Enhancing the thermoelectric power factor of nanostructured ZnCo2O4 by Bi substitution

Bi_xZnCo_2−xO₄ (0 ≤ x ≤ 0.2) nanoparticles with different x values have been prepared by the sol–gel method; the structural, morphological, thermal and thermoelectric properties of the prepared nanomaterials are investigated. XRD analysis confirms that Bi is completely dissolved in the ZnCo₂O₄ lattice till the x values of ≤0.1 and the secondary phase of Bi₂O₃ is formed at higher x value (x > 0.1). The synthesized nanomaterials are densified and the thermoelectric properties are studied as a function of temperature. The electrical resistivity of the Bi_xZnCo_2−xO₄ decreased with x value and it fell to 4 × 10⁻² Ω m for the sample with x value ≤ 0.1. The Seebeck coefficient value increased with the increase of Bi substitution till the x value of 0.1 and decreased for the sample with higher Bi content (x ≤ 0.2) as the resistivity of the sample increased due to secondary phase formation. With the optimum Seebeck coefficient and electrical resistivity, Bi_0.1ZnCo_1.9O₄ shows the high-power factor (α²σ_{550 K}) of 2.3 μW K⁻² m⁻¹ and figure of merit of 9.5 × 10⁻⁴ at 668 K respectively, compared with other samples. The experimental results reveal that Bi substitution at the Co site is a promising approach to improve the thermoelectric properties of ZnCo₂O₄.

Nanostructuring and Bi substitution have considerably increased the thermoelectric power factor and ZT of Bi_xZnCo_2−xO₄; Bi_1.9ZnCo_1.9O₄ shows a higher power factor than that of other Bi substituted samples.

Enhancing effects of Te substitution on the thermoelectric power factor of nanostructured SnSe1-xTex

Nanostructured SnSe1-xTex (0 < x < 0.2) was prepared by the planetary ball milling method. The prepared materials were studied by various analytical techniques. XRD analysis shows the pure phase of SnSe when x ≤ 0.1 and the secondary phase of SnTe was observed when x ≥ 0.1, possibly due to the low solid solubility limit of Te in SnSe. FESEM images revealed that the grain sizes of all the samples were in the range of 100 to 500 nm. TEM images showed the grain structures, sizes and grain boundaries of the samples. XPS analysis confirmed the incorporation of Te in SnSe1-xTex and the binding states of the elements in the samples. The samples were made into pellets and sintered at high temperature. The electrical resistivity of the SnSe1-xTex pellets decreased by up to two orders of magnitude as the x value increased in the samples. Concomitantly, the Seebeck coefficient of the SnSe1-xTex samples decreased drastically as the x value increased in the samples. A power factor (PF) of 102.8 μW K-2 m-1 was obtained for the SnSe0.9Te0.1 sample at 550 K, which is higher than the reported values for SnSe and SnSe1-xTex. When substituting Se with Te, the band structure of SnSe changes, which significantly enhances the thermoelectric PF of SnSe1-xTex for x ∼ 0.1. The PF decreased when the x value was increased further (x ≥ 0.1), possibly due to the precipitation of the SnTe phase. These experimental results demonstrate that the addition of a reasonable amount of Te is a promising approach for improving the thermoelectric properties of SnSe.