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Corrales-Ureña YR, Schwab F, Ochoa-Martínez E, Benavides-Acevedo M, Vega-Baudrit J, Pereira R, Rischka K, Noeske PLM, Gogos A, Vanhecke D, Rothen-Rutishauser B, Petri-Fink A. Encapsulated salts in velvet worm slime drive its hardening. Sci Rep 2022; 12:19261. [PMID: 36357497 PMCID: PMC9649676 DOI: 10.1038/s41598-022-23523-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Accepted: 11/01/2022] [Indexed: 11/12/2022] Open
Abstract
Slime expelled by velvet worms entraps prey insects within seconds in a hardened biopolymer network that matches the mechanical strength of industrial polymers. While the mechanic stimuli-responsive nature and building blocks of the polymerization are known, it is still unclear how the velvet worms' slime hardens so fast. Here, we investigated the slime for the first time, not only after, but also before expulsion. Further, we investigated the slime's micro- and nanostructures in-depth. Besides the previously reported protein nanoglobules, carbohydrates, and lipids, we discovered abundant encapsulated phosphate and carbonate salts. We also detected CO2 bubbles during the hardening of the slime. These findings, along with further observations, suggest that the encapsulated salts in expelled slime rapidly dissolve and neutralize in a baking-powder-like reaction, which seems to accelerate the drying of the slime. The proteins' conformation and aggregation are thus influenced by shear stress and the salts' neutralization reaction, increasing the slime's pH and ionic strength. These insights into the drying process of the velvet worm's slime demonstrate how naturally evolved polymerizations can unwind in seconds, and could inspire new polymers that are stimuli-responsive or fast-drying under ambient conditions.
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Affiliation(s)
- Yendry Regina Corrales-Ureña
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland ,grid.7704.40000 0001 2297 4381Faculty of Production Engineering, University of Bremen, Am Fallturm 1, 28359 Bremen, Germany
| | - Fabienne Schwab
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland
| | - Efraín Ochoa-Martínez
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland
| | - Miguel Benavides-Acevedo
- National Laboratory of Nanotechnology LANOTEC - National Center of High Technology CeNAT, 1.3 Km North of the United States Embassy, San José, Costa Rica
| | - José Vega-Baudrit
- National Laboratory of Nanotechnology LANOTEC - National Center of High Technology CeNAT, 1.3 Km North of the United States Embassy, San José, Costa Rica ,grid.10729.3d0000 0001 2166 3813School of Chemistry, National University, Heredia, Costa Rica
| | - Reinaldo Pereira
- National Laboratory of Nanotechnology LANOTEC - National Center of High Technology CeNAT, 1.3 Km North of the United States Embassy, San José, Costa Rica
| | - Klaus Rischka
- grid.461617.30000 0004 0494 8413Adhesive Bonding Technology and Surfaces, Fraunhofer Institute for Manufacturing Technology and Advanced Materials IFAM, Wiener Straße 12, 28359 Bremen, Germany
| | - Paul-Ludwig Michael Noeske
- grid.461617.30000 0004 0494 8413Adhesive Bonding Technology and Surfaces, Fraunhofer Institute for Manufacturing Technology and Advanced Materials IFAM, Wiener Straße 12, 28359 Bremen, Germany
| | - Alexander Gogos
- grid.7354.50000 0001 2331 3059EMPA, Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, CH-9014 St. Gallen, Switzerland
| | - Dimitri Vanhecke
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland
| | - Barbara Rothen-Rutishauser
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland
| | - Alke Petri-Fink
- grid.8534.a0000 0004 0478 1713Adolphe Merkle Institute, University of Fribourg, Chemin Des Verdiers 4, 1700 Fribourg, Switzerland ,grid.8534.a0000 0004 0478 1713Department of Chemistry, University of Fribourg, Chemin du Musée 9, CH-1700 Fribourg, Switzerland
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Günzler A, Bermúdez-Ureña E, Muscarella LA, Ochoa M, Ochoa-Martínez E, Ehrler B, Saliba M, Steiner U. Shaping Perovskites: In Situ Crystallization Mechanism of Rapid Thermally Annealed, Prepatterned Perovskite Films. ACS Appl Mater Interfaces 2021; 13:6854-6863. [PMID: 33513304 PMCID: PMC8437338 DOI: 10.1021/acsami.0c20958] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Accepted: 01/13/2021] [Indexed: 06/12/2023]
Abstract
Understanding and controlling the crystallization of organic-inorganic perovskite materials is important for their function in optoelectronic applications. This control is particularly delicate in scalable single-step thermal annealing methods. In this work, the crystallization mechanisms of flash infrared-annealed perovskite films, grown on substrates with lithographically patterned Au nucleation seeds, are investigated. The patterning enables the in situ observation to study the crystallization kinetics and the precise control of the perovskite nucleation and domain growth, while retaining the characteristic polycrystalline micromorphology with larger crystallites at the boundaries of the crystal domains, as shown by electron backscattering diffraction. Time-resolved photoluminescence measurements reveal longer charge carrier lifetimes in regions with large crystallites on the domain boundaries, relative to the domain interior. By increasing the nucleation site density, the proportion of larger crystallites is increased. This study shows that the combination of rapid thermal annealing with nucleation control is a promising approach to improve perovskite crystallinity and thereby ultimately the performance of optoelectronic devices.
