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Nieke P, Kita J, Häming M, Moos R. Manufacturing Dense Thick Films of Lunar Regolith Simulant EAC-1 at Room Temperature. Materials (Basel) 2019; 12:ma12030487. [PMID: 30764479 PMCID: PMC6384728 DOI: 10.3390/ma12030487] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/22/2018] [Revised: 01/30/2019] [Accepted: 02/01/2019] [Indexed: 11/16/2022]
Abstract
The Aerosol Deposition (AD, also known as gas kinetic spraying or vacuum deposition) method is a rather novel coating process to produce dense thick films directly from dry ceramic (or metal) powders on a variety of substrates without any heat treatment. Because of the similarity of the up to now used powders and lunar regolith, it is imaginable to use AD systems for future in situ resource utilization missions on the Moon planned by several space agencies. To test the feasibility of such an endeavor, the processability of lunar mare simulant EAC-1 by the AD method has been examined in this study. Three regolith films with an area of 25 × 10 mm2, and thicknesses between 2.50 µm and 5.36 µm have been deposited on steel substrates using a standard AD setup. Deposited films have been investigated by Laser Scanning Microscopy (LSM) and Scanning Electron Microscopy (SEM). Moreover, the roughness and Vickers hardness of the deposited films and the underlying substrates have been measured. It has been shown that dense consolidated films of regolith simulant can be produced within minutes by AD. The deposited films show a higher roughness and, on average, a higher hardness than the steel substrates. Since on the Moon, naturally available regolith powders are abundant and very dry, and since the required process vacuum is available, AD appears to be a very promising method for producing dense coatings in future Moon exploration and utilization missions.
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Affiliation(s)
- Philipp Nieke
- Department of Functional Materials, University of Bayreuth, 95440 Bayreuth, Germany;
| | - Jaroslaw Kita
- Department of Functional Materials, University of Bayreuth, 95440 Bayreuth, Germany;
| | - Marc Häming
- Airbus Defence and Space, Microgravity Payloads, 88090 Immenstaad, Germany;
| | - Ralf Moos
- Department of Functional Materials, University of Bayreuth, 95440 Bayreuth, Germany;
- Correspondence: ; Tel.: +49-921-557-401
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Duncan DA, Kephart JM, Horsley K, Blum M, Mezher M, Weinhardt L, Häming M, Wilks RG, Hofmann T, Yang W, Bär M, Sampath WS, Heske C. Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells. ACS Appl Mater Interfaces 2015. [PMID: 26200260 DOI: 10.1021/acsami.5b03503] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.
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Affiliation(s)
- Douglas A Duncan
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- ‡Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Jason M Kephart
- §Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Kimberly Horsley
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
| | - Monika Blum
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- ∥Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michelle Mezher
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
| | - Lothar Weinhardt
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- ⊥ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
- #Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
- ∇Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe, Germany
| | - Marc Häming
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- #Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
| | - Regan G Wilks
- ‡Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
| | - Timo Hofmann
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
| | - Wanli Yang
- ∥Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Marcus Bär
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- ‡Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 14109 Berlin, Germany
- ⊗Institut für Physik und Chemie, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany
| | - Walajabad S Sampath
- §Department of Mechanical Engineering, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Clemens Heske
- †Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003, United States
- ⊥ANKA Synchrotron Radiation Facility, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
- #Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
- ∇Institute for Chemical Technology and Polymer Chemistry, Karlsruhe Institute of Technology (KIT), 76128 Karlsruhe, Germany
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Baby TT, Garlapati SK, Dehm S, Häming M, Kruk R, Hahn H, Dasgupta S. A general route toward complete room temperature processing of printed and high performance oxide electronics. ACS Nano 2015; 9:3075-3083. [PMID: 25693653 DOI: 10.1021/nn507326z] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Critical prerequisites for solution-processed/printed field-effect transistors (FETs) and logics are excellent electrical performance including high charge carrier mobility, reliability, high environmental stability and low/preferably room temperature processing. Oxide semiconductors can often fulfill all the above criteria, sometimes even with better promise than their organic counterparts, except for their high process temperature requirement. The need for high annealing/curing temperatures renders oxide FETs rather incompatible to inexpensive, flexible substrates, which are commonly used for high-throughput and roll-to-roll additive manufacturing techniques, such as printing. To overcome this serious limitation, here we demonstrate an alternative approach that enables completely room-temperature processing of printed oxide FETs with device mobility as large as 12.5 cm(2)/(V s). The key aspect of the present concept is a chemically controlled curing process of the printed nanoparticle ink that provides surprisingly dense thin films and excellent interparticle electrical contacts. In order to demonstrate the versatility of this approach, both n-type (In2O3) and p-type (Cu2O) oxide semiconductor nanoparticle dispersions are prepared to fabricate, inkjet printed and completely room temperature processed, all-oxide complementary metal oxide semiconductor (CMOS) invertors that can display significant signal gain (∼18) at a supply voltage of only 1.5 V.
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Affiliation(s)
- Tessy T Baby
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- ‡Helmholtz Institute Ulm (HIU), Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Suresh K Garlapati
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- §KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, 64287 Darmstadt, Germany
| | - Simone Dehm
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Marc Häming
- ⊥Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Robert Kruk
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Horst Hahn
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
- ‡Helmholtz Institute Ulm (HIU), Albert-Einstein-Allee 11, 89081 Ulm, Germany
- §KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, 64287 Darmstadt, Germany
| | - Subho Dasgupta
- †Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
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