1
|
Mallet N, Müller J, Pezard J, Cristiano F, Makarem R, Fazzini PF, Lecestre A, Larrieu G. Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds. ACS Appl Mater Interfaces 2024; 16:2449-2456. [PMID: 38117013 DOI: 10.1021/acsami.3c09689] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
GaAs nanowires are promising candidates for emerging devices in a broad field of applications (e.g., nanoelectronics, photodetection, or photoconversion). These nanostructures benefit greatly from a vertical integration, as it allows for the exhibition of the entire nanowire surface. However, one of the main challenges related to vertical integration is the conception of an efficient method to create low resistive contacts at nanoscale without degrading the device performance. In this article, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible approach to form alloyed contacts at the extremities of vertical GaAs nanowires. Ni-based and Pd-based alloys on different vertical GaAs nanostructures have been characterized by structural and chemical analyses to identify the phase and to study the growth mechanisms involved at the nanoscale. It is shown that the formation of the Ni3GaAs alloy on top of nanowires following the epitaxial relation Ni3GaAs(0001)∥GaAs(111) leads to a pyramidal shape with four faces. Finally, guidelines are presented to tune the shape of this alloy by varying the initial metal thickness and nanowire diameters. It will facilitate the fabrication of a nanoalloy structure with tailored shape characteristics to precisely align with a designated application.
Collapse
Affiliation(s)
- Nicolas Mallet
- LAAS-CNRS, University of Toulouse, CNRS, Toulouse 31031, France
| | - Jonas Müller
- LAAS-CNRS, University of Toulouse, CNRS, Toulouse 31031, France
| | - Julien Pezard
- LAAS-CNRS, University of Toulouse, CNRS, Toulouse 31031, France
| | | | - Raghda Makarem
- LPCNO, INSA Toulouse, CNRS, University of Toulouse, Toulouse 31077, France
| | | | | | - Guilhem Larrieu
- LAAS-CNRS, University of Toulouse, CNRS, Toulouse 31031, France
| |
Collapse
|
2
|
Müller J, Lecestre A, Demoulin R, Cristiano F, Hartmann JM, Larrieu G. Engineering of dense arrays of Vertical Si 1-xGe xnanostructures. Nanotechnology 2022; 34:105303. [PMID: 36399779 DOI: 10.1088/1361-6528/aca419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 11/18/2022] [Indexed: 06/16/2023]
Abstract
Vertical nanostructure technologies are becoming more important for the down scaling of nanoelectronic devices such as logic transistors or memories. Such devices require dense vertical nanostructured channel arrays (VNCA) that can be fabricated through a top-down approach based on group IV materials. We present progresses on the top-down fabrication of highly anisotropic and ultra-dense Si1-xGex(x= 0, 0.2, 0.5) VNCAs. Dense nanowire and nanosheet patterns were optimized through high resolution lithography and transferred onto Si1-xGexsubstrates by anisotropic reactive ion etching with a fluorine chemistry. The right gas mixtures for a given Ge content resulted in perfectly vertical and dense arrays. Finally we fabricated oxide shell/SiGe core heterostructures by dry- and wet-thermal oxidation and evaluated their applicability for nanostructure size engineering, as already established for silicon nanowires. The impact of the nanostructured shape (wire or sheet), size and Ge content on the oxide growth were investigated and analysed in detail through transmission electron microscopy.
