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Ren F, Abernathy CR, Van Hove JM, Chow PP, Hickman R, Klaasen JJ, Kopf RF, Cho H, Jung KB, La Roche JR, Wilson RG, Han J, Shul RJ, Baca AG, Pearton S. 300°C GaN/AlGaN Heterojunction Bipolar Transistor. ACTA ACUST UNITED AC 2014. [DOI: 10.1557/s1092578300001137] [Citation(s) in RCA: 69] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
A GaN/AlGaN heterojunction bipolar transistor has been fabricated using Cl2/Ar dry etching for mesa formation. As the hole concentration increases due to more efficient ionization of the Mg acceptors at elevated temperatures (> 250°C), the device shows improved gain. Future efforts should focus on methods for reducing base resistance, which are briefly summarized.
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Karpov SY, Prokofyev VG, Yakovlev EV, Talalaev RA, Makarov YN. Novel approach to simulation of group-III nitrides growth by MOVPE. ACTA ACUST UNITED AC 2014. [DOI: 10.1557/s1092578300000600] [Citation(s) in RCA: 64] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
Recent studies revealed specific features of chemical processes occurring on the surface of growing group-III nitrides – extremely low sticking probability of molecular nitrogen, low sticking coefficient and incomplete decomposition of ammonia frequently used as the nitrogen precursor. These features (kinetic by nature) result in the growth process going on under conditions remarkably deviated from the gas-solid heterogeneous equilibrium. In this paper we propose a novel approach to modeling of group-III nitride growth by MOVPE taking into account these features. In the model the sticking/evaporation coefficients of N2 and NH3 extracted from independent experiments are used allowing adequate description of the kinetic effects. The model is applied to analysis of growth of binary (GaN) and ternary (InGaN) compounds in a horizontal tube reactor. The growth rate and the solid phase composition are predicted theoretically and compared with available experimental data. The modeling results reveal lower ammonia decomposition ratio on the surface of the crystal as compared to thermodynamic expectations. The developed model can be used for optimization of growth process conditions.
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Hong M, Anselm KA, Kwo J, Ng HM, Baillargeon JN, Kortan AR, Mannaerts JP, Cho AY, Lee CM, Chyi JI, Lay TS. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes. ACTA ACUST UNITED AC 2000; 18:1453. [DOI: 10.1116/1.591402] [Citation(s) in RCA: 56] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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