Super-resolution laser probing of integrated circuits using algorithmic methods

Laser probing remains invaluable to the semiconductor industry for isolating and diagnosing defects in silicon transistors in integrated circuits during electrical stress tests. However, continuous device miniaturization below the 20 nm technology node has crammed multiple transistors within the focal spot of the laser beam, resulting in signal crosstalk, poor beam positioning accuracy and degraded fault isolation capabilities. The challenge is analogous to focusing attention to a single speaker in a crowd despite the multiple simultaneous conversations in the background. Through algorithms introduced in this patented work, consisting of cross-correlations, clustering, and our previously developed combinational logic analysis, we achieved beam positioning accuracy to better than 10 nm, extracted electrooptic waveforms from a node of a group of transistors (~18 times beyond the optical resolution limit), and applied this to isolate and identify an actual fault on a defective device. While problems associated with probing with shorter wavelength lasers continue to be addressed, our approach enhances and enables the continued probing of ICs using sub-bandgap photon energies without hardware modification to existing technology at semiconductor technology nodes below 10 nm.

Dielectric breakdown of 2D muscovite mica

Localized electrical breakdown (BD) measurements are performed on 2D muscovite mica flakes of ~ 2 to 15 nm thickness using Conduction Atomic Force Microscopy (CAFM). To obtain robust BD data by CAFM, the probed locations are spaced sufficiently far apart (> 1 µm) to avoid mutual interference and the maximum current is set to a low value (< 1 nA) to ensure severe damage does not occur to the sample. The analyses reveals that 2D muscovite mica has high electrical breakdown strength (12 MV/cm or more) and low leakage current, comparable to 2D hexagonal boron nitride (h-BN) of similar thickness. However, a significant difference compared to h-BN is the very low current necessary to avoid catastrophic damage during the BD event, even for very thin (2-3 nm) flakes. Further, for mica the BD transient always appear to be very abrupt, and no progressive BD process was definitively observed. These marked differences between mica and h-BN are attributed to the poor thermal conductivity of mica.

Standards for the Characterization of Endurance in Resistive Switching Devices

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >10⁶ cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has emerged as a promising 2D/layered dielectric owing to its successful integration with graphene and other 2D materials, although a coherent picture of the overall dielectric breakdown mechanism in h-BN is yet to emerge. Here, we have carried out a systematic study using conduction atomic force microscopy to provide insights into the process of defect generation and dielectric degradation in the progressive breakdown (PBD) and hard breakdown (HBD) stages in 2-5 nm thick chemical vapor deposition (CVD)-grown multilayer h-BN films. The PBD and HBD regimes show different behaviors. Under electrical stress in the PBD stage, defects are generated progressively in the h-BN, leading to a gradual reduction of the effective barrier resistance and continuous soft breakdowns (SBDs) of the dielectric material. Random telegraph noise nano-spectroscopy shows that low frequency noise becomes dominant after an SBD event due to the creation of additional defects around the percolation path. We also observe a wide variation in the current-voltage (I-V) breakdown plots in the PBD stage, giving rise to non-Weibull statistical distribution of the breakdown voltage. We attribute this observation to the significant thickness inhomogeneity in the CVD films. At HBD, h-BN materials are always physically removed from the film, leading to the formation of pits at the breakdown location. Interestingly, pit formation is also occasionally observed in the PBD stage under very low current compliances, suggesting that breakdown may proceed by a mixture of defect generation and material removal in h-BN CVD films.

The interplay between drift and electrical measurement in conduction atomic force microscopy

In Conduction Atomic Force Microscopy (CAFM), it is sometimes required to monitor electrical data at a single location over an extended period of time. However, thermal drift of the microscope will cause the tip to move with respect to the sample and thus limit the collection of data. We investigate a method to prolong the time a tip dwells at a location by choosing the AFM cantilever to have small spring constants in the lateral directions. The basis of the approach is that the tip can only move (or slip) once the lateral forces caused by drift overcome the friction force pinning the tip to the surface. We demonstrate the effect experimentally using platinum wire tips and diamond coated tips on SiO₂ and HfO₂ dielectric films. Simultaneous measurement of the current flow and lateral force signals show that the onset of tip slipping correlates with the beginning of a decrease in the measured current flow, and the onset of slip is prolonged for blunt tips or cantilevers having soft lateral spring constants. The approach not only provides a way to improve the CAFM method for time dependent measurements but also assists in interpreting CAFM data in the presence of drift.

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar and threshold resistive switching is observed consistently on multi-layer h-BN/Cu stacks in the low power regime with current compliance (I_comp) of less than 100 nA. Standard random telegraph noise signatures were observed in the low resistance state (LRS), similar to the trends in oxygen vacancy-based RRAM devices. While h-BN appears to be a good candidate in terms of switching performance and endurance, it performs poorly in terms of retention lifetime due to the self-recovery of LRS state (similar to recovery of soft breakdown in oxide-based dielectrics) that is consistently observed at all locations without requiring any change in the voltage polarity for I_comp ~1–100 nA.

Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification

Development of technologies for water desalination and purification is critical to meet the global challenges of insufficient water supply and inadequate sanitation, especially for point-of-use applications. Conventional desalination methods are energy and operationally intensive, whereas adsorption-based techniques are simple and easy to use for point-of-use water purification, yet their capacity to remove salts is limited. Here we report that plasma-modified ultralong carbon nanotubes exhibit ultrahigh specific adsorption capacity for salt (exceeding 400% by weight) that is two orders of magnitude higher than that found in the current state-of-the-art activated carbon-based water treatment systems. We exploit this adsorption capacity in ultralong carbon nanotube-based membranes that can remove salt, as well as organic and metal contaminants. These ultralong carbon nanotube-based membranes may lead to next-generation rechargeable, point-of-use potable water purification appliances with superior desalination, disinfection and filtration properties.

Femtosecond laser induced surface nanostructuring and simultaneous crystallization of amorphous thin silicon film

Ultrafast pulsed laser irradiation is demonstrated to be able to produce surface nano-structuring and simultaneous crystallization of amorphous silicon thin film in one step laser processing. After fs laser irradiation on 80 nm-thick a-Si deposited on Corning 1737 glass substrate, the color change from light yellow to dark brown was observed on the sample surface. AFM images show that the surface nano-spike pattern was produced on amorphous-Si:H film by fs laser irradiation. Furthermore, micro-Raman results indicate that the a-Si has been crystallized into nanocrystalline Si. Also, the absorptance of the fs laser treated Si thin film was found to increase in the spectrum range of below bandgap compared to original untreated a-Si. The developed process has a potential application in fabrication of high efficiency Si thin film solar cells.