High-power and high-efficiency operation of 1.3 µm-wavelength InP-based photonic-crystal surface-emitting lasers with metal reflector

We demonstrate high-output-power and high-efficiency operation of 1.3-µm-wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). By introducing a metal reflector and adjusting the phase of the reflected light via optimization of the thickness of the p-InP cladding layer, we successfully achieve an output power of approximately 400 mW with the slope efficiency of 0.4 W/A and the wall-plug efficiency of 20% under CW conditions. In addition, this PCSEL exhibits a narrow circular beam with a divergence angle below 1.6° even at high output powers under CW conditions at temperatures from 15°C to 50°C. We have also demonstrated an output power of over 12 W under pulsed conditions at room temperature.

200-W short-pulse operation of photonic-crystal lasers based on simultaneous absorptive and radiative Q-switching

Short-pulse high-peak-power lasers are crucial laser sources for various applications such as non-thermal ultrafine material processing and eye-safe high-resolution remote sensing. Realizing such operation in a single semiconductor laser chip without amplifiers or external resonators is expected to contribute to the development of compact, affordable laser sources for such applications. In this paper, we demonstrate short-pulse high-peak-power photonic-crystal surface-emitting lasers based on simultaneous absorptive and radiative Q-switching. The proposed device induces an instantaneous and simultaneous decrease in both absorptive and out-of-plane radiation losses due to saturable absorption and self-evolution of the photonic band, respectively, which results in drastic Q-switching operation of the device. Based on this concept, we experimentally demonstrate short-pulse generation with 200-W-class peak power and a pulse width of < 30 ps. In addition, via pulse compression with dispersion compensation, we achieve an even higher peak power of ∼300 W with a shorter pulse width of ∼10 ps.

High-brightness scalable continuous-wave single-mode photonic-crystal laser

Realizing large-scale single-mode, high-power, high-beam-quality semiconductor lasers, which rival (or even replace) bulky gas and solid-state lasers, is one of the ultimate goals of photonics and laser physics. Conventional high-power semiconductor lasers, however, inevitably suffer from poor beam quality owing to the onset of many-mode oscillation^1,2, and, moreover, the oscillation is destabilized by disruptive thermal effects under continuous-wave (CW) operation^3,4. Here, we surmount these challenges by developing large-scale photonic-crystal surface-emitting lasers with controlled Hermitian and non-Hermitian couplings inside the photonic crystal and a pre-installed spatial distribution of the lattice constant, which maintains these couplings even under CW conditions. A CW output power exceeding 50 W with purely single-mode oscillation and an exceptionally narrow beam divergence of 0.05° has been achieved for photonic-crystal surface-emitting lasers with a large resonant diameter of 3 mm, corresponding to over 10,000 wavelengths in the material. The brightness, a figure of merit encapsulating both output power and beam quality, reaches 1 GW cm^-2 sr^-1, which rivals those of existing bulky lasers. Our work is an important milestone toward the advent of single-mode 1-kW-class semiconductor lasers, which are expected to replace conventional, bulkier lasers in the near future.

High-power CW oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers

We demonstrate high-power continuous-wave (CW) lasing oscillation of 1.3-µm wavelength InP-based photonic-crystal surface-emitting lasers (PCSELs). Single-mode operation with an output power of over 100 mW, a side-mode suppression ratio (SMSR) of over 50 dB, and a narrow single-lobe beam with a divergence angle of below 1.2° are successfully achieved by using a double-lattice photonic crystal structure consisting of high-aspect-ratio deep air holes. The double lattice is designed to enhance both the in-plane optical feedback and the surface radiation effects in the photonic crystal. The coupling coefficients for 180 ^∘, +90 ^∘, and -90 ^∘ diffractions are estimated from the measurements of the photonic band structure as κ_1D = 417 cm^-1, κ_2D+ = 135 cm^-1, and κ_2D- = 65 cm^-1, respectively. The stable single-mode, high-beam-quality operation is attributed to these large coupling coefficients introduced by the asymmetric double-lattice structure.

