Observation of the Anomalous Hall Effect in a Layered Polar Semiconductor

Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes can be provided by recent discoveries of a time-reversal symmetry breaking anomalous Hall effect (AHE) in noncollinear magnets and altermagnets, but hitherto reported bulk materials are not polar. Here, the authors report the observation of a spontaneous AHE in doped AgCrSe2 , a layered polar semiconductor with an antiferromagnetic coupling between Cr spins in adjacent layers. The anomalous Hall resistivity 3μ Ω c m $\mu \Omega \, \textnormal {cm}$ is comparable to the largest observed in compensated magnetic systems to date, and is rapidly switched off when the angle of an applied magnetic field is rotated to ≈80° from the crystalline c-axis. The ionic gating experiments show that the anomalous Hall conductivity magnitude can be enhanced by modulating the p-type carrier density. They also present theoretical results that suggest the AHE is driven by Berry curvature due to noncollinear antiferromagnetic correlations among Cr spins, which are consistent with the previously suggested magnetic ordering in AgCrSe2 . The results open the possibility to study the interplay of magnetic and ferroelectric-like responses in this fascinating class of materials.

Evolution of the magnetic properties in the antiferromagnet Ce2RhIn8 simultaneously doped with Cd and Ir

We report the evolution of the magnetic properties of C e 2 R h 1 - x I r x I n 8 - y C d y single crystals. In particular, for C e 2 R h 0.5 I r 0.5 I n 8 (T N = 2.0 K ) and C e 2 R h 0.5 I r 0.5 I n 7.79 C d 0.21 (T N = 4.2 K ), we have solved the magnetic structure of these compounds using single-crystal neutron magnetic diffraction experiments. Taking the magnetic structure of the C e 2 R h I n 8 heavy-fermion antiferromagnet as a reference, we have identified no changes in the q = 1 2 , 1 2 , 0 magnetic wave vector; however, the direction of the ordered Ce3+ moments rotates toward the a b plane, under the influence of both dopants. By constraining the analysis of the crystalline electric field (CEF) with the experimental ordered moment's direction and high-temperature magnetic-susceptibility data, we have used a mean-field model with tetragonal CEF and exchange interactions to gain insight into the CEF scheme and anisotropy of the CEF ground-state wave function when Cd and Ir are introduced into C e 2 R h I n 8 . Consistent with previous work, we find that Cd doping in C e 2 R h I n 8 tends to rotate the magnetic moment toward the a b plane and lower the energy of the CEF excited states' levels. Interestingly, the presence of Ir also rotates the magnetic moment towards the a b plane although its connection to the CEF overall splitting evolution for the y = 0 samples may not be straightforward. These findings may shed light on the origin of the disordered spin-glass phase on the Ir-rich side of the phase diagram and also indicate that the C e 2 M I n 8 compounds may not follow exactly the same Rh-Ir CEF effects trend established for the C e 2 M I n 5 compounds.

Evidence of precursor orthorhombic domains well above the electronic nematic transition temperature in Sr(Fe1-x Co x )2As2

Raman scattering, synchrotron x-ray diffraction, specific heat, resistivity and magnetic susceptibility measurements were performed in Sr(Fe_1-x Co _x )₂As₂ [[Formula: see text]] single crystals with superconducting critical temperature [Formula: see text] K and two additional transitions at 132 and 152 K observed in both specific heat and resistivity data. A quasielastic Raman signal with B _2g symmetry (tetragonal cell) associated with electronic nematic fluctuations is observed. Crucially, this signal shows maximum intensity at [Formula: see text] K, marking the nematic transition temperature. X-ray diffraction shows evidence of coexisting orthorhombic and tetragonal domains between [Formula: see text] and [Formula: see text]  ∼  152 K, implying that precursor orthorhombic domains emerge over an extended temperature range above [Formula: see text]. While the height of the quasielastic Raman peak is insensitive to [Formula: see text], the temperature-dependence of the average nematic fluctuation rate indicates a slowing down of the nematic fluctuations inside the precursor orthorhombic domains. These results are analogous to those previously reported for the LaFeAsO parent oxypnictide (Kaneko et al 2017 Phys. Rev. B 96 014506). We propose a scenario where the precursor orthorhombic phase may be generated within the electronically disordered regime ([Formula: see text]) as long as the nematic fluctuation rate is sufficiently small in comparison to the optical phonon frequency range. In this regime, the local atomic structure responds adiabatically to the electronic nematic fluctuations, creating a net of orthorhombic clusters that, albeit dynamical for [Formula: see text], may be sufficiently dense to sustain long-range phase coherence in a diffraction process up to [Formula: see text].

