1
|
Tappertzhofen S, Nielen L, Valov I, Waser R. Memristively programmable transistors. Nanotechnology 2021; 33:045203. [PMID: 34670198 DOI: 10.1088/1361-6528/ac317f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2021] [Accepted: 10/20/2021] [Indexed: 06/13/2023]
Abstract
When designing the gate-dielectric of a floating-gate-transistor, one must make a tradeoff between the necessity of providing an ultra-small leakage current behavior for long state retention, and a moderate to high tunneling-rate for fast programming speed. Here we report on a memristively programmable transistor that overcomes this tradeoff. The operation principle is comparable to floating-gate-transistors, but the advantage of the analyzed concept is that ions instead of electrons are used for programming. Since the mass of ions is significantly larger than the effective mass of electrons, gate-dielectrics with higher leakage current levels can be used. We demonstrate the practical feasibility of the device using a proof-of-concept study based on a micrometer-sized thin-film transistor and LT-Spice simulations of 32 nm transistors. Memristively programmable transistors have the potential of high programming endurance and retention times, fast programming speeds, and high scalability.
Collapse
Affiliation(s)
- S Tappertzhofen
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Emil-Figge-Straße 68, D-44227, Dortmund, Germany
| | - L Nielen
- aixACCT Systems GmbH, Talbotstraße 25, D-52068 Aachen, Germany
| | - I Valov
- Institute for Electronic Materials (IWE 2) RWTH Aachen University, Sommerfeld Straße 24, D-52074 Aachen, Germany
- Jülich Research Center, Peter-Grünberg-Institute 7 (PGI 7), Wilhelm-Johnen-Straße 1, D-52428 Jülich, Germany
| | - R Waser
- Institute for Electronic Materials (IWE 2) RWTH Aachen University, Sommerfeld Straße 24, D-52074 Aachen, Germany
- Jülich Research Center, Peter-Grünberg-Institute 7 (PGI 7), Wilhelm-Johnen-Straße 1, D-52428 Jülich, Germany
| |
Collapse
|
2
|
Lübben M, Cüppers F, Mohr J, von Witzleben M, Breuer U, Waser R, Neumann C, Valov I. Design of defect-chemical properties and device performance in memristive systems. Sci Adv 2020; 6:eaaz9079. [PMID: 32548248 PMCID: PMC7272230 DOI: 10.1126/sciadv.aaz9079] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2019] [Accepted: 02/24/2020] [Indexed: 05/24/2023]
Abstract
Future development of the modern nanoelectronics and its flagships internet of things, artificial intelligence, and neuromorphic computing is largely associated with memristive elements, offering a spectrum of inevitable functionalities, atomic level scalability, and low-power operation. However, their development is limited by significant variability and still phenomenologically orientated materials' design strategy. Here, we highlight the vital importance of materials' purity, demonstrating that even parts-per-million foreign elements substantially change performance. Appropriate choice of chemistry and amount of doping element selectively enhances the desired functionality. Dopant/impurity-dependent structure and charge/potential distribution in the space-charge layers and cell capacitance determine the device kinetics and functions. The relation between chemical composition/purity and switching/neuromorphic performance is experimentally evidenced, providing directions for a rational design of future memristive devices.
Collapse
Affiliation(s)
- M. Lübben
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
| | - F. Cüppers
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
| | - J. Mohr
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
| | - M. von Witzleben
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
| | - U. Breuer
- Central Institute for Engineering, Electronics and Analytics, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - R. Waser
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Sommerfeldstraße 24, 52074 Aachen, Germany
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
- Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425 Jülich, Germany
| | - C. Neumann
- Heraeus Deutschland GmbH & Co. KG Heraeusstrasse 12-14, 63450 Hanau, Germany
| | - I. Valov
- JARA–Fundamentals for Future Information Technology, 52425 Jülich, Germany
- Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425 Jülich, Germany
| |
Collapse
|
3
|
Singh A, Schneller T, Valov I, Singh I, Srivastava A, Waser R. Copper facilitated nickel oxy-hydroxide films as efficient synergistic oxygen evolution electrocatalyst. J Catal 2020. [DOI: 10.1016/j.jcat.2020.02.023] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
|
4
|
Abstract
Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.
Collapse
Affiliation(s)
- A Zaffora
- Electrochemical Materials Science Laboratory, DICAM, Università degli Studi di Palermo, Viale delle Scienze, Ed. 6, Palermo 90128, Italy.
| | | | | | | | | |
Collapse
|
5
|
Bick DS, Krebs TB, Kleimaier D, Zurhelle AF, Staikov G, Waser R, Valov I. Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media. Langmuir 2018; 34:1347-1352. [PMID: 29303591 DOI: 10.1021/acs.langmuir.7b03733] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The oxygen evolution reaction (OER) during alkaline water electrolysis is the bottleneck of water splitting. Perovskite materials have been particularly proposed as good and economically reasonable electrocatalysts for the OER, showing promise and advantages with respect to classic metallic electrodes. However, the degradation of perovskites during catalysis limits their service lifetime. Recently, the material BaCo0.98Ti0.02O3-δ:Co3O4 was shown to be electrocatalytically and chemically stable during water electrolysis even under industrially relevant conditions. The lifetime of this perovskite-based system is prolonged by a factor of 10 in comparison to that of Pr0.2Ba0.8CoO3-δ and is comparable to that of industrially applied electrodes. Here we report on the degradation kinetics of several OER catalysts at room temperature, comparatively studied by monitoring the oxygen evolution at microelectrodes. A decrease in the reaction rate within a maximum of 60 s is observed, which is related to chemical and/or structural changes at the oxide surface.
