|
1
|
Chen CY, Kanicki J. Influence Of The Density of States and Series Resistance on the Field-Effect Activation Energy in a-Si:H TFT. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-424-77] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractWe have proposed a new two-dimensional simulation model, which takes into account the density of states of hydrogenated amorphous silicon (a-Si:H) and temperature-dependence of the source/drain series resistances (Rs), to explain the dependence of the activation energy (Eact) of drain-source current (IDs) on gate-source bias (VGs) in a-Si:H thin-film transistors (TFTs). We found that the influence of series resistance cannot be ignored, else an overestimated Eact will result. The results of our simulation are in agreement with experimentally observed saturation of the Eact at higher VGs.
Collapse
|
|
2
|
Gomes HL, Stallinga P, Dinelli F, Murgia M, Biscarini F, de Leeuw DM, Muccini M, Müllen K. Electrical characterization of organic based transistors: stability issues. POLYM ADVAN TECHNOL 2005. [DOI: 10.1002/pat.558] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
|