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Reshchikov MA, Vorobiov M, Andrieiev O, Ding K, Izyumskaya N, Avrutin V, Usikov A, Helava H, Makarov Y. Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry. Sci Rep 2020; 10:2223. [PMID: 32041980 PMCID: PMC7010669 DOI: 10.1038/s41598-020-59033-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Accepted: 01/23/2020] [Indexed: 11/09/2022] Open
Abstract
Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that apparently high concentrations of C and O at depths up to 1 µm in SIMS profiles do not represent depth distributions of these species in the GaN matrix but are rather caused by post-growth surface contamination and knocking-in impurity species from the surface. In particular, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the concentration of carbon in nitrogen sites is below 2-5 × 1015 cm-3 at any depth of GaN samples grown by HVPE. We demonstrate that PL is a very sensitive and reliable tool to determine the concentrations of impurities in the GaN matrix.
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Affiliation(s)
- M A Reshchikov
- Department of Physics, Virginia Commonwealth University, Richmond, VA, 23220, USA.
| | - M Vorobiov
- Department of Physics, Virginia Commonwealth University, Richmond, VA, 23220, USA
| | - O Andrieiev
- Department of Physics, Virginia Commonwealth University, Richmond, VA, 23220, USA
| | - K Ding
- Department of Electrical Engineering and Computer Science, Virginia Commonwealth University, Richmond, VA, 23220, USA
| | - N Izyumskaya
- Department of Electrical Engineering and Computer Science, Virginia Commonwealth University, Richmond, VA, 23220, USA
| | - V Avrutin
- Department of Electrical Engineering and Computer Science, Virginia Commonwealth University, Richmond, VA, 23220, USA
| | - A Usikov
- Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, 49 Kronverkskiy Ave., 197101, Saint Petersburg, Russia
| | - H Helava
- Nitride Crystals, Inc. 9702 Gayton Road, Ste. 320, Richmond, VA, 23238, USA
| | - Yu Makarov
- Nitride Crystals, Inc. 9702 Gayton Road, Ste. 320, Richmond, VA, 23238, USA
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Avrutin V, Reshchikov MA, Izyumskaya N, Shimada R, Novak SW, Morkoç H. Effect of thermal annealing on Cu-related green luminescence in ZnO. ACTA ACUST UNITED AC 2009. [DOI: 10.1117/12.809477] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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