Waveguide mode filters fabricated using laser-induced forward transfer

Silver decorated lithium niobat nanostructure by UV activation method for silver-lithium niobate/silicon heterojunction device

Lithium niobite (LiNbO₃) nanostructure were successfully synthesized by chemical bath deposition method (CBD) and then decorated with silver nitrate (AgNO₃) through UV activation method at different immersion durations (5, 15, 25, 35, and 45 s). The silver nanoparticles (AgNPs) effects on the optical and structural properties were studied and analyzed using various scientific devices and technique. X-ray diffraction (XRD) results showed that all the samples have a hexagonal structure with a maximum diffraction peak at the (012), and the existence of silver atoms could be recognized at 2θ = 38.2° which corresponds to the (111) diffraction plane. The optical absorption of nanocomposites depicted the presence of plasma peak related to silver (Ag) at 350 nm. The estimated energy gap from the optical absorption revealed a reduction in the Eg value from (3.97 eV) to (3.59 eV) with the presence of Ag atom. The Photolumincence (PL) peaks were observed at around 355 nm for pure LiNbO₃/Si and 358, 360, 363, 371, 476 nm for different immersion durations respectively, in the visible region of the electromagnetic spectrum. The scanning electron microscopy (SEM) study illustrated that with increasing the immersion time, especially at 45 s, a change in the particle morphology was observed (LiNbO₃ NRs structure). Atomic force microscopy (AFM) displayed that the surface roughness decreases from 80.71 nm for pure sample to 23.02 nm for the decorated sample as the immersion time is increased. FT-IR manifested a noticeable increase in the intensity of the peaks of samples decorated with AgNPs. Raman spectroscopy elucidated that the peaks shifted to higher intensity due to the plasmonic effect of Ag nanoparticles. Ag-LiNbO₃/Si heterojunction nano-devices were fabricated successfully and enhanced the optoelectronic properties in comparison with the pure LiNbO₃/Si heterojunction device.

Liquid crystal doped photopolymer micro-droplets printed by a simple and clean laser-induced forward transfer process

We print a tunable photopolymer (photopolymer dispersed liquid crystal -PDLC), using the laser-induced direct transfer technique without absorber layer, which was a challenge for this technique given the low absorption and high viscosity of PDLC, and which had not been achieved so far to our knowledge. This makes the LIFT printing process faster and cleaner and achieves a high-quality printed droplet (aspheric profile and low roughness). A femtosecond laser was needed to reach sufficiently peak energies to induce nonlinear absorption and eject the polymer onto a substrate. Only a narrow energy window allows the material to be ejected without spattering.

Laser-induced forward transfer for flip-chip packaging of single dies

Flip-chip (FC) packaging is a key technology for realizing high performance, ultra-miniaturized and high-density circuits in the micro-electronics industry. In this technique the chip and/or the substrate is bumped and the two are bonded via these conductive bumps. Many bumping techniques have been developed and intensively investigated since the introduction of the FC technology in 1960(1) such as stencil printing, stud bumping, evaporation and electroless/electroplating2. Despite the progress that these methods have made they all suffer from one or more than one drawbacks that need to be addressed such as cost, complex processing steps, high processing temperatures, manufacturing time and most importantly the lack of flexibility. In this paper, we demonstrate a simple and cost-effective laser-based bump forming technique known as Laser-induced Forward Transfer (LIFT)3. Using the LIFT technique a wide range of bump materials can be printed in a single-step with great flexibility, high speed and accuracy at RT. In addition, LIFT enables the bumping and bonding down to chip-scale, which is critical for fabricating ultra-miniature circuitry.

Fabrication of three-dimensional plasmonic cavity by femtosecond laser-induced forward transfer

We fabricated a three-dimensional five-layered plasmonic resonant cavity by low-cost, efficient and high-throughput femtosecond laser-induced forward transfer (fs-LIFT) technique. The fabricated cavity was characterized by optical measurements, showing two different cavity modes within the measured wavelength region which is in good agreement with numerical simulations. The mode volume corresponding to each resonance is found to be squeezed over 10(4) smaller than the cube of incident wavelength. This property may facilitate many applications in integrated optics, optical nonlinearities, and luminescence enhancement, etc.