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Yulianto N, Refino AD, Syring A, Majid N, Mariana S, Schnell P, Wahyuono RA, Triyana K, Meierhofer F, Daum W, Abdi FF, Voss T, Wasisto HS, Waag A. Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique. Microsyst Nanoeng 2021; 7:32. [PMID: 34567746 PMCID: PMC8433433 DOI: 10.1038/s41378-021-00257-y] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 02/24/2021] [Accepted: 02/24/2021] [Indexed: 05/31/2023]
Abstract
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top-down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required).
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Affiliation(s)
- Nursidik Yulianto
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
- Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek No. 441-442, Tangerang, Selatan 15314 Indonesia
| | - Andam Deatama Refino
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
- Engineering Physics Program, Institut Teknologi Sumatera (ITERA), Jl. Terusan Ryacudu, Way Huwi, Lampung Selatan, Lampung 35365 Indonesia
| | - Alina Syring
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Nurhalis Majid
- Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek No. 441-442, Tangerang, Selatan 15314 Indonesia
- Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld, 38678 Germany
| | - Shinta Mariana
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Patrick Schnell
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109 Germany
| | - Ruri Agung Wahyuono
- Department of Engineering Physics, Institut Teknologi Sepuluh Nopember (ITS), Jl. Arif Rahman Hakim, ITS Campus Sukolilo, Surabaya, 60111 Indonesia
| | - Kuwat Triyana
- Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara PO Box BLS 21, Yogyakarta, 55281 Indonesia
| | - Florian Meierhofer
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Winfried Daum
- Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld, 38678 Germany
| | - Fatwa F. Abdi
- Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109 Germany
| | - Tobias Voss
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Hutomo Suryo Wasisto
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
| | - Andreas Waag
- Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106 Germany
- Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106 Germany
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Gong Z. Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review. Nanomaterials (Basel) 2021; 11:842. [PMID: 33806237 PMCID: PMC8065746 DOI: 10.3390/nano11040842] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 03/16/2021] [Accepted: 03/22/2021] [Indexed: 02/07/2023]
Abstract
Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.
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Affiliation(s)
- Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China;
- Foshan Debao Display Technology Co Ltd., Room 508-1, Level 5, Block A, Golden Valley Optoelectronics, Nanhai District, Foshan 528200, China
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