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Deshmukh S, Bishop MT, Dermody D, Dietsche L, Kuo TC, Mushrush M, Harris K, Zieman J, Morabito P, Orvosh B, Patrick D. A Novel High-Throughput Viscometer. ACS Comb Sci 2016; 18:405-14. [PMID: 27259016 DOI: 10.1021/acscombsci.5b00176] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A novel, rapid, parallel, and high-throughput system for measuring viscosity of materials under different conditions of shear rate, temperature, time, etc., has been developed. This unique system utilizes the transient flow of a complex fluid through pipettes. This approach offers significant practical advantages over microfluidic-based devices for viscosity screening: no cleanup is required, the method is high throughput (<1 h for 100 samples), and only small sample volumes (<1 mL) are used. This paper details for the first time the experimental and modeling efforts to implement this mass- and pressure-based viscosity measurement concept as a robust viscosity estimation tool. This approach is very well-suited for viscosity measurements in high-throughput formulation workflows, as it is rapid and parallel and operates directly on samples in various microtiter plate formats. We present systematic experimental observations together with numerical and analytical modeling approaches to characterize instrument capabilities and limitations. The complex transient flow of fluids through these pipettes leads to data-rich pressure profiles. Numerical and analytical modeling is then used to extract viscosity and other rheological parameters from these pressure profiles. We have successfully utilized this viscosity screening tool for a multitude of complex fluids including oils, paints, solvents, and detergents.
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Affiliation(s)
- Suraj Deshmukh
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Matthew T. Bishop
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Daniel Dermody
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Laura Dietsche
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Tzu-Chi Kuo
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Melissa Mushrush
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Keith Harris
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Jonathan Zieman
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Paul Morabito
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Brian Orvosh
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
| | - Don Patrick
- Core R&D, The Dow Chemical Company, Midland, MI 48674, United States
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Facchetti A, Yoon MH, Katz HE, Mushrush M, Marks TJ. N- and P-Type Building Blocks for Organic Electronics Based on Oligothiophene Cores. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-771-l12.8/h11.8] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractOrganic semiconductors exhibiting complementary-type carrier mobility are the key components for the development of the field of “gplastic electronics” We present here a novel series of α,ω- and isomerically pure ββ'-diperfluorohexyl-substituted thiophene and study the impact of fluoroalkyl substitution and conjugation length vis-a-vis the corresponding fluorinefree analogues. Trends between the fluorinated and fluorine-free families in molecular packing, HOMO-LUMO gap, and π-π interactions are found to be strikingly similar. TFT measurements indicate that all members of the fluorinated series are n-type semiconductors
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Feist R, Rozeveld S, Mushrush M, Haley R, Lemon B, Gerbi J, Nichols B, Nilsson R, Richardson T, Sprague S, Tesch R, Torka S, Wood C, Wu S, Yeung S, Bernius MT. Examination of lifetime-limiting failure mechanisms in CIGSS-based PV minimodules under environmental stress. ACTA ACUST UNITED AC 2008. [DOI: 10.1109/pvsc.2008.4922579] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Facchetti A, Mushrush M, Yoon MH, Hutchison GR, Ratner MA, Marks TJ. Building blocks for n-type molecular and polymeric electronics. Perfluoroalkyl- versus alkyl-functionalized oligothiophenes (nT; n = 2-6). Systematics of thin film microstructure, semiconductor performance, and modeling of majority charge injection in field-effect transistors. J Am Chem Soc 2004; 126:13859-74. [PMID: 15493947 DOI: 10.1021/ja0489846] [Citation(s) in RCA: 302] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
The solid-state properties and FET electrical behavior of several series of alpha,omega- and beta,beta'-fluorocarbon- and alkyl-substituted and unsubstituted oligothiophenes nTs (n = 2-6) are compared and contrasted. The thin films were grown by slow vacuum deposition over a range of substrate temperatures and/or by casting from solution and were investigated by X-ray diffraction and scanning electron microscopy. Our results indicate that vacuum deposition at 60-80 degrees C affords films with remarkably similar microstructures despite the extensive H --> F substitution. Trends in observed d spacing versus molecular core extension provide quantitative information on molecular orientation. Field-effect transistor measurements performed for all systems and having the same device structure, components, and fabrication conditions demonstrate that all nTs functionalized with fluorocarbon chains at the thiophene termini are n-type semiconductors, in contrast to the p-type activity of the remaining systems. One of these systems, alpha,omega-diperfluorohexyl-4T, exhibits a mobility of 0.22 cm2/(V s) and an Ion:Ioff ratio of 10(6), one of the highest so far reported for an n-type organic semiconductor. The effect of substitution regiochemistry on FET majority charge carrier was additionally studied, in the case of a 6T core, by shifting the fluorocarbon substituents from the terminal to the central thiophene units. Finally, we propose a simple theoretical model for electrode/organic interfacial carrier injection. The results suggest why modest substituent-induced changes in the injection barrier can produce working n-type materials.
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Affiliation(s)
- Antonio Facchetti
- Department of Chemistry, Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
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Katz HE, Siegrist T, Lefenfeld M, Gopalan P, Mushrush M, Ocko B, Gang O, Jisrawl N. Mesophase Transitions, Surface Functionalization, and Growth Mechanism of Semiconducting 6PTTP6 Films from Solution. J Phys Chem B 2004. [DOI: 10.1021/jp037068w] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
Affiliation(s)
- Howard E. Katz
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Theo Siegrist
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Michael Lefenfeld
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Padma Gopalan
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Melissa Mushrush
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Ben Ocko
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Oleg Gang
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
| | - Najeh Jisrawl
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974, and Brookhaven National Laboratories, P.O. Box 5000, Upton, New York 11973-5000
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Mushrush M, Facchetti A, Lefenfeld M, Katz HE, Marks TJ. Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements. J Am Chem Soc 2003; 125:9414-23. [PMID: 12889972 DOI: 10.1021/ja035143a] [Citation(s) in RCA: 356] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5' '-bis(4-n-hexylphenyl)-2,2':5',2' '-terthiophene (dH-PT(3)P, 3), 5,5' "-bis(4-n-hexylphenyl)-2,2':5',2' ':5' ',2' "-quaterthiophene (dH-PT(4)P, 4), 1,4-bis[5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis[4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by (1)H NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/Vs) films on both Si/SiO(2) and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V(w) is applied. The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of "floating gate" configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.
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Affiliation(s)
- Melissa Mushrush
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3113, USA
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