All-optical XOR and XNOR operations at86.4 Gb/s using a pair of semiconductor optical amplifier Mach-Zehnder interferometers

Cascaded all-optical operations in a hybrid integrated 80-Gb/s logic circuit

We demonstrate logic functionalities in a high-speed all-optical logic circuit based on differential Mach-Zehnder interferometers with semiconductor optical amplifiers as the nonlinear optical elements. The circuit, implemented by hybrid integration of the semiconductor optical amplifiers on a planar lightwave circuit platform fabricated in silica glass, can be flexibly configured to realize a variety of Boolean logic gates. We present both simulations and experimental demonstrations of cascaded all-optical operations for 80-Gb/s on-off keyed data.

The analysis of all-optical logic gates based with tunable femtosecond soliton self-frequency shift

A type of tunable femtosecond soliton logic gate based on fiber Raman Self-Frequency Shift (SFS) is studied in this paper. The Raman SFSs of femtosecond solitons governed by the Newton's cradle mechanism in logic gate are analyzed with an Improved Split-Step Fast Fourier Transform (ISSFFT) algorithm. The impact factors of the solitonic pulse frequency shift and temporal time shift, which are included the Third-Order Dispersion (TOD) effect, are investigated. The existing theoretical equation of SFS is modified into a new expression for this type of soliton logic gate. A lower switching power and the small size of the soliton logic gate device is designed to realize the logic functions of AND, NOT, and XOR. The results demonstrate that the logic gate based on SFS is belonged to the asynchronous system and can be achieved with Milli-Watt switching power and good extinction ratio. ISSFFT is effective and accurately to analyze higher-order dispersive and nonlinear effects in the logic gates.

All-Optical Logic Gates: Designs, Classification, and Comparison

The paper reviews the current status and designs of all-optical gates. Various schemes with and without semiconductor optical amplifiers are discussed and compared. The optical gates are classified according to their design structures. It is divided into two major divisions that is, nonsemiconductor optical amplifier based gates and semiconductor optical amplifier based gates. In nonsemiconductor optical amplifier based gates, different schemes have been proposed to create non-linearity which is discussed. The semiconductor optical amplifier based gates of different design structures are discussed to show the probe pulse that is modulated in different ways to obtain results.

XOR and XNOR operations at 12.5 Gb/s using cascaded carrier-depletion microring resonators

We report the implementation of the XOR and XNOR logical operations using an electro-optic circuit, which is fabricated by CMOS-compatible process in the silicon-on-insulator (SOI) platform. The circuit consists of two cascaded add-drop microring resonators (MRRs), which are modulated through electric-field-induced carrier depletion in reverse biased pn junctions embedded in the ring waveguides. The resonance wavelength mismatch between the two nominally identical MRRs caused by fabrication errors is compensated by thermal tuning. Simultaneous bitwise XOR and XNOR operations of the two electrical modulating signals at the speed of 12.5 Gb/s are demonstrated. And 20 Gb/s XOR operation at one output port of the circuit is achieved. We explain the phenomena that one half of the resonance regions of the device are much more sensitive to the round-trip phase shift in the ring waveguides than the other half resonance regions. Characteristic graphs with logarithmic phase coordinate are proposed to analyze the sensitivity of the demonstrated circuit, as well as several typical integrated optical structures. It is found that our circuit with arbitrary chosen parameters has similar sensitivity to MRRs under the critical coupling.

All-optical technique for modulation format conversion from on-off-keying to alternate-mark-inversion

We propose and numerically investigate for the first time a novel all-optical on-off-keying to alternate-mark-inversion modulation format converter operating at 40 Gbps employing a semiconductor optical amplifier (SOA)-based Mach-Zehnder interferometer (MZI). We demonstrate that this SOA-MZI operates as a pulse subtractor, and in the absence of patterning will produce perfectly phase inverted pulses regardless of the individual SOA phase excursions. We use a comprehensive computer model to illustrate the impact of patterning on the output phase modulation, which is quantified through the definition of the phase compression factor.

Pattern compensation in SOA-based gates

We propose a novel scheme employing complementary data inputs to overcome the patterning normally associated with semiconductor optical amplifier based gates and demonstrate the scheme experimentally at 42.6Gb/s. The scheme not only avoids introducing patterning during switching, but also compensates for much of the patterning present on the input data. A novel gate was developed for the experiment to provide the complementary signals required for the scheme.