Collapse
Affiliation(s)
- J Müller
- LAAS-CNRS, CNRS, Université de Toulouse, INP Toulouse, Toulouse, 31031, France
| | - A Lecestre
- LAAS-CNRS, CNRS, Université de Toulouse, INP Toulouse, Toulouse, 31031, France
| | - R Demoulin
- LAAS-CNRS, CNRS, Université de Toulouse, INP Toulouse, Toulouse, 31031, France
| | - F Cristiano
- LAAS-CNRS, CNRS, Université de Toulouse, INP Toulouse, Toulouse, 31031, France
| | - J-M Hartmann
- CEA, LETI, Université Grenoble Alpes, Grenoble, 38000, France
| | - G Larrieu
- LAAS-CNRS, CNRS, Université de Toulouse, INP Toulouse, Toulouse, 31031, France
| |
Collapse
|
3
|
Sanchez K, Achour B, Coustou A, Lecestre A, Charlot S, Lavayssière M, Lefrançois A, Aubert H, Pons P. Transient Response of Miniature Piezoresistive Pressure Sensor Dedicated to Blast Wave Monitoring. Sensors (Basel) 2022; 22:9571. [PMID: 36559938 PMCID: PMC9785349 DOI: 10.3390/s22249571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 12/01/2022] [Accepted: 12/02/2022] [Indexed: 06/17/2023]
Abstract
Blast waves generated by energetic materials involve very fast time variations in the pressure. One important issue for blast wave metrology is the accurate measurement (typical precision in the range of ±5% or better) of the static overpressure peak. For most near field configurations, this measurement requires ultra-fast sensors with response times lower than a few microseconds. In this paper, we design, model, fabricate and characterize a new ultra-fast sensor using piezo-resistive gauges at the center of a miniaturized and rectangular silicon membrane. When a pressure step of 10 bar is applied to the membrane, the signal delivered to the sensor output presents dampened oscillations, with a resonant frequency of 20.6 MHz and quality factor of 24,700 ns after the arrival of the shock wave. After removing undesirable drifts that appear after 700 ns, we may expect the sensor to have a response time (at ±5%) of 1.2 µs. Consequently, the proposed pressure sensor could be advantageously used for the accurate measurement of static overpressure peaks in blast wave experiments.
Collapse
Affiliation(s)
- Kevin Sanchez
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Bilel Achour
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Anthony Coustou
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Aurélie Lecestre
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Samuel Charlot
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Maylis Lavayssière
- Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Direction des Applications Militaires-(DAM), 46500 Gramat, France
| | - Alexandre Lefrançois
- Commissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Direction des Applications Militaires-(DAM), 46500 Gramat, France
| | - Hervé Aubert
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| | - Patrick Pons
- Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS-CNRS), Centre National de la Recherche Scientifique (CNRS), Institut National Polytechnique de Toulouse (INPT), Université de Toulouse, 7 Avenue du Colonel Roche, 31031 Toulouse, France
| |
Collapse
|
4
|
Flores Esparza SI, Lecestre A, Dubreuil P, Arnoult A, Mlayah A, Monmayrant A, Gauthier-Lafaye O. GaAs membrane PhC lasers threshold reduction using AlGaAs barriers and improved processing. Nanotechnology 2022; 34:015303. [PMID: 36179662 DOI: 10.1088/1361-6528/ac9685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
Active suspended membranes are an ideal test-bench for experimenting with novel laser geometries and principles. We show that adding thin AlGaAs barrier near the top and bottom Air/GaAs interfaces of the membrane significantly reduces the carriers non-radiative recombinations and decreases the threshold of test photonic crystal test lasers. We review the existing literature on photonic crystal membrane fabrication and propose an overview of the significant defects that can be induced by each fabrication step. Finally we propose a complete processing scheme that overcome most of these defects.
Collapse
Affiliation(s)
| | - Aurélie Lecestre
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| | - Pascal Dubreuil
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| | - Alexandre Arnoult
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| | - Adnen Mlayah
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| | - Antoine Monmayrant
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| | - Olivier Gauthier-Lafaye
- LAAS-CNRS, Université de Toulouse, CNRS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
| |
Collapse
|
5
|
Tijunelyte I, Teillet J, Bruand P, Courson R, Lecestre A, Joseph P, Bancaud A. Hybridization-based DNA biosensing with a limit of detection of 4 fM in 30 s using an electrohydrodynamic concentration module fabricated by grayscale lithography. Biomicrofluidics 2022; 16:044111. [PMID: 35992636 PMCID: PMC9385222 DOI: 10.1063/5.0073542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Speeding up and enhancing the performances of nucleic acid biosensing technologies have remained drivers for innovation. Here, we optimize a fluorimetry-based technology for DNA detection based on the concentration of linear targets paired with probes. The concentration module consists of a microfluidic channel with the shape of a funnel in which we monitor a viscoelastic flow and a counter-electrophoretic force. We report that the technology performs better with a target longer than 100 nucleotides (nt) and a probe shorter than 30 nt. We also prove that the control of the funnel geometry in 2.5D using grayscale lithography enhances sensitivity by 100-fold in comparison to chips obtained by conventional photolithography. With these optimized settings, we demonstrate a limit of detection of 4 fM in 30 s and a detection range of more than five decades. This technology hence provides an excellent balance between sensitivity and time to result.