Dually modulated photonic crystal lasers for wide-range flash illumination

Flash light sources with a wide field of view (FOV) are indispensable in various fields such as light detection and ranging (LiDAR), optical wireless communication, and adaptive lighting. However, conventional flash light sources, which combine lasers with external optical elements, tend to suffer from high complexity, large size, and high cost. In this study, we investigate a new wide-FOV flash light source which does not require external optical elements, based on a dually modulated photonic crystal surface-emitting laser (PCSEL). First, we propose and design the concept of a photonic crystal into which information of gradually varying diffraction vectors is introduced in order to artificially broaden the divergence angle. We then experimentally demonstrate photonic crystals based on this concept. Finally, by arraying 100 such lasers with mutually different central emission angles and driving all of these lasers simultaneously, we successfully achieve optics-free, 4-W flash illumination over a FOV of 30° × 30° at a wavelength of 940 nm.

General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation

Realization of one-chip, ultra-large-area, coherent semiconductor lasers has been one of the ultimate goals of laser physics and photonics for decades. Surface-emitting lasers with two-dimensional photonic crystal resonators, referred to as photonic-crystal surface-emitting lasers (PCSELs), are expected to show promise for this purpose. However, neither the general conditions nor the concrete photonic crystal structures to realize 100-W-to-1-kW-class single-mode operation in PCSELs have yet to be clarified. Here, we analytically derive the general conditions for ultra-large-area (3~10 mm) single-mode operation in PCSELs. By considering not only the Hermitian but also the non-Hermitian optical couplings inside PCSELs, we mathematically derive the complex eigenfrequencies of the four photonic bands around the Γ point as well as the radiation constant difference between the fundamental and higher-order modes in a finite-size device. We then reveal concrete photonic crystal structures which allow the control of both Hermitian and non-Hermitian coupling coefficients to achieve 100-W-to-1-kW-class single-mode lasing.

Here, the authors analytically derive the general conditions for 100-W-to-1-kW-class single-mode operation in ultra-large-area (3~10 mm) photonic crystal lasers. Such high power single-mode semiconductor lasers will bring innovation to a wide variety of fields.

Self-consistent analysis of photonic-crystal surface-emitting lasers under continuous-wave operation

We develop a self-consistent theoretical model for simulating the lasing characteristics of photonic-crystal surface-emitting lasers (PCSELs) under continuous-wave (CW) operation that takes into account thermal effects caused by current injection. Our model enables us to analyze the lasing characteristics of PCSELs under CW operation by solving self-consistently the changes in the in-plane optical gain and refractive index distribution, which is associated with heat generation and temperature rise, and the change in the oscillation modes. We reveal that the lasing band-edge selectivity and beam quality of the PCSELs are affected by the spatial distribution of the band-edge frequency of the photonic crystal formed by the refractive index distribution, which depends on the temperature distribution in the resonator. Furthermore, we show that single-mode lasing with narrow beam divergence can be realized even at high current injection under CW operation by introducing a photonic-crystal structure with an artificially formed lattice constant distribution, which compensates such band-edge frequency distribution.

Continous-wave lasing operation of 1.3-μm wavelength InP-based photonic crystal surface-emitting lasers using MOVPE regrowth

We report on electrically driven InP-based photonic-crystal surface-emitting lasers (PCSELs), which possess a deep-air-hole photonic crystal (PC) structure underneath an active region formed by metal-organic vapor-phase-epitaxial (MOVPE) regrowth. Single-mode continuous-wave (CW) lasing operation in 1.3-μm wavelength is successfully achieved at a temperature of 15°C. It is shown that the enhancement of lateral growth during the MOVPE regrowth process of air holes enables the formation of deep air holes with an atomically flat and thin overlayer, whose thickness is less than 100 nm. A threshold current of 120 mA (threshold current density = 0.68 kA/cm²) is obtained in a device with a diameter of 150 μm. A doughnut-like far-field pattern with the narrow beam divergence of less than 1° is observed. Strong optical confinement in the PC structure is revealed from measurements of the photonic band structure, and this strong optical confinement leads to the single-mode CW lasing operation with a low threshold current density.