Immunization with the recombinant myosin regulatory light chain (FhrMRLC) in Adjuplex® adjuvant elicits a Th1-biased immune response and a reduction of parasite burden in Fasciola hepatica infected rats

The aim of this study was to assess the immune response and the protective efficacy elicited by the vaccination with the recombinant Fasciola hepatica myosin regulatory light chain (FhrMRLC) in Adjuplex® adjuvant against the infection with F. hepatica in rats. Four groups of 15 animals each were used for the study, one group was immunized with the recombinant F. hepatica MRLC in Adjuplex® adjuvant and the other groups remained as adjuvant, positive and negative control groups. The parasitological study showed that a statistically significant reduction of 65.1% and 82.1% in fluke burden and fecal egg count, respectively, was detected in vaccinated animals. In addition, vaccination with FhrMRLC induced a well-defined humoral and cellular immune response characterized by a significant production of specific IgG and IL-2, IL-12, TNF-α and IFN-γ; which confirms the immunogenic capacity of the FhrMRLC.

High-pressure studies on heavy-fermion antiferromagnet CeCuBi2

We report in-plane electrical resistivity studies of CeCuBi₂ and LaCuBi₂ single crystals under applied pressure. At ambient pressure, CeCuBi₂ is a c-axis Ising antiferromagnet with a transition temperature [Formula: see text] K. In a magnetic field applied along the c-axis at [Formula: see text] K a spin-flop transition takes place [Formula: see text] T. Applying pressure on CeCuBi₂ suppresses T _N at a slow rate. [Formula: see text] extrapolates to zero temperature at [Formula: see text] GPa. The critical field of the spin-flop transition [Formula: see text] displays a maximum of 6.8 T at [Formula: see text] GPa. At low temperatures, a zero-resistance superconducting state emerges upon the application of external pressure having a maximum T _c of 7 K at 2.6 GPa in CeCuBi₂. High-pressure electrical-resistivity experiments on the non-magnetic reference compound LaCuBi₂ reveal also a zero resistance state with similar critical temperatures in the same pressure range as CeCuBi₂. The great similarity between the superconducting properties of both materials and elemental Bi suggests a common origin of the superconductivity. We discuss that the appearance of this zero resistance state superconductivity may be related to the Bi layers present in the crystalline structure of both compounds and, therefore, could be intrinsic to CeCuBi₂ and LaCuBi₂, however further experiments under pressure are necessary to clarify this issue.

Combined external pressure and Cu-substitution studies on BaFe₂As₂ single crystals

We report a combined study of external pressure and Cu-substitution on BaFe2As2 single crystals grown by the in-flux technique. At ambient pressure, the Cu-substitution is known to suppress the spin density wave (SDW) phase in pure BaFe2As2(T(SDW) ≈ 140 K) and to induce a superconducting (SC) dome with a maximum transition temperature T(c)(max) ≃ 4.2 K. This T(c)(max) is much lower than the T(c) ∼ 15-28 K achieved in the case of Ru, Ni and Co substitutions. Such a lower T(c) is attributed to a Cu(2+) magnetic pair-breaking effect. The latter is strongly suppressed by applied pressure, as shown herein, Tc can be significantly enhanced by applying high pressures. In this work, we investigated the pressure effects on Cu(2+) magnetic pair-breaking in the BaFe(2-x)Cu(x)As2 series. Around the optimal concentration (x(opd) = 0.11), all samples showed a substantial increase of T(c) as a function of pressure. Yet for those samples with a slightly higher doping level (over-doped regime), T(c) presented a dome-like shape with maximum T(c) ≃ 8 K. Remarkably interesting, the under-doped samples, e.g. x = 0.02 display a maximum pressure induced T(c) ≃ 30 K which is comparable to the maximum T(c)'s found for the pure compound under external pressures. Furthermore, the magnetoresistance effect as a function of pressure in the normal state of the x = 0.02 sample also presented an evolution consistent with the screening of the Cu(2+) local moments. These findings demonstrate that the Cu(2+) magnetic pair-breaking effect is completely suppressed by applying pressure in the low concentration regime of Cu(2+) substituted BaFe2As2.

Possible unconventional superconductivity in substituted BaFe2As2 revealed by magnetic pair-breaking studies

The possible existence of a sign-changing gap symmetry in BaFe₂As₂-derived superconductors (SC) has been an exciting topic of research in the last few years. To further investigate this subject we combine Electron Spin Resonance (ESR) and pressure-dependent transport measurements to investigate magnetic pair-breaking effects on BaFe_1.9M_0.1As₂ (M = Mn, Co, Cu, and Ni) single crystals. An ESR signal, indicative of the presence of localized magnetic moments, is observed only for M = Cu and Mn compounds, which display very low SC transition temperature (T_c) and no SC, respectively. From the ESR analysis assuming the absence of bottleneck effects, the microscopic parameters are extracted to show that this reduction of T_c cannot be accounted by the Abrikosov-Gorkov pair-breaking expression for a sign-preserving gap function. Our results reveal an unconventional spin- and pressure-dependent pair-breaking effect and impose strong constraints on the pairing symmetry of these materials.