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Eres G, Tischler JZ, Rouleau CM, Lee HN, Christen HM, Zschack P, Larson BC. Dynamic Scaling and Island Growth Kinetics in Pulsed Laser Deposition of SrTiO_{3}. Phys Rev Lett 2016; 117:206102. [PMID: 27886490 DOI: 10.1103/physrevlett.117.206102] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2016] [Indexed: 06/06/2023]
Abstract
We use real-time diffuse surface x-ray diffraction to probe the evolution of island size distributions and its effects on surface smoothing in pulsed laser deposition (PLD) of SrTiO_{3}. We show that the island size evolution obeys dynamic scaling and two distinct regimes of island growth kinetics. Our data show that PLD film growth can persist without roughening despite thermally driven Ostwald ripening, the main mechanism for surface smoothing, being shut down. The absence of roughening is concomitant with decreasing island density, contradicting the prevailing view that increasing island density is the key to surface smoothing in PLD. We also report a previously unobserved crossover from diffusion-limited to attachment-limited island growth that reveals the influence of nonequilibrium atomic level surface transport processes on the growth modes in PLD. We show by direct measurements that attachment-limited island growth is the dominant process in PLD that creates step flowlike behavior or quasistep flow as PLD "self-organizes" local step flow on a length scale consistent with the substrate temperature and PLD parameters.
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Affiliation(s)
- Gyula Eres
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - J Z Tischler
- X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 61801, USA
| | - C M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Ho Nyung Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - H M Christen
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - P Zschack
- X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 61801, USA
- Photon Sciences Division, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - B C Larson
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
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Liu ZQ, Li L, Gai Z, Clarkson JD, Hsu SL, Wong AT, Fan LS, Lin MW, Rouleau CM, Ward TZ, Lee HN, Sefat AS, Christen HM, Ramesh R. Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy. Phys Rev Lett 2016; 116:097203. [PMID: 26991197 DOI: 10.1103/physrevlett.116.097203] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2015] [Indexed: 06/05/2023]
Abstract
We report a giant, ∼22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO_{3} heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein.
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Affiliation(s)
- Z Q Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - L Li
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - Z Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - J D Clarkson
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - S L Hsu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - A T Wong
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
- Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - L S Fan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - M-W Lin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - C M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - T Z Ward
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - H N Lee
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - A S Sefat
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - H M Christen
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
| | - R Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
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Lee Y, Liu ZQ, Heron JT, Clarkson JD, Hong J, Ko C, Biegalski MD, Aschauer U, Hsu SL, Nowakowski ME, Wu J, Christen HM, Salahuddin S, Bokor JB, Spaldin NA, Schlom DG, Ramesh R. Large resistivity modulation in mixed-phase metallic systems. Nat Commun 2015; 6:5959. [DOI: 10.1038/ncomms6959] [Citation(s) in RCA: 145] [Impact Index Per Article: 16.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2014] [Accepted: 11/26/2014] [Indexed: 11/09/2022] Open
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Herklotz A, Biegalski MD, Christen HM, Guo EJ, Nenkov K, Rata AD, Schultz L, Dörr K. Strain response of magnetic order in perovskite-type oxide films. Philos Trans A Math Phys Eng Sci 2014; 372:20120441. [PMID: 24421374 DOI: 10.1098/rsta.2012.0441] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
The role of elastic strain for magnetoelectric materials and devices is twofold. It can induce ferroic orders in thin films of otherwise non-ferroic materials. On the other hand, it provides the most exploited coupling mechanism in two-phase magnetoelectric materials and devices today. Complex oxide films (perovskites, spinels) are promising for both routes. The strain control of magnetic order in complex oxide films is a young research field, and few ab initio simulations are available for magnetic order in dependence on lattice parameters and lattice symmetry. Here, an experimental approach for the evaluation of how elastic strain in thin epitaxial films alters their magnetic order is introduced. The magnetic films are grown epitaxially in strain states controlled by buffer layers onto piezoelectric substrates of 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3(001). As an example, the strain dependence of the ordered magnetic moment of SrRuO3 has been investigated. At a tensile strain level of approximately 1%, SrRuO3 is tetragonal, and biaxial elastic strain induces a pronounced suppression of the ordered magnetic moment. As a second example, a strain-driven transition from a ferromagnetic to a magnetically disordered phase has been observed in epitaxial La0.8Sr0.2CoO3 films.
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Affiliation(s)
- A Herklotz
- Institute for Physics, Martin Luther University Halle-Wittenberg, , Halle 06099, Germany
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Beekman C, Siemons W, Ward TZ, Chi M, Howe J, Biegalski MD, Balke N, Maksymovych P, Farrar AK, Romero JB, Gao P, Pan XQ, Tenne DA, Christen HM. Phase transitions, phase coexistence, and piezoelectric switching behavior in highly strained BiFeO(3) films. Adv Mater 2013; 25:5561-7. [PMID: 23847158 DOI: 10.1002/adma.201302066] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2013] [Indexed: 05/12/2023]
Abstract
Highly strained BiFeO3 films transition into a true tetragonal state at 430 °C but remain polar to much higher temperatures (∼800 °C). Piezoelectric switching is only possible up to 300 °C, i.e., at temperatures for which strain stabilizes the stripe-like coexistence of multiple polymorphs.
