Band Gap Engineering and Trap Depths of Intrinsic Point Defects in RAlO3 (R = Y, La, Gd, Yb, Lu) Perovskites

The possibility of band gap engineering (BGE) in RAlO₃ (R = Y, La, Gd, Yb, Lu) perovskites in the context of trap depths of intrinsic point defects was investigated comprehensively using experimental and theoretical approaches. The optical band gap of the materials, E _g, was determined via both the absorption measurements in the VUV spectral range and the spectra of recombination luminescence excitation by synchrotron radiation. The experimentally observed effect of E _g reduction from ∼8.5 to ∼5.5 eV in RAlO₃ perovskites with increasing R³⁺ ionic radius was confirmed by the DFT electronic structure calculations performed for RM^IIIO₃ crystals (R = Lu, Y, La; M^III = Al, Ga, In). The possibility of BGE was also proved by the analysis of thermally stimulated luminescence (TSL) measured above room temperature for the far-red emitting (Y/Gd/La)AlO₃:Mn⁴⁺ phosphors, which confirmed decreasing of the trap depths in the cation sequence Y → Gd → La. Calculations of the trap depths performed within the super cell approach for a number of intrinsic point defects and their complexes allowed recognizing specific trapping centers that can be responsible for the observed TSL. In particular, the electron traps of 1.33 and 1.43 eV (in YAlO₃) were considered to be formed by the energy level of oxygen vacancy (V_O) with different arrangement of neighboring Y_Al and V_Y, while shallower electron traps of 0.9-1.0 eV were related to the energy level of Y_Al antisite complexes with neighboring V_O or (V_O + V_Y). The effect of the lowering of electron trap depths in RAlO₃ was demonstrated for the V_O-related level of the (Y_Al + V_O + V_Y) complex defect for the particular case of La substituting Y.

Evidence for the formation of two types of oxygen interstitials in neutron-irradiated α-Al2O3 single crystals

Due to unique optical/mechanical properties and significant resistance to harsh radiation environments, corundum (α-Al₂O₃) is considered as a promising candidate material for windows and diagnostics in forthcoming fusion reactors. However, its properties are affected by radiation-induced (predominantly, by fast neutrons) structural defects. In this paper, we analyze thermal stability and recombination kinetics of primary Frenkel defects in anion sublattice − the F-type electronic centers and complementary oxygen interstitials in fast-neutron-irradiated corundum single crystals. Combining precisely measured thermal annealing kinetics for four types of primary radiation defects (neutral and charged Frenkel pairs) and the advanced model of chemical reactions, we have demonstrated for the first time a co-existence of the two types of interstitial defects – neutral O atoms and negatively charged O^- ions (with attributed optical absorption bands peaked at energies of 6.5 eV and 5.6 eV, respectively). From detailed analysis of interrelated kinetics of four oxygen-related defects, we extracted their diffusion parameters (interstitials serve as mobile recombination partners) required for the future prediction of secondary defect-induced reactions and, eventually, material radiation tolerance.

Distinctive features of diffusion-controlled radiation defect recombination in stoichiometric magnesium aluminate spinel single crystals and transparent polycrystalline ceramics

MgAl₂O₄ spinel is important optical material for harsh radiation environment and other important applications. The kinetics of thermal annealing of the basic electron (F, F⁺) and hole (V) centers in stoichiometric MgAl₂O₄ spinel irradiated by fast neutrons and protons is analyzed in terms of diffusion-controlled bimolecular reactions. Properties of MgAl₂O₄ single crystals and optical polycrystalline ceramics are compared. It is demonstrated that both transparent ceramics and single crystals, as well as different types of irradiation show qualitatively similar kinetics, but the effective migration energy E_a and pre-exponent D₀ are strongly correlated. Such correlation is discussed in terms of the so-called Meyer-Neldel rule known in chemical kinetics of condensed matter. The results for the irradiated spinel are compared with those for sapphire, MgO and other radiation-resistant materials.

Thermoluminescence centres created selectively in MgO crystals by fast neutrons

A possibility of using the thermoluminescent detection of collision-created interstitial centres in MgO by the TL peak at 700 K, arising at the radiative recombination of anion interstitials with F+ centres, for the selective detection of fast neutrons in mixed neutron-gamma fields, is examined. Selectivity and sensitivity of such a detector are discussed. For the present time, the sensitivity of the thermoluminescent detection of anion interstitials created by neutron irradiation is comparable to that of the EPR detection of F+ centres, the main limitations of the thermoluminescence method being connected with the background thermoluminescence and absence of suitable luminescence centres in this temperature region, when undoped and untreated MgO crystals are used. Possible ways to overcome these shortcomings are discussed.