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An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-493-9] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTWe have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.
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Structural, microstructural, optical and dielectric properties of Ba0.75Sr0 25TiO3 thin films deposited by sol-gel. ACTA ACUST UNITED AC 2009. [DOI: 10.1080/13642810008208588] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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