Band Dependent Interlayer f-Electron Hybridization in CeRhIn_{5}

A key issue in heavy fermion research is how subtle changes in the hybridization between the 4f (5f) and conduction electrons can result in fundamentally different ground states. CeRhIn_{5} stands out as a particularly notable example: when replacing Rh with either Co or Ir, antiferromagnetism gives way to superconductivity. In this photoemission study of CeRhIn_{5}, we demonstrate that the use of resonant angle-resolved photoemission spectroscopy with polarized light allows us to extract detailed information on the 4f crystal field states and details on the 4f and conduction electron hybridization, which together determine the ground state. We directly observe weakly dispersive Kondo resonances of f electrons and identify two of the three Ce 4f_{5/2}^{1} crystal-electric-field levels and band-dependent hybridization, which signals that the hybridization occurs primarily between the Ce 4f states in the CeIn_{3} layer and two more three-dimensional bands composed of the Rh 4d and In 5p orbitals in the RhIn_{2} layer. Our results allow us to connect the properties observed at elevated temperatures with the unusual low-temperature properties of this enigmatic heavy fermion compound.

Distinct Evolutions of Weyl Fermion Quasiparticles and Fermi Arcs with Bulk Band Topology in Weyl Semimetals

The Weyl semimetal phase is a recently discovered topological quantum state of matter characterized by the presence of topologically protected degeneracies near the Fermi level. These degeneracies are the source of exotic phenomena, including the realization of chiral Weyl fermions as quasiparticles in the bulk and the formation of Fermi arc states on the surfaces. Here, we demonstrate that these two key signatures show distinct evolutions with the bulk band topology by performing angle-resolved photoemission spectroscopy, supported by first-principles calculations, on transition-metal monophosphides. While Weyl fermion quasiparticles exist only when the chemical potential is located between two saddle points of the Weyl cone features, the Fermi arc states extend in a larger energy scale and are robust across the bulk Lifshitz transitions associated with the recombination of two nontrivial Fermi surfaces enclosing one Weyl point into a single trivial Fermi surface enclosing two Weyl points of opposite chirality. Therefore, in some systems (e.g., NbP), topological Fermi arc states are preserved even if Weyl fermion quasiparticles are absent in the bulk. Our findings not only provide insight into the relationship between the exotic physical phenomena and the intrinsic bulk band topology in Weyl semimetals, but also resolve the apparent puzzle of the different magnetotransport properties observed in TaAs, TaP, and NbP, where the Fermi arc states are similar.

Evidence for a Strong Topological Insulator Phase in ZrTe_{5}

The complex electronic properties of ZrTe_{5} have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe_{5}, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe_{5}.

Entanglement and manipulation of the magnetic and spin-orbit order in multiferroic Rashba semiconductors

Entanglement of the spin–orbit and magnetic order in multiferroic materials bears a strong potential for engineering novel electronic and spintronic devices. Here, we explore the electron and spin structure of ferroelectric α-GeTe thin films doped with ferromagnetic Mn impurities to achieve its multiferroic functionality. We use bulk-sensitive soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to follow hybridization of the GeTe valence band with the Mn dopants. We observe a gradual opening of the Zeeman gap in the bulk Rashba bands around the Dirac point with increase of the Mn concentration, indicative of the ferromagnetic order, at persistent Rashba splitting. Furthermore, subtle details regarding the spin–orbit and magnetic order entanglement are deduced from spin-resolved ARPES measurements. We identify antiparallel orientation of the ferroelectric and ferromagnetic polarization, and altering of the Rashba-type spin helicity by magnetic switching. Our experimental results are supported by first-principles calculations of the electron and spin structure.

In α-GeTe, ferroelectric polarization acts to break inversion symmetry of the lattice and induce a strong Rashba-type spin splitting of the electronic band structure. Here, the authors study how this effect competes with Zeeman splitting due to ferromagnetic exchange coupling in Mn-doped GeTe.

NaFe_{0.56}Cu_{0.44}As: A Pnictide Insulating Phase Induced by On-Site Coulomb Interaction

In the studies of iron pnictides, a key question is whether their bad-metal state from which the superconductivity emerges lies in close proximity with a magnetically ordered insulating phase. Recently, it was found that at low temperatures, the heavily Cu-doped NaFe_{1-x}Cu_{x}As (x>0.3) iron pnictide is an insulator with long-range antiferromagnetic order, similar to the parent compound of cuprates but distinct from all other iron pnictides. Using angle-resolved photoemission spectroscopy, we determined the momentum-resolved electronic structure of NaFe_{1-x}Cu_{x}As (x=0.44) and identified that its ground state is a narrow-gap insulator. Combining the experimental results with density functional theory (DFT) and DFT+U calculations, our analysis reveals that the on-site Coulombic (Hubbard) and Hund's coupling energies play crucial roles in the formation of the band gap about the chemical potential. We propose that at finite temperatures, charge carriers are thermally excited from the Cu-As-like valence band into the conduction band, which is of Fe 3d-like character. With increasing temperature, the number of electrons in the conduction band becomes larger and the hopping energy between Fe sites increases, and finally the long-range antiferromagnetic order is destroyed at T>T_{N}. Our study provides a basis for investigating the evolution of the electronic structure of a Mott insulator transforming into a bad metallic phase and eventually forming a superconducting state in iron pnictides.