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Affiliation(s)
- C Beekman
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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Kim HS, Christen HM. Controlling the magnetic properties of LaMnO3 thin films on SrTiO3(100) by deposition in a O2/Ar gas mixture. J Phys Condens Matter 2010; 22:146007. [PMID: 21389541 DOI: 10.1088/0953-8984/22/14/146007] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
The magnetic, structural, and transport properties of pulsed-laser deposited LaMnO(3) thin films are analyzed as a function of the O(2) partial pressure in the growth environment (using an O(2)/Ar gas mixture). Interestingly, the magnetic properties do not change gradually as the O(2) content increases. Instead, ferromagnetism emerges rapidly with the oxygen; a critical amount of Ar is needed to suppress ferromagnetism effectively in LaMnO(3) thin films. The most dramatic suppression of ferromagnetism occurs only in the narrow window below 10% oxygen, where the ferromagnetic moments decrease by a factor of 17. Above a certain oxygen concentration, the ferromagnetic moment no longer increases with oxygen. The sample grown in pure oxygen shows a metal-insulator transition at ∼200 K, but exhibits an insulating behavior again below ∼150 K. This intermediate metallic behavior is significantly suppressed by using the O(2)/Ar gas mixture.
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Affiliation(s)
- H S Kim
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6114, USA
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Lupini AR, Borisevich AY, Idrobo JC, Christen HM, Biegalski M, Pennycook SJ. Characterizing the two- and three-dimensional resolution of an improved aberration-corrected STEM. Microsc Microanal 2009; 15:441-453. [PMID: 19754980 DOI: 10.1017/s1431927609990389] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The successful development of third-order aberration correctors in transmission electron microscopy has seen aberration-corrected electron microscopes evolve from specialist projects, custom built at a small number of sites to common instruments in many modern laboratories. Here we describe some initial results illustrating the two- and three-dimensional (3D) performance of an aberration-corrected scanning transmission electron microscope with a prototype improved aberration corrector designed to also minimize fifth-order aberrations and a new, higher brightness gun. We show that atomic columns separated by 0.63 A can be resolved and demonstrate detection of single dopant atoms with 3D sensitivity.
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Affiliation(s)
- A R Lupini
- Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN 37831, USA.
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Abstract
Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well controlled interfaces. The first part of this paper presents a review of several useful modifications of the process, including methods inspired by combinatorial approaches. We then discuss detailed growth kinetics results, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness. Time-resolved surface x-ray diffraction measurements show that crystallization and the majority of interlayer mass transport occur on timescales that are comparable to those of the plume/substrate interaction, providing direct experimental evidence that a growth regime exists in which non-thermal processes dominate PLD. This understanding shows how kinetic growth manipulation can bring PLD closer to ideal LBL than any other growth method available today.
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Affiliation(s)
- H M Christen
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
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Varela M, Findlay SD, Lupini AR, Christen HM, Borisevich AY, Dellby N, Krivanek OL, Nellist PD, Oxley MP, Allen LJ, Pennycook SJ. Spectroscopic imaging of single atoms within a bulk solid. Phys Rev Lett 2004; 92:095502. [PMID: 15089484 DOI: 10.1103/physrevlett.92.095502] [Citation(s) in RCA: 93] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2003] [Indexed: 05/24/2023]
Abstract
The ability to localize, identify, and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics, and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission electron microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information is spatially confined around the scattering atom. Furthermore, we show how the depth of the atom within the crystal may be estimated.
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Affiliation(s)
- M Varela
- Condensed Matter Sciences Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6030, USA
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Sigman J, Norton DP, Christen HM, Fleming PH, Boatner LA. Antiferroelectric behavior in symmetric KNbO(3)/KTaO(3) superlattices. Phys Rev Lett 2002; 88:097601. [PMID: 11864051 DOI: 10.1103/physrevlett.88.097601] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2001] [Indexed: 05/23/2023]
Abstract
Antiferroelectric behavior is observed in artificially layered KTaO (3)/KNbO (3) perovskite superlattices. While KTaO (3) and KNbO (3) are ferroelectric and paraelectric, respectively, the superlattice appears antiferroelectric based on an increase in the dielectric constant with applied dc bias. This dielectric behavior is inconsistent with the nonlinear response for either paraelectric or ferroelectric materials. However, an increase in the dielectric constant with applied electric field is consistent with antiferroelectric behavior. The antiferroelectric ordering appears to be induced by cation modulation imposed by the superlattice.
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Affiliation(s)
- J Sigman
- Department of Materials Science and Engineering, University of Florida, P.O. Box 116400, Rhines Hall, Gainesville, FL 32611, USA
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