extreme THz field

We study the impact of a few cycle extreme terahertz (THz) radiation (the field strength E_THz ∼1-15 MV/cm is well above the DC-field breakdown threshold) on a p-doped Si wafer. Pump-probe measurements of the second harmonic of a weak infrared probe were done at different THz field strengths. The second harmonic yield has an unusual temporal behavior and does not follow the common instantaneous response, ∝ETHz2. These findings were attributed to: (i) the lattice strain by the ponderomotive force of the extreme THz pulse at the maximal THz field strength below 6 MV/cm and (ii) the modulation of the THz field-induced impact ionization rate at the optical probe frequency (due to the modulation of the free carriers' drift kinetic energy from the probe field) at the THz field strength above 6-8 MV/cm.

Enhanced optical second-harmonic generation from the current-biased graphene/SiO2/Si(001) structure

We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001) substrate is enhanced about 3 times by the flow of direct current electric current in graphene. Measurements of rotational-anisotropy SHG revealed that the current-induced SHG from the current-biased graphene/SiO2/Si(001) structure undergoes a phase inversion as the measurement location on graphene is shifted laterally along the current flow direction. The enhancement is due to current-associated charge trapping at the graphene/SiO2 interface, which introduces a vertical electric field across the SiO2/Si interface that produces electric field-induced SHG. The phase inversion is due to the positive-to-negative polarity switch in the current direction of the trapped charges at the current-biased graphene/SiO2 interface.

Nonlinear optical spectroscopy of suboxides at oxidized Si(111) interfaces

Native oxidation of the Si(111)(1 x 1)H surface causes the appearance and disappearance of second-harmonic generation (SHG) resonances related to specific bonding configurations of Si atoms at the interface. Resonances at 3.52 eV two-photon energy observed in p-polarized SHG spectra are indicative of a Si suboxide configuration present in a partially oxidized Si surface bilayer. Similar resonances are observed in spectra of thermally oxidized Si(111) and point to Si2+ suboxide states at the buried interface.

Three-dimensional electric field visualization utilizing electric-field-induced second-harmonic generation in nematic liquid crystals

An electric-field-induced second-harmonic-generation signal in a nematic liquid crystal is used to map the electric field in an integrated-circuit-like sample. Since the electric-field-induced second-harmonic-generation signal intensity exhibits a strong dependence on the polarization of the incident laser beam, both the amplitude and the orientation of the electric field vectors can be measured. Combined with scanning second-harmonic-generation microscopy, three-dimensional electric field distribution can be easily visualized with high spatial resolution of the order of 1 microm.

Frequency-domain interferometric second-harmonic spectroscopy

We report a new spectroscopic technique to measure simultaneously the intensity and the phase of second-harmonic (SH) radiation over a broad spectral range without laser tuning. Temporally separated SH pulses from two sources, excited by the same broad-bandwidth 15-fs Ti:sapphire fundamental pulse, interfere in a spectrometer to yield frequency-domain interference fringes. We demonstrate the technique by measuring the strongly bias-dependent phase of SH radiation from a Si/SiO(2)/Cr metal-oxide-semiconductor capacitor in the spectral range of the SiE(1) critical point.

Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001) SiO(2) interface

Carrier-induced screening of the dc electric field at the Si(001)-SiO(2) interface is observed by intensity-dependent and femtosecond-time-resolved second-harmonic spectroscopy. The screening occurs on a time scale of ~?(p)(-1) , the reciprocal plasma frequency of the generated carriers.