Synthesis and characterization of nanoparticle thin films of a-(PbSe)100-xCdx lead chalcogenides

Optimal Blending of PbSe and CdSe in Polycrystalline PbCdSe Nanocomposite Film: Improved Carrier Multiplication and Enhanced Photoconversion Efficiency

The present work reports galvanostatic electro-co-deposition of n-PbCdSe semiconductor (SC) films on FTO substrate from the respective precursors. Self-designed matrices were formulated at variable concentrations of Pb²⁺ in the deposition medium. The semiconductor films constitute an intermixed structure of close-packed PbSe and CdSe nanoparticles (NPs), and the band gap (E_g) was effectively tuned in the range 0.99-1.47 eV for the variable compositions. Energy dispersive spectroscopy studies revealed that Cd exists in low level in the film matrix compared to Pb, presumably due to competitive deposition kinetics of the two chalcogenide compounds and the crystallite sizes determined from XRD studies, ranges between 15 and 12 nm, which corresponds to the size quenching of SC-NPs with increased Pb²⁺ concentration. The durability studies identify the most stable film developed at 0.025 M Pb²⁺ concentration. PbSe materials are typically characterized with impact ionization which effectively induces carrier multiplication (CM) in the quasi Type-II PbCdSe composite, exhibiting reasonably high photoconversion efficiency (PCE) of 6.14% with current output of 19.2 mA cm^-2 for the optimal PbCdSe film.

Enhanced Broadband Electromagnetic Absorption in Silicon Film with Photonic Crystal Surface and Random Gold Grooves Reflector

We show a hybrid structure consisting of Si film with photonic crystal surface and random triangular gold grooves reflector at the bottom, which is capable of realizing efficient, broad-band, wide-angle optical absorption. It is numerically demonstrated that the enhanced absorption in a broad wavelength range (0.3–9.9 μm) due to the scattering effect of both sides of the structure and the created resonance modes. Larger thickness and period are favored to enhance the absorption in broader wavelength range. Substantial electric field concentrates in the grooves of surface photonic crystal and in the Si film. Our structure is versatile for solar cells, broadband photodetection and stealth coating.

Optical and structural properties of amorphous SexTe100-x aligned nanorods

In the present work, we report studies on optical and structural phenomenon in as-deposited thin films composed of aligned nanorods of amorphous SexTe100-x (x = 3, 6, 9, and 12). In structural studies, field emission scanning electron microscopic (FESEM) images suggest that these thin films contain high yield of aligned nanorods. These nanorods show a completely amorphous nature, which is verified by X-ray diffraction patterns of these thin films. Optical studies include the measurement of spectral dependence of absorption, reflection, and transmission of these thin films, respectively. On the basis of optical absorption data, a direct optical band gap is observed. This observation of a direct optical band gap in these nanorods is interesting as chalcogenides normally show an indirect band gap, and due to this reason, these materials could not become very popular for semiconducting devices. Therefore, this is an important report and will open up new directions for the application of these materials in semiconducting devices. The value of this optical band gap is found to decrease with the increase in selenium (Se) concentration. The reflection and absorption data are employed to estimate the values of optical constants (extinction coefficient (k) and refractive index (n)). From the spectral dependence of these optical constants, it is found that the values of refractive index (n) increase, whereas the values of extinction coefficient (k) decrease with the increase in photon energy. The real and imaginary parts of dielectric constants calculated with the values of extinction coefficient (k) and refractive index (n), are found to vary with photon energy and dopant concentration.