Collapse
Affiliation(s)
- Inga Tijunelyte
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
| | - Jeffrey Teillet
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
| | - Paul Bruand
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
| | - Rémi Courson
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
| | | | - Pierre Joseph
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France
| | | |
Collapse
|
6
|
Lecestre A, Martin M, Cristiano F, Baron T, Larrieu G. Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate. ACS Omega 2022; 7:5836-5843. [PMID: 35224344 PMCID: PMC8867577 DOI: 10.1021/acsomega.1c05876] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Accepted: 01/19/2022] [Indexed: 05/05/2023]
Abstract
Vertical III-V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III-V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs-Si nanowires with an axial heterostructure. Based on a few complementary metal-oxide-semiconductor-compatible fabrication steps, III-V nanowires with a high crystalline quality as well as a uniform diameter (30 nm), morphology, positioning, and orientation were fabricated. In addition, the patterning control of nanowires at the nanoscale was thoroughly characterized by structural and chemical analyses to finely tune the key process parameters. To properly control the morphology of the nanowires during reactive-ion etching (RIE), the balance between the plasma properties and the formation of a protective layer on the nanowire sidewall was studied in detail. Furthermore, high-resolution microscopy analyses were performed to gain a better understanding of the protective layer's composition and to observe the crystalline quality of the nanowires. This approach paves the way for the possible scale-up integration of III-V-based nanowire devices with conventional Si/complementary metal-oxide-semiconductor technology.
Collapse
Affiliation(s)
- Aurélie Lecestre
- LAAS-CNRS, Université de Toulouse, CNRS, INP, Toulouse 31031, France
| | - Mickael Martin
- Univ.
Grenoble Alpes, CNRS, CEA-Leti/Minatec, Grenoble INP, LTM, F-38054 Grenoble, Cedex France
| | | | - Thierry Baron
- Univ.
Grenoble Alpes, CNRS, CEA-Leti/Minatec, Grenoble INP, LTM, F-38054 Grenoble, Cedex France
| | - Guilhem Larrieu
- LAAS-CNRS, Université de Toulouse, CNRS, INP, Toulouse 31031, France
- . Tel: +33 56133 7984
| |
Collapse
|
7
|
Philippe J, Ferry M, Charlot S, Assié S, Lecestre A, Libaude G, Ferrand A, Pons P, Aubert H. Microelectromechanical Transducer to Monitor High-Doses of Nuclear Irradiation. Sensors (Basel) 2021; 21:s21175912. [PMID: 34502802 PMCID: PMC8433841 DOI: 10.3390/s21175912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/26/2021] [Revised: 08/26/2021] [Accepted: 08/27/2021] [Indexed: 11/16/2022]
Abstract
This paper reports the design, fabrication and measured performance of a passive microelectromechanical transducer for the wireless monitoring of high irradiation doses in nuclear environments. The sensing device is composed of a polymer material (high-density polyethylene) sealed inside a cavity. Subjected to ionizing radiation, this material releases various gases, which increases the pressure inside the cavity and deflects a dielectric membrane. From the measurement of the deflection, the variation of the applied pressure can be estimated, and, in turn, the dose may be determined. The microelectromechanical structure can also be used to study and validate the radiolysis properties of the polymer through its gas emission yield factor. Measurement of the dielectric membrane deflection is performed here to validate on the one hand the required airtightness of the cavity exposed to doses about 4 MGy and on the other hand, the functionality of the fabricated dosimeter for doses up to 80 kGy. The selection of appropriate materials for the microelectromechanical device is discussed, and the outgassing properties of the selected high-density polyethylene are analysed. Moreover, the technological fabrication process of the transducer is detailed.
