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Shekhirev M, Lipatov A, Torres A, Vorobeva NS, Harkleroad A, Lashkov A, Sysoev V, Sinitskii A. Highly Selective Gas Sensors Based on Graphene Nanoribbons Grown by Chemical Vapor Deposition. ACS Appl Mater Interfaces 2020; 12:7392-7402. [PMID: 32011111 DOI: 10.1021/acsami.9b13946] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Despite the recent advances in bottom-up synthesis of different kinds of atomically precise graphene nanoribbons (GNRs) with very diverse physical properties, the translation of these GNRs into electronic devices remains challenging. Among other factors, the electronic characterization of GNRs is hampered by their complex synthesis that often requires custom-made organic precursors and the need for their transfer to dielectric substrates compatible with the conventional device fabrication procedures. In this paper, we demonstrate that uniform electrically conductive GNR films can be grown on arbitrary high-temperature-resistant substrates, such as metals, Si/SiO2, or silica glasses, by a simple chemical vapor deposition (CVD) approach based on thermal decomposition of commercially available perylenetetracarboxylic dianhydride molecules. The results of spectroscopic and microscopic characterization of the CVD-grown films were consistent with the formation of oxygen-terminated N = 5 armchair GNRs. The CVD-grown nanoribbon films exhibited an ambipolar electric field effect and low on-off ratios, which were in agreement with the predicted metallic properties of N = 5 armchair GNRs, and remarkable gas sensing properties to a variety of volatile organic compounds (VOCs). We fabricated a GNR-based electronic nose system that could reliably recognize VOCs from different chemical classes including alcohols (methanol, ethanol, and isopropanol) and amines (n-butylamine, diethylamine, and triethylamine). The simplicity of the described CVD approach and its compatibility with the conventional device fabrication procedures, as well as the demonstrated sensitivity of the GNR devices to a variety of VOCs, warrant further investigation of CVD-grown nanoribbons for sensing applications.
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Affiliation(s)
- Mikhail Shekhirev
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Alexey Lipatov
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Angel Torres
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Nataliia S Vorobeva
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Ashley Harkleroad
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
| | - Andrey Lashkov
- Department of Physics , Yuri Gagarin State Technical University , Saratov , 410054 , Russia
| | - Victor Sysoev
- Department of Physics , Yuri Gagarin State Technical University , Saratov , 410054 , Russia
- National University of Science and Technology "MISiS" , Moscow 119991 , Russia
| | - Alexander Sinitskii
- Department of Chemistry , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
- Nebraska Center for Materials and Nanoscience , University of Nebraska-Lincoln , Lincoln , Nebraska 68588 , United States
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Mehdi Pour M, Lashkov A, Radocea A, Liu X, Sun T, Lipatov A, Korlacki RA, Shekhirev M, Aluru NR, Lyding JW, Sysoev V, Sinitskii A. Laterally extended atomically precise graphene nanoribbons with improved electrical conductivity for efficient gas sensing. Nat Commun 2017; 8:820. [PMID: 29018185 PMCID: PMC5635063 DOI: 10.1038/s41467-017-00692-4] [Citation(s) in RCA: 63] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2017] [Accepted: 07/20/2017] [Indexed: 11/18/2022] Open
Abstract
Narrow atomically precise graphene nanoribbons hold great promise for electronic and optoelectronic applications, but the previously demonstrated nanoribbon-based devices typically suffer from low currents and mobilities. In this study, we explored the idea of lateral extension of graphene nanoribbons for improving their electrical conductivity. We started with a conventional chevron graphene nanoribbon, and designed its laterally extended variant. We synthesized these new graphene nanoribbons in solution and found that the lateral extension results in decrease of their electronic bandgap and improvement in the electrical conductivity of nanoribbon-based thin films. These films were employed in gas sensors and an electronic nose system, which showed improved responsivities to low molecular weight alcohols compared to similar sensors based on benchmark graphitic materials, such as graphene and reduced graphene oxide, and a reliable analyte recognition. This study shows the methodology for designing new atomically precise graphene nanoribbons with improved properties, their bottom-up synthesis, characterization, processing and implementation in electronic devices. Atomically precise graphene nanoribbons are a promising platform for tailored electron transport, yet they suffer from low conductivity. Here, the authors devise a strategy to laterally extend conventional chevron nanoribbons, thus achieving increased electrical conductivity and improved chemical sensing capabilities.
