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Lau CS, Chee JY, Thian D, Kawai H, Deng J, Wong SL, Ooi ZE, Lim YF, Goh KEJ. Author Correction: Carrier control in 2D transition metal dichalcogenides with Al 2O 3 dielectric. Sci Rep 2021; 11:17435. [PMID: 34433840 PMCID: PMC8387481 DOI: 10.1038/s41598-021-96557-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022] Open
Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Jing Yee Chee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Dickson Thian
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Hiroyo Kawai
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore, 138632, Singapore
| | - Jie Deng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Swee Liang Wong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore.,Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore
| | - Zi En Ooi
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Yee-Fun Lim
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore. .,Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.
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Je SG, Thian D, Chen X, Huang L, Jung DH, Chao W, Lee KS, Hong JI, Soumyanarayanan A, Im MY. Targeted Writing and Deleting of Magnetic Skyrmions in Two-Terminal Nanowire Devices. Nano Lett 2021; 21:1253-1259. [PMID: 33481614 DOI: 10.1021/acs.nanolett.0c03686] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Controllable writing and deleting of nanoscale magnetic skyrmions are key requirements for their use as information carriers for next-generation memory and computing technologies. While several schemes have been proposed, they require complex fabrication techniques or precisely tailored electrical inputs, which limits their long-term scalability. Here, we demonstrate an alternative approach for writing and deleting skyrmions using conventional electrical pulses within a simple, two-terminal wire geometry. X-ray microscopy experiments and micromagnetic simulations establish the observed skyrmion creation and annihilation as arising from Joule heating and Oersted field effects of the current pulses, respectively. The unique characteristics of these writing and deleting schemes, such as spatial and temporal selectivity, together with the simplicity of the two-terminal device architecture, provide a flexible and scalable route to the viable applications of skyrmions.
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Affiliation(s)
- Soong-Geun Je
- Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea
- Department of Physics, Chonnam National University, Gwangju 61186, Korea
| | - Dickson Thian
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore
| | - Xiaoye Chen
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore
- Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore
| | - Lisen Huang
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore
- Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore
| | - Dae-Han Jung
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Weilun Chao
- Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ki-Suk Lee
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Jung-Il Hong
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea
| | - Anjan Soumyanarayanan
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research, 138634 Singapore
- Data Storage Institute, Agency for Science, Technology, and Research, 138634 Singapore
- Department of Physics, National University of Singapore, 117551 Singapore
| | - Mi-Young Im
- Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Korea
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Dong Z, Wang T, Chi X, Ho J, Tserkezis C, Yap SLK, Rusydi A, Tjiptoharsono F, Thian D, Mortensen NA, Yang JKW. Ultraviolet Interband Plasmonics With Si Nanostructures. Nano Lett 2019; 19:8040-8048. [PMID: 31560545 DOI: 10.1021/acs.nanolett.9b03243] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.
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Affiliation(s)
- Zhaogang Dong
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
| | - Tao Wang
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices , Soochow University , Suzhou 215123 , Jiangsu , China
| | - Xiao Chi
- Singapore Synchrotron Light Source (SSLS) , National University of Singapore , 5 Research Link , 117603 , Singapore
| | - Jinfa Ho
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
| | - Christos Tserkezis
- Center for Nano Optics , University of Southern Denmark , Campusvej 55 , DK-5230 Odense M , Denmark
| | - Sherry Lee Koon Yap
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
| | - Andrivo Rusydi
- Singapore Synchrotron Light Source (SSLS) , National University of Singapore , 5 Research Link , 117603 , Singapore
- Department of Physics , National University of Singapore , 2 Science Drive 3, 117542 , Singapore
| | - Febiana Tjiptoharsono
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
| | - Dickson Thian
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
| | - N Asger Mortensen
- Center for Nano Optics , University of Southern Denmark , Campusvej 55 , DK-5230 Odense M , Denmark
- Danish Institute for Advanced Study , University of Southern Denmark , Campusvej 55 , DK-5230 Odense M , Denmark
| | - Joel K W Yang
- Institute of Materials Research and Engineering , A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, #08-03 Innovis , 138634 Singapore
- Singapore University of Technology and Design , 8 Somapah Road , 487372 , Singapore
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An J, Usui T, Logar M, Park J, Thian D, Kim S, Kim K, Prinz FB. Plasma processing for crystallization and densification of atomic layer deposition BaTiO3 thin films. ACS Appl Mater Interfaces 2014; 6:10656-10660. [PMID: 24946008 DOI: 10.1021/am502298z] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
High-k, low leakage thin films are crucial components for dynamic random access memory (DRAM) capacitors with high storage density and a long storage lifetime. In this work, we demonstrate a method to increase the dielectric constant and decrease the leakage current density of atomic layer deposited BaTiO3 thin films at low process temperature (250 °C) using postdeposition remote oxygen plasma treatment. The dielectric constant increased from 51 (as-deposited) to 122 (plasma-treated), and the leakage current density decreased by 1 order of magnitude. We ascribe such improvements to the crystallization and densification of the film induced by high-energy ion bombardments on the film surface during the plasma treatment. Plasma-induced crystallization presented in this work may have an immediate impact on fabricating and manufacturing DRAM capacitors due to its simplicity and compatibility with industrial standard thin film processes.
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Affiliation(s)
- Jihwan An
- Department of Mechanical Engineering, ‡Department of Materials Science and Engineering, and §Department of Applied Physics, Stanford University , Stanford, California 94305, United States
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Schmid D, Huang TY, Hazrat S, Dirks R, Hosten O, Quint S, Thian D, Kwiat PG. Adjustable and robust methods for polarization-dependent focusing. Opt Express 2013; 21:15538-15552. [PMID: 23842341 DOI: 10.1364/oe.21.015538] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We present two methods for the precise independent focusing of orthogonal linear polarizations of light at arbitrary relative locations. Our first scheme uses a displaced lens in a polarization Sagnac interferometer to provide adjustable longitudinal and lateral focal displacements via simple geometry; the second uses uniaxial crystals to achieve the same effect in a compact collinear setup. We develop the theoretical applications and limitations of our schemes, and provide experimental confirmation of our calculations.
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Affiliation(s)
- David Schmid
- Department of Physics, University of Illinois at Urbana-Champaign, 1110 W Green St, Urbana, IL 61801, USA.
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