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Abstract
We report here a systematic study of the growth of aligned WO3 (002)-oriented nanowires (NWs) on a (111)-oriented platinised silicon substrate using a pulsed laser deposition (PLD) method.
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Affiliation(s)
- Ankita Ghatak
- Unit for Nanoscience
- Department of Condensed Matter Physics and Material Sciences
- S.N. Bose National Centre for Basic Sciences
- Kolkata-700098
- India
| | - Samik Roy Moulik
- Unit for Nanoscience
- Department of Condensed Matter Physics and Material Sciences
- S.N. Bose National Centre for Basic Sciences
- Kolkata-700098
- India
| | - Barnali Ghosh
- Unit for Nanoscience
- Department of Condensed Matter Physics and Material Sciences
- S.N. Bose National Centre for Basic Sciences
- Kolkata-700098
- India
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Zhao Y, Li H, Zhu YY, Guan LL, Li YL, Sun J, Ying ZF, Wu JD, Xu N. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires. Nanoscale Res Lett 2014; 9:650. [PMID: 25520597 PMCID: PMC4266518 DOI: 10.1186/1556-276x-9-650] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/08/2014] [Accepted: 11/25/2014] [Indexed: 06/04/2023]
Abstract
UNLABELLED Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.
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Affiliation(s)
- Yu Zhao
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
- Department of Physics, Shanghai Electric Power University, Shanghai 201300, People’s Republic of China
| | - Hui Li
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Yan-Yan Zhu
- Department of Physics, Shanghai Electric Power University, Shanghai 201300, People’s Republic of China
| | - Lei-Lei Guan
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Yan-Li Li
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Jian Sun
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Zhi-Feng Ying
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Jia-Da Wu
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
| | - Ning Xu
- Department of Optical Science and Engineering, Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, People’s Republic of China
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