Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-Doped SrTiO3 substrate

Superconductivity enhancement in FeSe/SrTiO3: a review from the perspective of electron-phonon coupling

Single-layer FeSe films grown on SrTiO3, with the highest superconducting transition temperature (T C) among all the iron-based superconductors, serves as an ideal platform for studying the microscopic mechanisms of high-T C superconductivity. The significant role of interfacial coupling has been widely recognized, while the precise nature of the T C enhancement remains open. In this review, we focus on the investigations of the interfacial coupling in FeSe/SrTiO3 from the perspective of electron-phonon coupling (EPC). The main content will include an overview of the experimental measurements associated with different theoretical models and arguments about the EPC. Especially, besides the discussions of EPC based on the measurements of electronic states, we will emphasize the analyses based on phonon measurements. A uniform picture about the nature of the EPC and its relation to the T C enhancement in FeSe/SrTiO3 has still not achieved, which should be the key for further studies aiming to the in-depth understanding of high-T C superconductivity and the discovery of new superconductors with even enhanced T C.

The Interface Structure of FeSe Thin Film on CaF2 Substrate and its Influence on the Superconducting Performance

The investigations into the interfaces in iron selenide (FeSe) thin films on various substrates have manifested the great potential of showing high-temperature-superconductivity in this unique system. In present work, we obtain FeSe thin films with a series of thicknesses on calcium fluoride (CaF₂) (100) substrates and glean the detailed information from the FeSe/CaF₂ interface by using scanning transmission electron microscopy (STEM). Intriguingly, we have found the universal existence of a calcium selenide (CaSe) interlayer with a thickness of approximate 3 nm between FeSe and CaF₂ in all the samples, which is irrelevant to the thickness of FeSe layers. A slight Se deficiency occurs in the FeSe layer due to the formation of CaSe interlayer. This Se deficiency is generally negligible except for the case of the ultrathin FeSe film (8 nm in thickness), in which the stoichiometric deviation from FeSe is big enough to suppress the superconductivity. Meanwhile, in the overly thick FeSe layer (160 nm in thickness), vast precipitates are found and recognized as Fe-rich phases, which brings about degradation in superconductivity. Consequently, the thickness dependence of superconducting transition temperature (T_c) of FeSe thin films is investigated and one of our atmosphere-stable FeSe thin film (127 nm) possesses the highest T_c^onset/T_c^zero as 15.1 K/13.4 K on record to date in the class of FeSe thin film with practical thickness. Our results provide a new perspective for exploring the mechanism of superconductivity in FeSe thin film via high-resolution STEM. Moreover, approaches that might improve the quality of FeSe/CaF₂ interfaces are also proposed for further enhancing the superconducting performance in this system.

High-temperature superconductivity in one-unit-cell FeSe films

Since the dramatic enhancement of the superconducting transition temperature (T _c) was reported in a one-unit-cell FeSe film grown on a SrTiO₃ substrate (1-UC FeSe/STO) by molecular beam epitaxy (MBE), related research on this system has become a new frontier in condensed matter physics. In this paper, we present a brief review on this rapidly developing field, mainly focusing on the superconducting properties of 1-UC FeSe/STO. Experimental evidence for high-temperature superconductivity in 1-UC FeSe/STO, including direct evidence revealed by transport and diamagnetic measurements, as well as other evidence from scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), are overviewed. The potential mechanisms of the enhanced superconductivity are also discussed. There are accumulating arguments to suggest that the strengthened Cooper pairing in 1-UC FeSe/STO originates from the interface effects, specifically the charge transfer and coupling to phonon modes in the TiO₂ plane. The study of superconductivity in 1-UC FeSe/STO not only sheds new light on the mechanism of high-temperature superconductors with layered structures, but also provides an insight into the exploration of new superconductors by interface engineering.

Observation of Double-Dome Superconductivity in Potassium-Doped FeSe Thin Films

We report on the emergence of two disconnected superconducting domes in alkali-metal potassium- (K-)doped FeSe ultrathin films grown on graphitized SiC(0001). The superconductivity exhibits hypersensitivity to K dosage in the lower-T_{c} dome, whereas in the heavily electron-doped higher-T_{c} dome it becomes spatially homogeneous and robust against disorder, supportive of a conventional Cooper-pairing mechanism. Furthermore, the heavily K-doped multilayer FeSe films all reveal a large superconducting gap of ∼14  meV, irrespective of film thickness, verifying the higher-T_{c} superconductivity only in the topmost FeSe layer. The unusual finding of a double-dome superconducting phase is a step towards the mechanistic understanding of superconductivity in FeSe-derived superconductors.

Superconductivity below 20 K in heavily electron-doped surface layer of FeSe bulk crystal

A superconducting transition temperature (T_c) as high as 100 K was recently discovered in one monolayer FeSe grown on SrTiO₃. The discovery ignited efforts to identify the mechanism for the markedly enhanced T_c from its bulk value of 8 K. There are two main views about the origin of the T_c enhancement: interfacial effects and/or excess electrons with strong electron correlation. Here, we report the observation of superconductivity below 20 K in surface electron-doped bulk FeSe. The doped surface layer possesses all the key spectroscopic aspects of the monolayer FeSe on SrTiO₃. Without interfacial effects, the surface layer state has a moderate T_c of 20 K with a smaller gap opening of 4.2 meV. Our results show that excess electrons with strong correlation cannot induce the maximum T_c, which in turn reveals the need for interfacial effects to achieve the highest T_c in one monolayer FeSe on SrTiO₃.

Thin FeSe film on SrTiO₃ substrate becomes a superconductor with a transition temperature over 100 K, yet the origin remains controversial. Here, Seo et al. show superconductivity below 20 K on the electron-doped surface of an FeSe crystal, suggesting a decisive role of interfacial effects in the enhancement of superconductivity.

Thickness-Dependent Coherent Phonon Frequency in Ultrathin FeSe/SrTiO₃ Films

Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump-probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Our results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.