Collapse
Affiliation(s)
- Julien Philippe
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
- Correspondence:
| | - Muriel Ferry
- Université Paris-Saclay, CEA, Service d’Etude du Comportement des Radionucléides, 91191 Gif-sur-Yvette, France;
| | - Samuel Charlot
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| | - Sandrine Assié
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| | - Aurélie Lecestre
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| | - Guillaume Libaude
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| | - André Ferrand
- Institut Clément Ader (ICA), Université de Toulouse, Modeling of Systems and Mechanical Microsystems (MS2M), 31400 Toulouse, France;
| | - Patrick Pons
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| | - Hervé Aubert
- French National Centre for Scientific Research (CNRS), Laboratory for Analysis and Architecture of Systems (LAAS), University of Toulouse, Institut National Polytechnique de Toulouse (INPT), 7 Avenue du Colonel Roche, 31031 Toulouse, France; (S.C.); (S.A.); (A.L.); (G.L.); (P.P.); (H.A.)
| |
Collapse
|
8
|
Patoux A, Agez G, Girard C, Paillard V, Wiecha PR, Lecestre A, Carcenac F, Larrieu G, Arbouet A. Challenges in nanofabrication for efficient optical metasurfaces. Sci Rep 2021; 11:5620. [PMID: 33692391 PMCID: PMC7946922 DOI: 10.1038/s41598-021-84666-z] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Accepted: 02/16/2021] [Indexed: 11/13/2022] Open
Abstract
Optical metasurfaces have raised immense expectations as cheaper and lighter alternatives to bulk optical components. In recent years, novel components combining multiple optical functions have been proposed pushing further the level of requirement on the manufacturing precision of these objects. In this work, we study in details the influence of the most common fabrication errors on the optical response of a metasurface and quantitatively assess the tolerance to fabrication errors based on extensive numerical simulations. We illustrate these results with the design, fabrication and characterization of a silicon nanoresonator-based metasurface that operates as a beam deflector in the near-infrared range.
Collapse
Affiliation(s)
- Adelin Patoux
- CEMES-CNRS, Université de Toulouse, CNRS, Toulouse, France.,LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France.,Airbus Defence and Space, Toulouse, France
| | - Gonzague Agez
- CEMES-CNRS, Université de Toulouse, CNRS, Toulouse, France
| | | | | | - Peter R Wiecha
- LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France
| | | | | | - Guilhem Larrieu
- LAAS-CNRS, Université de Toulouse, CNRS, Toulouse, France. .,LIMMS-CNRS/IIS, Institute of Industrial Science, The University of Tokyo, Tokyo, Japan.
| | - Arnaud Arbouet
- CEMES-CNRS, Université de Toulouse, CNRS, Toulouse, France.
| |
Collapse
|
9
|
Elias M, Dutoya A, Laborde A, Lecestre A, Montis C, Caselli L, Berti D, Lonetti B, Roux C, Joseph P. Microfluidic characterization of biomimetic membrane mechanics with an on-chip micropipette. Micro and Nano Engineering 2020. [DOI: 10.1016/j.mne.2020.100064] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/24/2022]
|
10
|
Wiecha PR, Lecestre A, Mallet N, Larrieu G. Pushing the limits of optical information storage using deep learning. Nat Nanotechnol 2019; 14:237-244. [PMID: 30664755 DOI: 10.1038/s41565-018-0346-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2018] [Accepted: 12/10/2018] [Indexed: 05/10/2023]
Abstract
Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust readout schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is the robustness of the information readout with respect to fabrication errors and experimental noise. Using a machine-learning-based approach in which the scattering spectra are analysed by an artificial neural network, we achieve quasi-error-free readout of sequences of up to 9 bits, encoded in top-down fabricated silicon nanostructures. We demonstrate that probing few wavelengths instead of the entire spectrum is sufficient for robust information retrieval and that the readout can be further simplified, exploiting the RGB values from microscopy images. Our work paves the way towards high-density optical information storage using planar silicon nanostructures, compatible with mass-production-ready complementary metal-oxide-semiconductor technology.
Collapse
Affiliation(s)
| | | | - Nicolas Mallet
- LAAS, Université de Toulouse, CNRS, INP, Toulouse, France
| | | |
Collapse
|
11
|
Wiecha PR, Majorel C, Girard C, Arbouet A, Masenelli B, Boisron O, Lecestre A, Larrieu G, Paillard V, Cuche A. Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures. Appl Opt 2019; 58:1682-1690. [PMID: 30874199 DOI: 10.1364/ao.58.001682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2018] [Accepted: 01/22/2019] [Indexed: 06/09/2023]
Abstract
We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.
