Ambipolar transport and magneto-resistance crossover in a Mott insulator, Sr2IrO4

Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr₂IrO₄ (SIO) is investigated using ionic liquid gating. The temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the channel resistance and chemical doping. We observe a crossover from high temperature negative to low temperature positive magnetoresistance around  ∼80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is discussed in the light of conduction mechanisms of SIO, especially variable range hopping (VRH), and its relevance to the insulating ground state of SIO.

Ultrafast dynamics of localized magnetic moments in the unconventional Mott insulator Sr2IrO4

We report a time-resolved study of the ultrafast dynamics of the magnetic moments formed by the [Formula: see text] states in Sr2IrO4 by directly probing the localized iridium 5d magnetic state through resonant x-ray diffraction. Using optical pump-hard x-ray probe measurements, two relaxation time scales were determined: a fast fluence-independent relaxation is found to take place on a time scale of 1.5 ps, followed by a slower relaxation on a time scale of 500 ps-1.5 ns.