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Affiliation(s)
- Antonio Günzler
- Adolphe
Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland
| | - Esteban Bermúdez-Ureña
- Adolphe
Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland
| | - Loreta A. Muscarella
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Mario Ochoa
- Laboratory
for Thin-Films and Photovoltaics, Empa-Swiss
Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland
| | - Efraín Ochoa-Martínez
- Adolphe
Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland
| | - Bruno Ehrler
- Center
for Nanophotonics, AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
| | - Michael Saliba
- Institute
for Photovoltaics (IPV), University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
- Helmholtz
Young Investigator Group FRONTRUNNER, IEK5-Photovoltaik,
Forschungszentrum, Jülich, D-52425 Germany
| | - Ullrich Steiner
- Adolphe
Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland
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Ochoa-Martínez E, Gabás M, Barrutia L, Pesquera A, Centeno A, Palanco S, Zurutuza A, Algora C. Determination of a refractive index and an extinction coefficient of standard production of CVD-graphene. Nanoscale 2015; 7:1491-1500. [PMID: 25504461 DOI: 10.1039/c4nr06119e] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The refractive index and extinction coefficient of chemical vapour deposition grown graphene are determined by ellipsometry analysis. Graphene films were grown on copper substrates and transferred as both monolayers and bilayers onto SiO2/Si substrates by using standard manufacturing procedures. The chemical nature and thickness of residual debris formed after the transfer process were elucidated using photoelectron spectroscopy. The real layered structure so deduced has been used instead of the nominal one as the input in the ellipsometry analysis of monolayer and bilayer graphene, transferred onto both native and thermal silicon oxide. The effect of these contamination layers on the optical properties of the stacked structure is noticeable both in the visible and the ultraviolet spectral regions, thus masking the graphene optical response. Finally, the use of heat treatment under a nitrogen atmosphere of the graphene-based stacked structures, as a method to reduce the water content of the sample, and its effect on the optical response of both graphene and the residual debris layer are presented. The Lorentz-Drude model proposed for the optical response of graphene fits fairly well the experimental ellipsometric data for all the analysed graphene-based stacked structures.
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Affiliation(s)
- Efraín Ochoa-Martínez
- Universidad de Málaga, The Nanotech Unit, Departamento de Física Aplicada I, Campus de Teatinos, 29071 Málaga, Spain.
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Ochoa-Martínez E, Vázquez C, Solís D, Hoces I, Freire I, Jimeno JC, Ramos-Barrado J. Fabrication and characterization of thin silicon solar cells produced by in-line spray coating. RSC Adv 2015. [DOI: 10.1039/c5ra12398d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Orthophosphoric acid spray-coating: a feasible method for pn junction formation on thin c-Si cells with lower cost and environmental impact.
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Affiliation(s)
| | | | - Daniel Solís
- Universidad de Málaga
- The Nanotech Unit
- Depto. de Física Aplicada I
- Spain
| | - Itziar Hoces
- Instituto de Tecnología Microelectrónica (TiM)
- UPV/EHU
- Alda. Urquijo s/n
- 48013 Bilbao
- Spain
| | - Iratxe Freire
- Instituto de Tecnología Microelectrónica (TiM)
- UPV/EHU
- Alda. Urquijo s/n
- 48013 Bilbao
- Spain
| | - Juan Carlos Jimeno
- Instituto de Tecnología Microelectrónica (TiM)
- UPV/EHU
- Alda. Urquijo s/n
- 48013 Bilbao
- Spain
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