Collapse
|
12
|
Wiecha PR, Arbouet A, Girard C, Lecestre A, Larrieu G, Paillard V. Evolutionary multi-objective optimization of colour pixels based on dielectric nanoantennas. Nat Nanotechnol 2017; 12:163-169. [PMID: 27775725 DOI: 10.1038/nnano.2016.224] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2016] [Accepted: 09/16/2016] [Indexed: 06/06/2023]
Abstract
The rational design of photonic nanostructures consists of anticipating their optical response from systematic variations of simple models. This strategy, however, has limited success when multiple objectives are simultaneously targeted, because it requires demanding computational schemes. To this end, evolutionary algorithms can drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, mimicking the process of natural selection. Here, we present a numerical technique that can allow the design of photonic nanostructures with optical properties optimized along several arbitrary objectives. In particular, we combine evolutionary multi-objective algorithms with frequency-domain electrodynamical simulations to optimize the design of colour pixels based on silicon nanostructures that resonate at two user-defined, polarization-dependent wavelengths. The scattering spectra of optimized pixels fabricated by electron-beam lithography show excellent agreement with the targeted objectives. The method is self-adaptive to arbitrary constraints and therefore particularly apt for the design of complex structures within predefined technological limits.
Collapse
Affiliation(s)
- Peter R Wiecha
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Arnaud Arbouet
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Christian Girard
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Aurélie Lecestre
- LAAS-CNRS, Université de Toulouse, CNRS, INP, 7 avenue du Colonel Roche, 31031 Toulouse, France
| | - Guilhem Larrieu
- LAAS-CNRS, Université de Toulouse, CNRS, INP, 7 avenue du Colonel Roche, 31031 Toulouse, France
| | - Vincent Paillard
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| |
Collapse
|
13
|
Wiecha PR, Arbouet A, Girard C, Lecestre A, Larrieu G, Paillard V. Evolutionary multi-objective optimization of colour pixels based on dielectric nanoantennas. Nat Nanotechnol 2017. [PMID: 27775725 DOI: 10.1109/nmdc.2016.7777138] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
The rational design of photonic nanostructures consists of anticipating their optical response from systematic variations of simple models. This strategy, however, has limited success when multiple objectives are simultaneously targeted, because it requires demanding computational schemes. To this end, evolutionary algorithms can drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, mimicking the process of natural selection. Here, we present a numerical technique that can allow the design of photonic nanostructures with optical properties optimized along several arbitrary objectives. In particular, we combine evolutionary multi-objective algorithms with frequency-domain electrodynamical simulations to optimize the design of colour pixels based on silicon nanostructures that resonate at two user-defined, polarization-dependent wavelengths. The scattering spectra of optimized pixels fabricated by electron-beam lithography show excellent agreement with the targeted objectives. The method is self-adaptive to arbitrary constraints and therefore particularly apt for the design of complex structures within predefined technological limits.
Collapse
Affiliation(s)
- Peter R Wiecha
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Arnaud Arbouet
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Christian Girard
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| | - Aurélie Lecestre
- LAAS-CNRS, Université de Toulouse, CNRS, INP, 7 avenue du Colonel Roche, 31031 Toulouse, France
| | - Guilhem Larrieu
- LAAS-CNRS, Université de Toulouse, CNRS, INP, 7 avenue du Colonel Roche, 31031 Toulouse, France
| | - Vincent Paillard
- CEMES-CNRS, Université de Toulouse, CNRS, UPS, 29 rue Jeanne Marvig, 31055 Toulouse, France
| |
Collapse
|
14
|
Oudjedi L, Fiche JB, Abrahamsson S, Mazenq L, Lecestre A, Calmon PF, Cerf A, Nöllmann M. Astigmatic multifocus microscopy enables deep 3D super-resolved imaging. Biomed Opt Express 2016; 7:2163-73. [PMID: 27375935 PMCID: PMC4918573 DOI: 10.1364/boe.7.002163] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2016] [Revised: 02/22/2016] [Accepted: 03/17/2016] [Indexed: 05/15/2023]
Abstract
We have developed a 3D super-resolution microscopy method that enables deep imaging in cells. This technique relies on the effective combination of multifocus microscopy and astigmatic 3D single-molecule localization microscopy. We describe the optical system and the fabrication process of its key element, the multifocus grating. Then, two strategies for localizing emitters with our imaging method are presented and compared with a previously described deep 3D localization algorithm. Finally, we demonstrate the performance of the method by imaging the nuclear envelope of eukaryotic cells reaching a depth of field of ~4µm.
