Copper Nitride Nanowire Arrays-Comparison of Synthetic Approaches

Effect of Argon on the Properties of Copper Nitride Fabricated by Magnetron Sputtering for the Next Generation of Solar Absorbers

Copper nitride, a metastable semiconductor material with high stability at room temperature, is attracting considerable attention as a potential next-generation earth-abundant thin-film solar absorber. Moreover, its non-toxicity makes it an interesting eco-friendly material. In this work, copper nitride films were fabricated using reactive radio frequency (RF) magnetron sputtering at room temperature, 50 W of RF power, and partial nitrogen pressures of 0.8 and 1.0 on glass and silicon substrates. The role of argon in both the microstructure and the optoelectronic properties of the films was investigated with the aim of achieving a low-cost absorber material with suitable properties to replace the conventional silicon in solar cells. The results showed a change in the preferential orientation from (100) to (111) planes when argon was introduced in the sputtering process. Additionally, no structural changes were observed in the films deposited in a pure nitrogen environment. Fourier transform infrared (FTIR) spectroscopy measurements confirmed the presence of Cu-N bonds, regardless of the gas environment used, and XPS indicated that the material was mainly N-rich. Finally, optical properties such as band gap energy and refractive index were assessed to establish the capability of this material as a solar absorber. The direct and indirect band gap energies were evaluated and found to be in the range of 1.70-1.90 eV and 1.05-1.65 eV, respectively, highlighting a slight blue shift when the films were deposited in the mixed gaseous environment as the total pressure increased.

Surveying the Synthesis, Optical Properties and Photocatalytic Activity of Cu3N Nanomaterials

This review addresses the most recent advances in the synthesis approaches, fundamental properties and photocatalytic activity of Cu₃N nanostructures. Herein, the effect of synthesis conditions, such as solvent, temperature, time and precursor on the precipitation of Cu₃N and the formation of secondary phases of Cu and Cu₂O are surveyed, with emphasis on shape and size control. Furthermore, Cu₃N nanostructures possess excellent optical properties, including a narrow bandgap in the range of 0.2 eV–2 eV for visible light absorption. In that regard, understanding the effect of the electronic structure on the bandgap and on the optical properties of Cu₃N is therefore of interest. In fact, the density of states in the d-band of Cu has an influence on the band gap of Cu₃N. Moreover, the potential of Cu₃N nanomaterials for photocatalytic dye-degradation originates from the presence of active sites, i.e., Cu and N vacancies on the surface of the nanoparticles. Plasmonic nanoparticles tend to enhance the efficiency of photocatalytic dye degradation of Cu₃N. Nevertheless, combining them with other potent photocatalysts, such as TiO₂ and MoS_2, augments the efficiency to 99%. Finally, the review concludes with perspectives and future research opportunities for Cu₃N-based nanostructures.

Solution/Ammonolysis Syntheses of Unsupported and Silica-Supported Copper(I) Nitride Nanostructures from Oxidic Precursors

Herein we describe an alternative strategy to achieve the preparation of nanoscale Cu3N. Copper(II) oxide/hydroxide nanopowder precursors were successfully fabricated by solution methods. Ammonolysis of the oxidic precursors can be achieved essentially pseudomorphically to produce either unsupported or supported nanoparticles of the nitride. Hence, Cu3N particles with diverse morphologies were synthesized from oxygen-containing precursors in two-step processes combining solvothermal and solid-gas ammonolysis stages. The single-phase hydroxochloride precursor, Cu2(OH)3Cl was prepared by solution-state synthesis from CuCl2·2H2O and urea, crystallising with the atacamite structure. Alternative precursors, CuO and Cu(OH)2, were obtained after subsequent treatment of Cu2(OH)3Cl with NaOH solution. Cu3N, in the form of micro- and nanorods, was the sole product formed from ammonolysis using either CuO or Cu(OH)2. Conversely, the ammonolysis of dicopper trihydroxide chloride resulted in two-phase mixtures of Cu3N and the monoamine, Cu(NH3)Cl under similar experimental conditions. Importantly, this pathway is applicable to afford composite materials by incorporating substrates or matrices that are resistant to ammoniation at relatively low temperatures (ca. 300 °C). We present preliminary evidence that Cu3N/SiO2 nanocomposites (up to ca. 5 wt.% Cu3N supported on SiO2) could be prepared from CuCl2·2H2O and urea starting materials following similar reaction steps. Evidence suggests that in this case Cu3N nanoparticles are confined within the porous SiO2 matrix.