Design of photonic-crystal surface-emitting lasers with enhanced in-plane optical feedback for high-speed operation

Photonic-crystal surface-emitting lasers (PCSELs) use the two-dimensional (2D) resonance at the band-edge of a photonic crystal for lasing, and they feature various outstanding functionalities such as high-brightness lasing, arbitrary shaping of beam patterns and on-chip 2D beam steering. In this paper, to investigate the applicability of PCSELs for high-speed operation, we design PCSELs with enhanced in-plane optical feedback, which enable single-mode lasing inside a circular region the diameter of which is less than 10 µm. To realize a strong in-plane confinement of the lasing mode, we increase the one-dimensional coupling coefficients between counter-propagating waves through the careful design of the lattice points. We also introduce an in-plane heterostructure composed of two photonic crystals with different photonic bandgaps and utilize reflection at the boundary of the two photonic crystals in addition to the optical feedback at the band-edge of each photonic crystal. By using three-dimensional finite-difference time-domain method (3D-FDTD), we confirm that the proposed hetero-PCSELs can achieve single-mode lasing operation inside a 9-µm-diameter and possibly realize a 3-dB modulation bandwidth larger than 40 GHz.

Double-lattice photonic-crystal resonators enabling high-brightness semiconductor lasers with symmetric narrow-divergence beams

Achieving high brightness (where brightness is defined as optical power per unit area per unit solid angle) in semiconductor lasers is important for various applications, including direct-laser processing and light detection and ranging for next-generation smart production and mobility. Although the brightness of semiconductor lasers has been increased by the use of edge-emitting-type resonators, their brightness is still one order of magnitude smaller than that of gas and solid-state/fibre lasers, and they often suffer from large beam divergence with strong asymmetry and astigmatism. Here, we develop a so-called 'double-lattice photonic crystal', where we superimpose two photonic lattice groups separated by one-quarter wavelength in the x and y directions. Using this resonator, an output power of 10 W with a very narrow-divergence-angle (<0.3°) symmetric surface-emitted beam is achieved from a circular emission area of 500 μm diameter under pulsed conditions, which corresponds to a brightness of over 300 MW cm^-2 sr^-1. In addition, an output power up to ~7 W is obtained under continuous-wave conditions. Detailed analyses on the double-lattice structure indicate that the resonators have the potential to realize a brightness of up to 10 GW cm^-2 sr^-1, suggesting that compact, affordable semiconductor lasers will be able to rival existing gas and fibre/disk lasers.

Near-infrared-to-visible highly selective thermal emitters based on an intrinsic semiconductor

Control of the thermal emission spectra of emitters will result in improved energy utilization efficiency in a broad range of fields, including lighting, energy harvesting, and sensing. In particular, it is challenging to realize a highly selective thermal emitter in the near-infrared-to-visible range, in which unwanted thermal emission spectral components at longer wavelengths are significantly suppressed, whereas strong emission in the near-infrared-to-visible range is retained. To achieve this, we propose an emitter based on interband transitions in a nanostructured intrinsic semiconductor. The electron thermal fluctuations are first limited to the higher-frequency side of the spectrum, above the semiconductor bandgap, and are then enhanced by the photonic resonance of the structure. Theoretical calculations indicate that optimized intrinsic Si rod-array emitters with a rod radius of 105 nm can convert 59% of the input power into emission of wavelengths shorter than 1100 nm at 1400 K. It is also theoretically indicated that emitters with a rod radius of 190 nm can convert 84% of the input power into emission of <1800-nm wavelength at 1400 K. Experimentally, we fabricated a Si rod-array emitter that exhibited a high peak emissivity of 0.77 at a wavelength of 790 nm and a very low background emissivity of <0.02 to 0.05 at 1100 to 7000 nm, under operation at 1273 K. Use of a nanostructured intrinsic semiconductor that can withstand high temperatures is promising for the development of highly efficient thermal emitters operating in the near-infrared-to-visible range.