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Affiliation(s)
- Mohammad Mehdi Pour
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA
| | - Andrey Lashkov
- Department of Physics, Gagarin State Technical University of Saratov, Saratov, 410054, Russia
| | - Adrian Radocea
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.,Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA
| | - Ximeng Liu
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.,Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA
| | - Tao Sun
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.,Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA
| | - Alexey Lipatov
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA
| | - Rafal A Korlacki
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA
| | - Mikhail Shekhirev
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA
| | - Narayana R Aluru
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.,Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA
| | - Joseph W Lyding
- Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA.,Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, 61801, USA
| | - Victor Sysoev
- Department of Physics, Gagarin State Technical University of Saratov, Saratov, 410054, Russia.,National University of Science and Technology MISIS, Moscow, 119991, Russia
| | - Alexander Sinitskii
- Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA. .,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588, USA.
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Fedorov F, Vasilkov M, Lashkov A, Varezhnikov A, Fuchs D, Kübel C, Bruns M, Sommer M, Sysoev V. Toward new gas-analytical multisensor chips based on titanium oxide nanotube array. Sci Rep 2017; 7:9732. [PMID: 28852172 PMCID: PMC5575241 DOI: 10.1038/s41598-017-10495-8] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/03/2017] [Accepted: 08/10/2017] [Indexed: 11/09/2022] Open
Abstract
Reliable environmental monitoring requires cost effective but highly sensitive and selective gas sensors. While the sensitivity of the sensors is improved by reducing the characteristic dimensions of the gas-sensing material, the selectivity is often approached by combining the sensors into multisensor arrays. The development of scalable methods to manufacture such arrays based on low-dimensional structures offers new perspectives for gas sensing applications. Here we examine an approach to produce multisensor array chips based on the TiOx nanotube layers segmented by multiple Pt strip electrodes. We study the sensitivity and selectivity of the developed chip at operating temperatures up to 400 °C towards organic vapors in the ppm range. The results indicate that the titania nanotubes are a promising material platform for novel cost-effective and powerful gas-analytical multisensor units.
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Affiliation(s)
- Fedor Fedorov
- Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel str., Moscow, Russian Federation.
| | - Michail Vasilkov
- V. A. Kotel'nikov Institute of RadioEngineering and Electronics of Russian Academy of Science, Saratov Branch, 38 Zelenaya str., Saratov, Russian Federation
- Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov, Russian Federation
| | - Andrey Lashkov
- Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov, Russian Federation
| | - Alexey Varezhnikov
- Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov, Russian Federation
| | - Dirk Fuchs
- Institute for Solid-State Physics, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, Germany
| | - Christian Kübel
- Institute of Nanotechnology and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, Germany
| | - Michael Bruns
- Institute for Applied Materials and Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, Germany
| | - Martin Sommer
- Institute for Microstructure Technology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, Eggenstein-Leopoldshafen, Germany
| | - Victor Sysoev
- Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov, Russian Federation.
- Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology "MISIS", Leninskiy pr. 4, Moscow, Russia.
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Fedorov FS, Podgainov D, Varezhnikov A, Lashkov A, Gorshenkov M, Burmistrov I, Sommer M, Sysoev V. The Potentiodynamic Bottom-up Growth of the Tin Oxide Nanostructured Layer for Gas-Analytical Multisensor Array Chips. Sensors (Basel) 2017; 17:E1908. [PMID: 28820490 PMCID: PMC5579809 DOI: 10.3390/s17081908] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2017] [Revised: 08/07/2017] [Accepted: 08/10/2017] [Indexed: 11/18/2022]
Abstract
We report a deposition of the tin oxide/hydroxide nanostructured layer by the potentiodynamic method from acidic nitrate solutions directly over the substrate, equipped with multiple strip electrodes which is employed as a gas-analytical multisensor array chip. The electrochemical synthesis is set to favor the growth of the tin oxide/hydroxide phase, while the appearance of metallic Sn is suppressed by cycling. The as-synthesized tin oxide/hydroxide layer is characterized by mesoporous morphology with grains, 250-300 nm diameter, which are further crystallized into fine SnO₂ poly-nanocrystals following heating to 300 °C for 24 h just on the chip. The fabricated layer exhibits chemiresistive properties under exposure to organic vapors, which allows the generation of a multisensor vector signal capable of selectively distinguishing various vapors.
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Affiliation(s)
- Fedor S Fedorov
- Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel Str., 143026 Moscow, Russia.
| | - Dmitry Podgainov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.
| | - Alexey Varezhnikov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.
| | - Andrey Lashkov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.
| | - Michail Gorshenkov
- National University of Science and Technology MISiS, 4 Leninskiy pr., 119991 Moscow, Russia.
| | - Igor Burmistrov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.
- National University of Science and Technology MISiS, 4 Leninskiy pr., 119991 Moscow, Russia.
| | - Martin Sommer
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 1 Hermann-von-Helmholtz Platz, 76344 Eggenstein-Leopoldshafen, Germany.
| | - Victor Sysoev
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., 410054 Saratov, Russia.
- National University of Science and Technology MISiS, 4 Leninskiy pr., 119991 Moscow, Russia.
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