Yan J, Kim MH, Elle JA, Sushkov AB, Jenkins GS, Milchberg HM, Fuhrer MS, Drew HD. Dual-gated bilayer graphene hot-electron bolometer.
Nat Nanotechnol 2012;
7:472-8. [PMID:
22659611 DOI:
10.1038/nnano.2012.88]
[Citation(s) in RCA: 158] [Impact Index Per Article: 13.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2012] [Accepted: 05/01/2012] [Indexed: 05/06/2023]
Abstract
Graphene is an attractive material for use in optical detectors because it absorbs light from mid-infrared to ultraviolet wavelengths with nearly equal strength. Graphene is particularly well suited for bolometers-devices that detect temperature-induced changes in electrical conductivity caused by the absorption of light-because its small electron heat capacity and weak electron-phonon coupling lead to large light-induced changes in electron temperature. Here, we demonstrate a hot-electron bolometer made of bilayer graphene that is dual-gated to create a tunable bandgap and electron-temperature-dependent conductivity. The bolometer exhibits a noise-equivalent power (33 fW Hz(-1/2) at 5 K) that is several times lower, and intrinsic speed (>1 GHz at 10 K) three to five orders of magnitude higher than commercial silicon bolometers and superconducting transition-edge sensors at similar temperatures.
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