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Canet-Albiach R, Kreĉmarová M, Bailach JB, Gualdrón-Reyes AF, Rodríguez-Romero J, Gorji S, Pashaei-Adl H, Mora-Seró I, Martínez Pastor JP, Sánchez-Royo JF, Muñoz-Matutano G. Revealing Giant Exciton Fine-Structure Splitting in Two-Dimensional Perovskites Using van der Waals Passivation. Nano Lett 2022; 22:7621-7627. [PMID: 36074722 DOI: 10.1021/acs.nanolett.2c02729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Organic-inorganic layered perovskites are currently some of the most promising 2D van der Waals materials. Low crystal quality usually broadens the exciton line width, obscuring the fine structure of the exciton in conventional photoluminescence experiments. Here, we propose a mechanical approach to reducing the effect of spectral diffusion by means of hBN capping on layered perovskites, revealing the exciton fine structure. We used a stochastic model to link the reduction of the spectral line width with the population of charge fluctuation centers present in the organic spacer. van der Waals forces between both lattices cause the partial clamping of the perovskite organic spacer molecules, and hence the amplitude of the overall spectral diffusion effect is reduced. Our work provides a low-cost solution to the problem of accessing important fine-structure excitonic state information, along with an explanation of the important carrier dynamics present in the organic spacer that affect the quality of the optical emission.
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Affiliation(s)
- Rodolfo Canet-Albiach
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Marie Kreĉmarová
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - José Bosch Bailach
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Andrés F Gualdrón-Reyes
- Institute of Advanced Materials (INAM), Universitat Jaume I, Avenida de Vicent Sos Baynat s/n, 12071 Castelló de la Plana, Spain
- Facultad de Ciencias, Instituto de Ciencias Químicas, Isla Teja, Universidad Austral de Chile, 5090000 Valdivia, Chile
| | - Jesús Rodríguez-Romero
- Institute of Advanced Materials (INAM), Universitat Jaume I, Avenida de Vicent Sos Baynat s/n, 12071 Castelló de la Plana, Spain
- Facultad de Química, Universidad Nacional Autónoma de México, Circuito Exterior s/n, C.U., Coyoacán, 04510 Mexico City, Mexico
| | - Setatira Gorji
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Hamid Pashaei-Adl
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
| | - Iván Mora-Seró
- Institute of Advanced Materials (INAM), Universitat Jaume I, Avenida de Vicent Sos Baynat s/n, 12071 Castelló de la Plana, Spain
| | - Juan P Martínez Pastor
- Instituto de Ciencia de Materiales, Universidad de Valencia (ICMUV), 46071 Valencia, Spain
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Krečmarová M, Canet-Albiach R, Pashaei-Adl H, Gorji S, Muñoz-Matutano G, Nesládek M, Martínez-Pastor JP, Sánchez-Royo JF. Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets. ACS Appl Mater Interfaces 2021; 13:46105-46116. [PMID: 34520163 PMCID: PMC8485329 DOI: 10.1021/acsami.1c11060] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Indexed: 05/31/2023]
Abstract
Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized color defects deposited on dielectric substrates show bright (≈1 MHz) and stable room-temperature light emission with zero-phonon line peak energy varying from 1.56 to 2.27 eV, being the most probable value 2.16 eV. In addition to this, we have observed a substrate dependence of the optical performance of the generated color defects. The energy range of the emitters prepared on gold substrates is strongly reduced, as compared to that observed in dielectric substrates or even alumina. We attribute this effect to the quenching of low-energy color defects (these of energies lower than 1.9 eV) when gold substrates are used, which reveals the surface nature of the defects created in hBN nanosheets. Results described here are important for future quantum light experiments and their integration in photonic chips.
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Affiliation(s)
- Marie Krečmarová
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Rodolfo Canet-Albiach
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Hamid Pashaei-Adl
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Setatira Gorji
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Guillermo Muñoz-Matutano
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Miloš Nesládek
- Institute
for Materials Research, Material Physics
Division University of Hasselt, Wetenschapspark 1, B 3590 Diepenbeek, Belgium
| | - Juan P. Martínez-Pastor
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
| | - Juan F. Sánchez-Royo
- Instituto
de Ciencia de Materiales, Universidad de
Valencia (ICMUV), P.O. Box 22085, 46071 Valencia, Spain
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