Multisensing Wearables for Real-Time Monitoring of Sweat Electrolyte Biomarkers During Exercise and Analysis on Their Correlation With Core Body Temperature

Sweat secreted by the human eccrine sweat glands can provide valuable biomarker information during exercise. Real-time non-invasive biomarker recordings are therefore useful for evaluating the physiological conditions of an athlete such as their hydration status during endurance exercise. This work describes a wearable sweat biomonitoring patch incorporating printed electrochemical sensors into a plastic microfluidic sweat collector and data analysis that shows the real-time recorded sweat biomarkers can be used to predict a physiological biomarker. The system was placed on subjects carrying out an hour-long exercise session and results were compared to a wearable system using potentiometric robust silicon-based sensors and to commercially available HORIBA-LAQUAtwin devices. Both prototypes were applied to the real-time monitoring of sweat during cycling sessions and showed stable readings for around an hour. Analysis of the sweat biomarkers collected from the printed patch prototype shows that their real-time measurements correlate well (correlation coefficient ≥ 0.65) with other physiological biomarkers such as heart rate and regional sweat rate collected in the same session. We show for the first time, that the real-time sweat sodium and potassium concentration biomarker measurements from the printed sensors can be used to predict the core body temperature with root mean square error (RMSE) of 0.02 °C which is 71% lower compared to the use of only the physiological biomarkers. These results show that these wearable patch technologies are promising for real-time portable sweat monitoring analytical platforms, especially for athletes performing endurance exercise.

Ultrasensitive bacterial sensing using a disposable all-in-one amperometric platform with self-noise cancellation

The early detection of very low bacterial concentrations is key to minimize the healthcare and safety issues associated with microbial infections, food poisoning or water pollution. In amperometric integrated circuits for electrochemical sensors, flicker noise is still the main bottleneck to achieve ultrasensitive detection with small footprint, cost-effective and ultra-low power instrumentation. Current strategies rely on autozeroing or chopper stabilization causing negative impacts on chip size and power consumption. This work presents a 27-μW potentiostatic-amperometric Delta-Sigma modulator able to cancel its own flicker noise and provide a 4-fold improvement in the limit of detection. The 2.3-mm² all-in-one CMOS integrated circuit is glued to an inkjet-printed electrochemical sensor. Measurements show that the limit of detection is 15 pA_rms, the extended dynamic range reaches 110 dB and linearity is R² = 0.998. The disposable device is able to detect, in less than 1h, live bacterial concentrations as low as 10² CFU/mL from a 50-μL droplet sample, which is equivalent to 5 microorganisms.

A 1024-Channel 10-Bit 36- μW/ch CMOS ROIC for Multiplexed GFET-Only Sensor Arrays in Brain Mapping

This paper presents a 1024-channel neural read-out integrated circuit (ROIC) for solution-gated GFET sensing probes in massive μECoG brain mapping. The proposed time-domain multiplexing of GFET-only arrays enables low-cost and scalable hybrid headstages. Low-power CMOS circuits are presented for the GFET analog frontend, including a CDS mechanism to improve preamplifier noise figures and 10-bit 10-kS/s A/D conversion. The 1024-channel ROIC has been fabricated in a standard 1.8-V 0.18- μm CMOS technology with 0.012 mm ² and 36 μ W per channel. An automated methodology for the in-situ calibration of each GFET sensor is also proposed. Experimental ROIC tests are reported using a custom FPGA-based μECoG headstage with 16×32 and 32×32 GFET probes in saline solution and agar substrate. Compared to state-of-art neural ROICs, this work achieves the largest scalability in hybrid platforms and it allows the recording of infra-slow neural signals.

A Robust 96.6-dB-SNDR 50-kHz-Bandwidth Switched-Capacitor Delta-Sigma Modulator for IR Imagers in Space Instrumentation

Infrared imaging technology, used both to study deep-space bodies' radiation and environmental changes on Earth, experienced constant improvements in the last few years, pushing data converter designers to face new challenges in terms of speed, power consumption and robustness against extremely harsh operating conditions. This paper presents a 96.6-dB-SNDR (Signal-to-Noise-plus-Distortion Ratio) 50-kHz-bandwidth fourth-order single-bit switched-capacitor delta-sigma modulator for ADC operating at 1.8 V and consuming 7.9 mW fit for space instrumentation. The circuit features novel Class-AB single-stage switched variable-mirror amplifiers (SVMAs) enabling low-power operation, as well as low sensitivity to both process and temperature deviations for the whole modulator. The physical implementation resulted in a 1.8-mm² chip integrated in a standard 0.18-µm 1-poly-6-metal (1P6M) CMOS technology, and it reaches a 164.6-dB Schreier figure of merit from experimental SNDR measurements without making use of any clock bootstrapping,analogcalibration,nordigitalcompensationtechnique. Whencoupledtoa2048×2048 IR imager, the current design allows more than 50 frames per minute with a resolution of 16 effective number of bits (ENOB) while consuming less than 300 mW.

A 70- μ m Pitch 8- μ W Self-Biased Charge-Integration Active Pixel for Digital Mammography

This paper presents a new low-power compact CMOS active pixel circuit specifically optimized for full-field digital mammography. The proposed digital pixel sensor (DPS) architecture includes self-bias capability at ±10% accuracy, up to 15 nA of dark-current autocalibration, built-in test mechanisms, selectable e(-)/h(+) collection, 10-b lossless charge-integration analog-to-digital conversion, more than 1 decade of individual gain tuning for fixed pattern noise cancellation, and a 50-Mb/s digital-only input/output interface. Experimental results for a 70-μm pitch 8-μW DPS cell example are reported in 0.18-μm CMOS 1-polySi 6-metal technology.

Full-wafer fabrication by nanostencil lithography of micro/nanomechanical mass sensors monolithically integrated with CMOS

Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 µm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ∼2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10(-11) g cm(-2) Hz(-1), and their thickness resolution corresponds to approximately a thousandth of a monolayer.