Annihilation of exceptional points from different Dirac valleys in a 2D photonic system

Topological physics relies on Hamiltonian’s eigenstate singularities carrying topological charges, such as Dirac points, and – in non-Hermitian systems – exceptional points (EPs), lines or surfaces. So far, the reported non-Hermitian topological transitions were related to the creation of a pair of EPs connected by a Fermi arc out of a single Dirac point by increasing non-Hermiticity. Such EPs can annihilate by reducing non-Hermiticity. Here, we demonstrate experimentally that an increase of non-Hermiticity can lead to the annihilation of EPs issued from different Dirac points (valleys). The studied platform is a liquid crystal microcavity with voltage-controlled birefringence and TE-TM photonic spin-orbit-coupling. Non-Hermiticity is provided by polarization-dependent losses. By increasing the non-Hermiticity degree, we control the position of the EPs. After the intervalley annihilation, the system becomes free of any band singularity. Our results open the field of non-Hermitian valley-physics and illustrate connections between Hermitian topology and non-Hermitian phase transitions.

The authors study a liquid crystal microcavity with polarization-dependent absorption, a source of non-Hermiticity. The transition in the Hermitian topology of the spin-orbit coupling makes possible the annihilation of exceptional points.

Mammalian cell defence mechanisms against the cytotoxicity of NaYF4:(Er,Yb,Gd) nanoparticles

Water-soluble upconversion nanoparticles (UCNPs), based on polyvinylpyrrolidone (PVP)-coated NaYF₄:Er³⁺,Yb³⁺,Gd³⁺, with various concentrations of Gd³⁺ ions and relatively high upconversion efficiencies, were synthesized. The internalization and cytotoxicity of the thus obtained UCNPs were evaluated in three cell lines (HeLa, HEK293 and astrocytes). No cytotoxicity was observed even at concentrations of UCNPs up to 50 μg ml^-1. The fate of the UCNPs within the cells was studied by examining their upconversion emission spectra with confocal microscopy and confirming these observations with transmission electron microscopy. It was found that the cellular uptake of the UCNPs occurred primarily by clathrin-mediated endocytosis, whereas they were secreted from the cells via lysosomal exocytosis. The results of this study, focused on the mechanisms of the cellular uptake, localization and secretion of UCNPs, demonstrate, for the first time, the co-localization of UCNPs within discrete cell organelles.

Doubly Dressed Bosons: Exciton Polaritons in a Strong Terahertz Field

We demonstrate the existence of a novel quasiparticle, an exciton in a semiconductor doubly dressed with two photons of different wavelengths: a near infrared cavity photon and terahertz (THz) photon, with the THz coupling strength approaching the ultrastrong coupling regime. This quasiparticle is composed of three different bosons, being a mixture of a matter-light quasiparticle. Our observations are confirmed by a detailed theoretical analysis, treating quantum mechanically all three bosonic fields. The doubly dressed quasiparticles retain the bosonic nature of their constituents, but their internal quantum structure strongly depends on the intensity of the applied terahertz field.

Dynamics of Trion formation in InxGa1-xAs quantum wells

We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is substantiated by time-resolved photoluminescence experiments performed on a very high quality InxGa1-xAs quantum well sample, in which the photoluminescence contributions at the energy of the trion and exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor quantum well is explained by the same model.

Direct observation of the mott transition in an optically excited semiconductor quantum well

We have studied density-dependent time-resolved photoluminescence from a 80 A InGaAs/GaAs single quantum well excited by picosecond pulses. We succeed in giving evidence for the transition from an exciton-dominated population to an unbound electron-hole pair population as the pair density increases. For pair densities below this excitonic Mott transition we observe a spectrally separate emission from free electron-hole pairs in addition to excitonic luminescence, thereby proving the coexistence of both species. Exciton binding energy and band gap remain unchanged even near the upper bound of this coexistence region. Above the Mott density we observe a purely exponential high energy tail of the photoluminescence and a redshift of the band gap with pair density. The transition occurs gradually between 1 x 10(10) and 1 x 10(11) cm(-2) at the carrier temperatures of our experiment.

Determination of the exciton formation in quantum wells from time-resolved interband luminescence

We present the results of a detailed time-resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated. We perform this experiment with a spectral resolution and a sensitivity of the setup, allowing us to keep the observation of these two separate contributions over a broad range of times and densities. This allows us to directly evidence the exciton formation time, which depends on the density as expected from theory. We also denote the dominant contribution of excitons to the luminescence signal, and the lack of thermodynamical equilibrium at low densities.