Fermi states and anisotropy of Brillouin zone scattering in the decagonal Al-Ni-Co quasicrystal

Quasicrystals (QCs) are intermetallic alloys that have excellent long-range order but lack translational symmetry in at least one dimension. The valence band electronic structure near the Fermi energy EF in such materials is of special interest since it has a direct relation to their unusual physical properties. However, the Fermi surface (FS) topology as well as the mechanism of QC structure stabilization are still under debate. Here we report the first observation of the three-dimensional FS and valence band dispersions near EF in decagonal Al70Ni20Co10 (d-AlNiCo) QCs using soft X-ray angle-resolved photoemission spectroscopy. We show that the FS, formed by dispersive Al sp-states, has a multicomponent character due to a large contribution from high-order bands. Moreover, we discover that the magnitude of the gap at the FS related to the interaction with Brillouin zone boundary (Hume-Rothery gap) critically differs for the periodic and quasiperiodic directions.

Few layered MoS2 lithography with an AFM tip: description of the technique and nanospectroscopy investigations

A novel technique to lithograph the MoS2 surface is described here. Mechanically exfoliated MoS2 flakes have been patterned with an atomic force microscope tip. After the patterning process, the lithographed areas have been removed by selective chemical etching. The electronic properties of the MoS2 flakes have been analyzed with spatially resolved photoelectron spectroscopy, with tunable incident photon energy, provided by a synchrotron light source. Tens of meV core level shifts can be recorded in relation to the flakes edges, coming from both the exfoliation and from the lithography.

Unravelling the role of the central metal ion in the electronic structure of tris(8-hydroxyquinoline) metal chelates: photoemission spectroscopy and hybrid functional calculations

The electronic structures of tris(8-hydroxyquinolinato)-erbium(III) (ErQ(3)) and tris(8-hydroxyquinolinato)-aluminum(III) (AlQ(3)) have been studied by means of core level and valence band photoemission spectroscopy with the theoretical support of hybrid Heyd-Scuseria-Ernzerhof density functional theory, to investigate the role played by the central metal atom. A lower binding energy (0.2 eV and 0.3 eV, respectively) of the O 1s and N 1s core levels has been observed for ErQ(3) with respect to AlQ(3). Differences in the valence band spectra, mainly related to the first two peaks next to the highest occupied molecular orbital (HOMO), have been ascribed to an energetic shift (to 0.4 eV lower energies for ErQ(3)) of the σ molecular orbital between the oxygen atoms and the central metal atom. A lower (by 0.5 eV) ionization energy has been measured for the ErQ(3). The interpretation of these results is based on a reduced interaction between the central metal atom and the ligands in ErQ(3), with increased electronic charge around the ligands, due to the higher ionic radius and the lower electronegativity of Er with respect to Al.

Large area extreme-UV lithography of graphene oxide via spatially resolved photoreduction

The ability to pattern graphene over large areas with nanometer resolution is the current request for nanodevice fabrication at the industrial scale. Existing methods do not match high throughput with nanometer resolution. We propose a high-throughput resistless extreme-UV (EUV) photolithographic approach operating with sub-micrometer resolution on large area (~10 mm(2)) graphene oxide (GO) films via spatially resolved photoreduction. The efficiency of EUV photoreduction is tested with 46.9 nm coherent light produced by a table top capillary discharge plasma source. Irradiated samples are studied by X-ray photoemission spectroscopy (XPS) and micro-Raman Spectroscopy (μRS). XPS data show that 200 mJ/cm(2) EUV dose produces, onto pristine GO, a 6% increase of sp(2) carbon bonds and a 20% decrease of C-O bonds. μRS data demonstrate a photoreduction efficiency 2 orders of magnitude higher than the one reported in the literature for UV-assisted photoreduction. GO patterning is obtained modulating the EUV dose with a Lloyd's interferometer. The lithographic features consist of GO stripes with modulated reduction degree. Such modulation is investigated and demonstrated by μRS on patterns with 2 μm periodicity.