Collapse
Affiliation(s)
- D S Bick
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - T B Krebs
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - D Kleimaier
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - A F Zurhelle
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - G Staikov
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - R Waser
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| | - I Valov
- Institute for Materials in Electrical Engineering and Information Technology (IWE2), RWTH Aachen University of Technology , D-52074 Aachen, Germany
| |
Collapse
|
6
|
Lübben M, Menzel S, Park SG, Yang M, Waser R, Valov I. SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO 2/Ag based systems. Nanotechnology 2017; 28:135205. [PMID: 28248653 DOI: 10.1088/1361-6528/aa5e59] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The counter-electrode material in resistively switching electrochemical metallization cells (ECMs) is a crucial factor influencing the nucleation of conductive filaments, the equilibrium electrode potentials, and kinetics in the devices, and hence the overall switching characteristics. Here, we demonstrate the influence of the counter-electrode (CE) material on the SET events and the importance of appropriate choice and combination of materials. The counter-electrode material influences the counter-electrode processes at the CE/insulator interface and consequently determines the metal ion concentration in the cells. We measured the switching kinetics for SiO2/Ag based ECM cells using different counter-electrode materials with different electrocatalytic activities towards water reduction, namely platinum, ruthenium, and iridium oxide, as well as titanium nitride and tantalum. The experimental results are fitted using a physical simulation model and are analysed for the limiting factors for fast SET kinetics.
Collapse
Affiliation(s)
- M Lübben
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, D-52074 Aachen, Germany
| | | | | | | | | | | |
Collapse
|
7
|
Valov I, Linn E, Tappertzhofen S, Schmelzer S, van den Hurk J, Lentz F, Waser R. Nanobatteries in redox-based resistive switches require extension of memristor theory. Nat Commun 2013; 4:1771. [PMID: 23612312 PMCID: PMC3644102 DOI: 10.1038/ncomms2784] [Citation(s) in RCA: 177] [Impact Index Per Article: 16.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2013] [Accepted: 03/21/2013] [Indexed: 11/08/2022] Open
Abstract
Redox-based nanoionic resistive memory cells are one of the most promising emerging nanodevices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous discovery of the link between redox-based nanoionic-resistive memory cells and memristors and memristive devices has further intensified the research in this field. Here we show on both a theoretical and an experimental level that nanoionic-type memristive elements are inherently controlled by non-equilibrium states resulting in a nanobattery. As a result, the memristor theory must be extended to fit the observed non-zero-crossing I-V characteristics. The initial electromotive force of the nanobattery depends on the chemistry and the transport properties of the materials system but can also be introduced during redox-based nanoionic-resistive memory cell operations. The emf has a strong impact on the dynamic behaviour of nanoscale memories, and thus, its control is one of the key factors for future device development and accurate modelling.
Collapse
Affiliation(s)
- I Valov
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany.
| | | | | | | | | | | | | |
Collapse
|
8
|
Valov I, Staikov G. Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories. J Solid State Electrochem 2012. [DOI: 10.1007/s10008-012-1890-5] [Citation(s) in RCA: 78] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
9
|
Abstract
Microcrossbar structured electrochemical metallization (ECM) cells based on silver iodide (AgI) solid electrolyte were fabricated and analyzed in terms of the resistive switching effect. The switching behavior implies the existence of quantized conductance higher than 78 µS which can be identified as a multiple of the single atomic point contact conductivity. The nonlinearity of the switching kinetics has been analyzed in detail. Fast switching in at least 50 ns was observed for short pulse measurements.
Collapse
Affiliation(s)
- S Tappertzhofen
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074 Aachen, Germany
| | | | | |
Collapse
|
10
|
Tappertzhofen S, Linn E, Nielen L, Rosezin R, Lentz F, Bruchhaus R, Valov I, Böttger U, Waser R. Capacity based nondestructive readout for complementary resistive switches. Nanotechnology 2011; 22:395203. [PMID: 21891857 DOI: 10.1088/0957-4484/22/39/395203] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Complementary resistive switches (CRS) were recently suggested to solve the sneak path problem of larger passive memory arrays. CRS cells consist of an antiserial setup of two bipolar resistive switching cells. The conventional destructive readout for CRS cells is based on a current measurement which makes a considerable call on the switching endurance. Here, we report a new approach for a nondestructive readout (NDRO) based on a capacity measurement. We suggest a concept of an alternative setup of a CRS cell in which both resistive switching cells have similar switching properties but are distinguishable by different capacities. The new approach has the potential of an energy saving and fast readout procedure without decreasing cycling performance and is not limited by the switching kinetics for integrated passive memory arrays.
Collapse
Affiliation(s)
- S Tappertzhofen
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany
| | | | | | | | | | | | | | | | | |
Collapse
|
11
|
Valov I, Korte C, De Souza RA, Martin M, Janek J. Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte. ACTA ACUST UNITED AC 2006. [DOI: 10.1149/1.2183888] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
|
12
|
Valov I, Janek J, Korte C, de Souza R, Martin M. Electrochemical Reduction and Incorporation of Nitrogen into Oxygen Conducting Oxides. Z Anorg Allg Chem 2004. [DOI: 10.1002/zaac.200470139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
|
13
|
Stoychev D, Valov I, Stefanov P, Atanasova G, Stoycheva M, Marinova T. Electrochemical growth of thin La2O3 films on oxide and metal surfaces. Materials Science and Engineering: C 2003. [DOI: 10.1016/s0928-4931(02)00261-8] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
|