High-Q mid-infrared thermal emitters operating with high power-utilization efficiency

We demonstrate a single-mode high-Q (Q>100) mid-infrared thermal emitter operating with high power-utilization efficiency. The emitter consists of a rod-type photonic crystal (PC) slab interacting with GaAs/AlGaAs multiple quantum wells (MQWs), a GaAs substrate frame supporting the PC slab, and electric wires for Joule heating of the device. We carefully design the structure of the PC slab and the supporting frame/wires to minimize unwanted thermal losses and realize narrowband thermal emission having a peak intensity, under a given electrical input power, that is an order of magnitude higher than that of a reference blackbody emitter due to the efficient increase of the device temperature.

Improved efficiency of ultra-thin µc-Si solar cells with photonic-crystal structures

We investigate the improvement of the conversion efficiency of ultra-thin (~500nm-thick) microcrystalline silicon (μc-Si) solar cells incorporating photonic-crystal structures, where light absorption is strongly enhanced by the multiple resonant modes in the photonic crystal. We focus on the quality of the intrinsic μc-Si layer deposited on the substrate, which is structured to form a photonic crystal at its upper surface with a period of several hundred nanometers. We first study the crystalline quality from the viewpoint of the crystalline fraction and show that the efficiency can be improved when the deposition conditions for the μc-Si layer are tuned to give an almost constant crystalline fraction of ~50% across the entire film. We then study the influence of the photonic-crystal structure on the crystalline quality. From transmission-electron microscope images, we show that the collision of μc-Si grains growing at different angles occurs when a photonic-crystal structure with an angular surface is used; this can be suppressed by introducing a rounded surface structure. As a result, we demonstrate an efficiency of 8.7% in a ~500-nm thick, homo-junction μc-Si solar cell, which has only ~1/4 the thickness of typical μc-Si solar cells. We also discuss the possibility of further improving the efficiency by performing calculations that focus on the absorption characteristics of the fabricated cell structure.

Structural design of photonic crystal thin film silicon solar cells by sensitivity analysis: Inclusion of electrode absorption

We carry out the structural design of photonic crystals (PCs) using sensitivity analysis for enhancing optical absorption of thin film microcrystalline silicon (μc-Si) solar cells. In this paper, we employ a model which includes absorption of not only the thin film μc-Si, but also the transparent conductive oxide and metal back reflector for design accuracy. We carry out structural design for this model using sensitivity analysis which maximizes optical absorption in μc-Si layer. As a result, we succeed in obtaining the maximum short circuit current density of 25.2 mA/cm2 for thin film (600-nm thick) μc-Si solar cells (1.4-fold increase compared to the case without a PC).

Realization of dynamic thermal emission control

Thermal emission in the infrared range is important in various fields of research, including chemistry, medicine and atmospheric science. Recently, the possibility of controlling thermal emission based on wavelength-scale optical structures has been intensively investigated with a view towards a new generation of thermal emission devices. However, all demonstrations so far have involved the 'static' control of thermal emission; high-speed modulation of thermal emission has proved difficult to achieve because the intensity of thermal emission from an object is usually determined by its temperature, and the frequency of temperature modulation is limited to 10-100 Hz even when the thermal mass of the object is small. Here, we experimentally demonstrate the dynamic control of thermal emission via the control of emissivity (absorptivity), at a speed four orders of magnitude faster than is possible using the conventional temperature-modulation method. Our approach is based on the dynamic control of intersubband absorption in n-type quantum wells, which is enhanced by an optical resonant mode in a photonic crystal slab. The extraction of electrical carriers from the quantum wells leads to an immediate change in emissivity from 0.74 to 0.24 at the resonant wavelength while maintaining much lower emissivity at all other wavelengths.