Collapse
Affiliation(s)
- Laura Oudjedi
- Centre de Biochimie Structurale, CNRS UMR5048, INSERM U1054, Université de Montpellier, 29 Rue de Navacelles, 34090 Montpellier, France
| | - Jean-Bernard Fiche
- Centre de Biochimie Structurale, CNRS UMR5048, INSERM U1054, Université de Montpellier, 29 Rue de Navacelles, 34090 Montpellier, France
| | - Sara Abrahamsson
- Lulu and Anthony Wang Laboratory of Neural Circuits and Behavior, The Rockefeller University, New York, NY 10065, USA
| | - Laurent Mazenq
- CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
- Université de Toulouse, LAAS, F-31031 Toulouse, France
| | - Aurélie Lecestre
- CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
- Université de Toulouse, LAAS, F-31031 Toulouse, France
| | - Pierre-François Calmon
- CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
- Université de Toulouse, LAAS, F-31031 Toulouse, France
| | - Aline Cerf
- CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France
- Université de Toulouse, LAAS, F-31031 Toulouse, France
| | - Marcelo Nöllmann
- Centre de Biochimie Structurale, CNRS UMR5048, INSERM U1054, Université de Montpellier, 29 Rue de Navacelles, 34090 Montpellier, France
| |
Collapse
|
15
|
Castagnola V, Descamps E, Lecestre A, Dahan L, Remaud J, Nowak LG, Bergaud C. Parylene-based flexible neural probes with PEDOT coated surface for brain stimulation and recording. Biosens Bioelectron 2014; 67:450-7. [PMID: 25256782 DOI: 10.1016/j.bios.2014.09.004] [Citation(s) in RCA: 95] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2014] [Revised: 08/14/2014] [Accepted: 09/02/2014] [Indexed: 12/01/2022]
Abstract
Implantable neural prosthetics devices offer a promising opportunity for the restoration of lost functions in patients affected by brain or spinal cord injury, by providing the brain with a non-muscular channel able to link machines to the nervous system. Nevertheless current neural microelectrodes suffer from high initial impedance and low charge-transfer capacity because of their small-feature geometry (Abidian et al., 2010; Cui and Zhou, 2007). In this work we have developed PEDOT-modified neural probes based on flexible substrate capable to answer to the three critical requirements for neuroprosthetic device: efficiency, lifetime and biocompatibility. We propose a simple procedure for the fabrication of neural electrodes fully made of Parylene-C, followed by an electropolymerization of the active area with the conductive polymer PEDOT that is shown to greatly enhance the electrical performances of the device. In addition, the biocompatibility and the very high SNR exhibited during signal recording make our device suitable for long-term implantation.
Collapse
Affiliation(s)
- V Castagnola
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; University of Toulouse, LAAS, F-31400 Toulouse, France.
| | - E Descamps
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; University of Toulouse, LAAS, F-31400 Toulouse, France.
| | - A Lecestre
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; University of Toulouse, LAAS, F-31400 Toulouse, France.
| | - L Dahan
- Centre de Recherche sur la Cognition Animale (CRCA), University of Toulouse, France.
| | - J Remaud
- Centre de Recherche sur la Cognition Animale (CRCA), University of Toulouse, France.
| | - L G Nowak
- Centre de Recherche Cerveau et Cognition (CerCo), CNRS, Toulouse, France.
| | - C Bergaud
- CNRS, LAAS, 7 avenue du colonel Roche, F-31400 Toulouse, France; University of Toulouse, LAAS, F-31400 Toulouse, France.
| |
Collapse
|