Sakai K, Okada Y, Kitaoka S, Tsurumi J, Ohishi Y, Fujiwara A, Takimiya K, Takeya J. Anomalous pressure effect in heteroacene organic field-effect transistors.
Phys Rev Lett 2013;
110:096603. [PMID:
23496736 DOI:
10.1103/physrevlett.110.096603]
[Citation(s) in RCA: 10] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2012] [Revised: 12/17/2012] [Indexed: 06/01/2023]
Abstract
Anomalous pressure dependent conductivity is revealed for heteroacene organic field-effect transistors of dinaphtho[2, 3-b:2', 3'-f]thieno[3, 2-b]thiophene single crystals in the direction of a and b crystallographic axes. In contrast to the normal characteristics of a monotonic increase in mobility μ with the application of external hydrostatic pressure P in conductors, we found that the present organic semiconductor devices exhibit nonmonotonic and gigantic pressure dependence including an even negative pressure coefficient dμ/dP. In combination with a structural analysis based on x-ray diffraction experiments under pressure, it is suggested that on-site molecular orientation and displacement peculiar in heteroacene molecules are responsible for the anomalous pressure effect.
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