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Xu EZ, Liu HM, Park K, Li Z, Losovyj Y, Starr M, Werbianskyj M, Fertig HA, Zhang SX. p-Type transition-metal doping of large-area MoS 2 thin films grown by chemical vapor deposition. Nanoscale 2017; 9:3576-3584. [PMID: 28246665 DOI: 10.1039/c6nr09495c] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (e.g. MoS2) have recently emerged as a promising material system for electronic and optoelectronic applications. A major challenge for these materials, however, is to realize bipolar electrical transport properties (i.e. both p-type and n-type conduction), which is critical for enhancing device performance and functionalities. Here, we demonstrate the transition metal zinc as a p-type dopant in the otherwise n-type MoS2, through systematic characterizations of large area Zn-doped MoS2 thin films grown by a one-step chemical vapor deposition (CVD) approach. Raman characterization and X-ray photoelectron spectroscopy studies identified millimeter-scale, monolayer films with 1-2% Zn as dopants. Zinc doping suppresses n-type conductivity in MoS2 and shifts its Fermi level downwards. The stability and p-type nature of Zn dopants were further confirmed by density-functional-theory calculations of formation energies and electronic band structures. The electrical transport properties of Zn-MoS2 films can be influenced by stoichiometry, and p-type gate transfer characteristics were realized by thermal treatment under a sulfur atmosphere. Our work highlights transition-metal doping followed by sulfur vacancy elimination in CVD grown films as a promising route for achieving large area p-type transition metal dichalcogenide films that are essential for practical applications in electronics and optoelectronics.
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Affiliation(s)
- E Z Xu
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - H M Liu
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - K Park
- Department of Physics, Virginia Tech, Blacksburg, Virginia 24061, USA
| | - Z Li
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - Y Losovyj
- Department of Chemistry, Indiana University, Bloomington, IN 47405, USA
| | - M Starr
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - M Werbianskyj
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - H A Fertig
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
| | - S X Zhang
- Department of Physics, Indiana University, Bloomington, IN 47405, USA.
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