Molybdenum-doped BiVO4 thin films: Facile preparation via hot-spin coating method and the relationship between surface statistical parameters and photoelectrochemical activity

Molybdenum-doped BiVO4 thin films were uniformly coated on indium-doped tin oxide (ITO) substrates via a facile modified hot spin coating (HSC) technique. The prepared layers were used as photoanode in a photoelectrochemical (PEC) cell. Different percentage of Mo dopant was examined to maximize the photo-current density (J) of the layers. The highest J value (872 ± 8 μA/cm2) was obtained by 5 atomic% of Mo doping. After that, the surface topographies of these samples were changed by varying the initial precursor concentration from 27 to 80 mM. The relation between surface topographies and the PEC activity of Mo-doped BiVO4 thin films was investigated from microscopic point of view by calculating the surface roughness exponent of α, and a mechanism for the PEC activity of Mo-doped BiVO4 photoanodes was proposed accordingly. The sample with a small roughness exponent provided a surface with jagged microscopic fluctuations which may trap the air molecules between the electrolyte and sample surface, hindering the fine atomic interaction for photo-generated electron-hole transition. Therefore, the layer with the highest roughness exponent (2α = 0.48 ± 0.03), which means the smoother microscopic surface and better interfacial contact with the electrolyte, exhibited the best PEC activity.

Application of CdTe/ZnS Core/Shell Quantum Dots as on Fluorescence Sensor for Detection of Gamma Rays

Gamma rays are a type of ionizing radiation that are extremely hazardous and dangerous for humans and the environment. The fluorescence method is a simple, useful, and fast method for the detection of gamma rays. In this research, CdTe/ZnS core/shell quantum dots were used as on fluorescence sensor for the detection of gamma rays. CdTe/ZnS core/shell QDs were prepared via a simple and rapid photochemical method. The shell thickness and concentration of CdTe/ZnS core/shell quantum dots were studied as two important factors in the optical behavior of CdTe/ZnS quantum dots. The obtained results showed that the PL intensity of CdTe/ZnS QDs after gamma irradiation was increased and also a slight redshift in the PL spectrum was observed. X-ray diffractions (XRD) and Raman analyses were used to study the effect of gamma irradiation on the structural properties of CdTe/ZnS QDs. The obtained results showed that gamma irradiation couldn't damage the crystalline structure of CdTe/ZnS core/shell QDs.

Effect of concentration and shell thickness on the optical behavior of aqueous CdTe/ZnSe core/shell quantum dots (QDs) exposed to ionizing radiation

In this work CdTe/ZnSe core/shell quantum dots (QDs) were synthesized via a simple, rapid and room temperature photochemical approach. Optical properties of aqueous prepared CdTe/ZnSe QDs were studied systematically under gamma irradiation with doses range of 0 Gy to 20 kGy. The obtained results showed a regular red shift behavior versus gamma irradiation dose, in PL peak and absorption edge of the CdTe/ZnSe QDs. Structural properties of CdTe/ZnSe QDs before and after gamma irradiation were characteristic by means of XRD, Raman and FT-IR analyses. The obtained results showed that the crystalline structure of CdTe/ZnSe core/shell QDs wasn't changed after gamma irradiation. Concentration and shell thickness as two important factors on the sensitivity of CdTe/ZnSe QDs in front of gamma irradiation have been investigated. Based on this study, CdTe/ZnSe QDs suggested as a good candidate for gamma dosimeter.